2016 International Conference on Electronics Packaging (ICEP)最新文献_第4页

Enabling Cu wire in 3D stack package 在3D堆叠封装中启用铜线

2016 International Conference on Electronics Packaging (ICEP) Pub Date : 2016-04-20 DOI: 10.1109/ICEP.2016.7486880

Ruby Ann M. Camenforte, Ray Fredric de Asis, M. Chowdhury

{"title":"Enabling Cu wire in 3D stack package","authors":"Ruby Ann M. Camenforte, Ray Fredric de Asis, M. Chowdhury","doi":"10.1109/ICEP.2016.7486880","DOIUrl":"https://doi.org/10.1109/ICEP.2016.7486880","url":null,"abstract":"Over the past two decades, the semiconductor industry has seen a rapid increase in trend for miniaturization of electronic devices. The demand for small and compact size devices has been in every application, be it smartphones, tablets, automotive, industrial, or healthcare equipment. Since 2011, Texas Instruments (TI) has shipped more than 30 million units of its PowerStack packaging technology, a combination of chip stacking and clip bonding that is designed to improve performance and chip densities in power management devices. In PowerStack, TI's NexFET power MOSFETs are stacked on a grounded lead frame. The packaging technology enables heightened integration in a quad flat-pack no-lead (QFN) form factor, cutting down on package area by as much as 50% (compared to side-by-side MOSFETs). However, integration poses multiple packaging manufacturability and reliability challenges, more so for wire bonded devices where complex die to die bonds must be implemented, thus limiting most packaging assembly suppliers to stay with gold (Au) wire. This paper discusses the technical concerns of Cu wire bonding on a three die MCM QFN and the innovative approach to overcome the bonding challenges.","PeriodicalId":343912,"journal":{"name":"2016 International Conference on Electronics Packaging (ICEP)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-04-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122666994","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

The corrosion behavior of Ag alloy wire bond on Al pad in molding compounds of various chlorine contents under biased-HAST 研究了不同氯含量模塑化合物中银合金焊丝在铝衬垫上的腐蚀行为

2016 International Conference on Electronics Packaging (ICEP) Pub Date : 2016-04-20 DOI: 10.1109/ICEP.2016.7486877

Y. Chiu, Tzu-Hsing Chiang, Ping-Feng Yang, Louie Huang, C. Hung, S. Uegaki, Kwang-Lung Lin

{"title":"The corrosion behavior of Ag alloy wire bond on Al pad in molding compounds of various chlorine contents under biased-HAST","authors":"Y. Chiu, Tzu-Hsing Chiang, Ping-Feng Yang, Louie Huang, C. Hung, S. Uegaki, Kwang-Lung Lin","doi":"10.1109/ICEP.2016.7486877","DOIUrl":"https://doi.org/10.1109/ICEP.2016.7486877","url":null,"abstract":"The present article investigated the performance and corrosion behavior between Ag alloy wire bond and Al pad under molding compounds of different chlorine contents. The epoxy molding compounds (EMCs) were categorized as ultra-high chlorine, high chlorine and low chlorine, respectively, with 18.3 and 4.1 ppm chlorine contents. The ball bonds were stressed under 130°C/85%RH with biased voltage of 10V. The interfacial evolution between Ag alloy wire bond and Al pad was investigated in EMC of three chlorine contents after the biased-HAST test. The Ag bonding wires used in the plastic ball grid array (PBGA) package include low Ag wire (89wt%) and high Ag alloy wire (97wt%). The as bonded wire bond exhibits an average Ag-Al IMC thickness of ~0.56 μm in both types of Ag alloy wire. Two Cu-Al IMC layers, AgAl2 and Ag4Al, analyzed by EDX were formed after 96h of biased-HAST test. The joint failed in 96h and 480h, respectively, under high chlorine content EMC. The joint lasts longer than 1056h with low chlorine content EMC. The corrosion of IMC formed between Ag alloy wire and Al pad, occurs in the high Ag content alloy wire. The results of EDX analysis indicate that the chlorine ion diffuses from molding compound to IMC through the crack formed between IMC and Al pad. Al2O3 was formed within the IMC layer. It is believed the existence of Al2O3 accelerates the penetration of the chlorine ion and thus the corrosion.","PeriodicalId":343912,"journal":{"name":"2016 International Conference on Electronics Packaging (ICEP)","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-04-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122671247","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 9

Immersion cooling of electronics utilizing lotus-type porous copper 利用莲花型多孔铜的电子浸入式冷却

