Characterization of sub-10 nm filter cleanliness by electrophoretic purification and analysis

Makonnen Payne, R. Varanasi, Glen W. Wildermuth, Arthur J. Ackermann
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Abstract

The cleanliness and particle removal requirements on filtration for the semiconductor industry continue to increase in order to keep pace with the development of sub-10nm devices. However, there has been a lack of available instrumentation to directly measure the particles and low levels of "killer" defects that are detrimental to final device function. To address this issue, an electrophoretic particle capture device has been used in order to test its ability to capture and characterize sub-10 nm particles. Using an electrode, a variable electric field is applied to a process stream that results in the capture and subsequent release of particles. The release of particle creates a measurable current that can be correlated to the amount of contamination in a system. In this case we apply the technique to the evaluation of a cleaning method for next generation filtration products developed specifically for the microelectronics industry. We are able to demonstrate that the cleaning method used has a significant impact on the cleanliness of the filter and that the new technique has the ability to effectively characterize its state of cleanliness.
通过电泳纯化和分析表征10 nm以下过滤器清洁度
为了跟上亚10nm器件的发展步伐,半导体行业对过滤器的清洁度和颗粒去除要求不断提高。然而,缺乏可用的仪器来直接测量颗粒和低水平的“杀手”缺陷,这些缺陷对最终设备的功能有害。为了解决这个问题,电泳颗粒捕获装置已经被用来测试其捕获和表征低于10纳米颗粒的能力。使用电极,一个可变电场被施加到一个过程流,导致捕获和随后的释放颗粒。粒子的释放产生了可测量的电流,可以与系统中的污染量相关联。在这种情况下,我们将该技术应用于评估专门为微电子工业开发的下一代过滤产品的清洁方法。我们能够证明所使用的清洁方法对过滤器的清洁度有重大影响,并且新技术具有有效表征其清洁度状态的能力。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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