2016 International Conference on Electronics Packaging (ICEP) Pub Date : 2016-04-20 DOI: 10.1109/ICEP.2016.7486805

K. Yuki, T. Hara, Soichiro Ikezawa, Ken-taro Anju, Koichi Suzuki, T. Ogushi, T. Ide, M. Murakami

{"title":"Immersion cooling of electronics utilizing lotus-type porous copper","authors":"K. Yuki, T. Hara, Soichiro Ikezawa, Ken-taro Anju, Koichi Suzuki, T. Ogushi, T. Ide, M. Murakami","doi":"10.1109/ICEP.2016.7486805","DOIUrl":"https://doi.org/10.1109/ICEP.2016.7486805","url":null,"abstract":"This paper evaluates boiling heat transfer performance on a lotus-type of porous copper attached on a heated surface. The experiments are performed under atmospheric and saturated pool conditions. The lotus porous medium has uni-directional pore structure and the average size of the pore hole is 0.4 mm. The porous plate of 1.0 mm or 2.0 mm in thickness is mechanically attached onto the heated surface in order to obtain the referential data of this porous media. The boiling curves suggest that utilization of the lotus porous medium definitely leads to boiling heat transfer enhancement. For instance, at the wall superheat of 10 - 20 K, the boiling heat transfer coefficient is 2 - 3 times higher than that of the bare surface. In the low wall superheat regime, the heat transfer coefficient also increases with increasing wall superheat. On the other hand, the results also verify that the thickness of the lotus porous doesn't affect the boiling heat transfer coefficient at all, which suggests that there is a big contact thermal resistance between the heated surface and the lotus plate. In that sense, it is predicted that the boiling phenomena is conceivably dominant mainly at the bottom of the lotus porous. In addition, it is confirmed that the critical heat flux is almost the same as that in the bare surface case, which also indicates us that it needs to enhance the liquid supply toward the inside the lotus porous.","PeriodicalId":343912,"journal":{"name":"2016 International Conference on Electronics Packaging (ICEP)","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-04-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125197965","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 7

Electrical analysis of low distortion transmission design and stacking TSVs on silicon interposer 低失真传输设计及在硅中间层上堆叠tsv的电学分析

2016 International Conference on Electronics Packaging (ICEP) Pub Date : 2016-04-20 DOI: 10.1109/ICEP.2016.7486892

C. Kuo, H. Kuo, Chen-Chao Wang

引用次数: 0

Ultra thin low ESL and ultra wide broadband silicon capacitors 超薄低ESL和超宽宽带硅电容器

2016 International Conference on Electronics Packaging (ICEP) Pub Date : 2016-04-20 DOI: 10.1109/ICEP.2016.7486775

C. Bunel, F. Murray

{"title":"Ultra thin low ESL and ultra wide broadband silicon capacitors","authors":"C. Bunel, F. Murray","doi":"10.1109/ICEP.2016.7486775","DOIUrl":"https://doi.org/10.1109/ICEP.2016.7486775","url":null,"abstract":"The very high capacitance platform of the 3D Silicon capacitors technology presents lots of interest in different domains. In this paper we'll focus on the Optical Networking, communications and high speed processors. The intrinsic silicon capacitors group delay, a key parameter in the phase sensitive broadband applications, will be compared with the multilayer ceramic capacitor (MLCC) one. All the components involved in the main signal line have indeed to manage properly their phase behavior to minimize their group delay impact on final performances. First, the intrinsic construction and the simplified equivalent electrical models will be compared. Secondly it will be demonstrated how the Silicon Capacitors are better candidates for performances, miniaturization and integration thanks to their low profile whereas the high thickness is a limiting factor for Ceramic capacitors. On top of the competitive overview of performances specific to the Ultra Wide Broadband Capacitors, signal integrity, frequency response, linearity, dielectric absorption, the silicon capacitor technology benefits will be detailed. Design recommendations will be given to those who want to optimize performances in the overall broadband optical system. The perspectives and roadmap for the future will be disclosed.","PeriodicalId":343912,"journal":{"name":"2016 International Conference on Electronics Packaging (ICEP)","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-04-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128664400","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 6

Development of electromagnetic induction type MEMS air turbine generator with ball bearing 球轴承电磁感应式MEMS空气汽轮发电机的研制

2016 International Conference on Electronics Packaging (ICEP) Pub Date : 2016-04-20 DOI: 10.1109/ICEP.2016.7486862

K. Mishima, Y. Yokozeki, Y. Han, M. Takato, K. Saito, F. Uchikoba

{"title":"Development of electromagnetic induction type MEMS air turbine generator with ball bearing","authors":"K. Mishima, Y. Yokozeki, Y. Han, M. Takato, K. Saito, F. Uchikoba","doi":"10.1109/ICEP.2016.7486862","DOIUrl":"https://doi.org/10.1109/ICEP.2016.7486862","url":null,"abstract":"This paper suggests the MEMS air turbine that used for the MEMS electromagnetic induction type generator. In the MEMS air turbine that employed the fluid dynamic bearing system, the gap between the magnet and the magnetic circuit and the eccentric motion of the rotor are problem in the high efficiency and the high output power. The developed MEMS air turbine has miniature silicon structure and the miniature bearing structure. The bearing structure is extended to suppress the eccentric motion and to close the gap between the magnet and the magnetic circuit. The dimension error of the fabricated MEMS air turbine components is less than ± 6 micro meter. Therefore, the microstructure with high-accuracy and high-aspect-ratio can be fabricated by the MEMS process. By forming the guide structure, the assembly error is less than ± 5 micro meter. The combined MEMS air turbine with the ball bearing is achieved, and the dimensions are 4.36 mm, 4.25 mm, and 3.60mm, respectively. Moreover, it is possible to close the distance of the gap by introducing the bearing structure. In the rotational experiment, the rotational motion of the rotor is achieved when the magnetic force applying from the outside of the fabricated turbine. Accordingly, it is possible to realize the rotational structure that is combined with the MEMS silicon components and the ball bearing. In the future work, in order to achieve the rotational motion by the air pressure, the rotational structure will be optimization about the reducing weight of the rotor and the air passage.","PeriodicalId":343912,"journal":{"name":"2016 International Conference on Electronics Packaging (ICEP)","volume":"111 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-04-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126676397","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Nanocarbon interconnects: Current status and prospects 纳米碳互连:现状与展望

2016 International Conference on Electronics Packaging (ICEP) Pub Date : 2016-04-20 DOI: 10.1109/ICEP.2016.7486784

Shintaro Sato

{"title":"Nanocarbon interconnects: Current status and prospects","authors":"Shintaro Sato","doi":"10.1109/ICEP.2016.7486784","DOIUrl":"https://doi.org/10.1109/ICEP.2016.7486784","url":null,"abstract":"Nanocarbon materials represented by graphene and carbon nanotubes (CNTs) are promising candidates for future LSI interconnects. We recently fabricated sub-10-nm-wide graphene interconnects whose resistivity was lower than that of Cu with the same dimensions [1]. In this presentation, we first describe the fabrication and evaluation of such graphene interconnects. Multilayer graphene (MLG) was synthesized by chemical vapor deposition. Intercalation of FeCl3 into MLG was then performed to lower the resistance of MLG. In fact, the resistances of MLG interconnects decreased by about one-twentieth after intercalation [2]. The resultant resistivity of MLG was as low as that of bulk Cu. We further describe the fabrication and evaluation of 8-nm-wide MLG interconnects. In the second part, we explain a newly-developed fabrication process for carbon nanotube (CNT) vias and plugs, which relies on implantation of CNTs into sub-micrometer-sized holes [3]. In fact, we succeeded in implanting bundles of CNTs into holes with dimeters as small as 130 nm. The electrical properties of CNT plugs thus fabricated were then evaluated, exhibiting resistances lower than those of the CNT plugs reported previously.","PeriodicalId":343912,"journal":{"name":"2016 International Conference on Electronics Packaging (ICEP)","volume":"65 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-04-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126756482","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

A novel approach for forming ductile Cu-to-Cu interconnection 一种形成延展性cu - cu互连的新方法

2016 International Conference on Electronics Packaging (ICEP) Pub Date : 2016-04-20 DOI: 10.1109/ICEP.2016.7486873

Che-yu Yeh, Yi-Kai Kuo, S. Lin

引用次数: 0

Thermo-mechanical reliability of high-temperature power modules with metal-ceramic substrates and sintered silver joints 采用金属陶瓷基片和烧结银接头的高温功率模块的热机械可靠性

2016 International Conference on Electronics Packaging (ICEP) Pub Date : 2016-04-20 DOI: 10.1109/ICEP.2016.7486855

Shan Gao, Seiya Yuki, Hideyo Osanai, Weizhen Sun, K. Ngo, G. Lu

{"title":"Thermo-mechanical reliability of high-temperature power modules with metal-ceramic substrates and sintered silver joints","authors":"Shan Gao, Seiya Yuki, Hideyo Osanai, Weizhen Sun, K. Ngo, G. Lu","doi":"10.1109/ICEP.2016.7486855","DOIUrl":"https://doi.org/10.1109/ICEP.2016.7486855","url":null,"abstract":"Demands for higher power density and reliability on power electronics systems are driving the need for development of high-temperature packaging solutions. Existing power module packaging technologies that rely on lead-tin or lead-free die-attach solders and alumina direct-bond-copper (DBC) insulated substrates are limited to 125°C junction temperature for reliable module operation. This is because of low-melting temperatures of the solders and low alumina toughness, respectively. Recently, die-attach by silver sintering or the low-temperature joining technique (LTJT), has been shown to significantly improve chip-bonding reliability at higher junction temperatures. Concurrently, direct-bond-aluminum (DBA) substrates with aluminum nitride (AlN) ceramic and DBC substrates using high-toughness silicon nitride (Si3N4) ceramic are shown to be significantly more reliable than alumina DBC substrates, especially over large temperature swings. In this paper, thermal impedance of the power device was measured to characterize the failure of the sample. The robustness of the combination of sintered silver and Si3N4-DBC or AlN-DBA substrates was confirmed.","PeriodicalId":343912,"journal":{"name":"2016 International Conference on Electronics Packaging (ICEP)","volume":"43 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-04-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127580706","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 2

Study on the mitigation solder of the external stress type whisker 外应力型晶须缓释焊料的研究

2016 International Conference on Electronics Packaging (ICEP) Pub Date : 2016-04-20 DOI: 10.1109/ICEP.2016.7486841

H. Iwamoto, Osamu Munekata, Kaichi Tsuruta

引用次数: 0