低失真传输设计及在硅中间层上堆叠tsv的电学分析

C. Kuo, H. Kuo, Chen-Chao Wang
{"title":"低失真传输设计及在硅中间层上堆叠tsv的电学分析","authors":"C. Kuo, H. Kuo, Chen-Chao Wang","doi":"10.1109/ICEP.2016.7486892","DOIUrl":null,"url":null,"abstract":"In this paper, the performance of GSG co-planar waveguide (CPW) type transmission line on silicon interposer and stacking memories by through-silicon-vias (TSVs) are analyzed. The high conductor loss of fine lines will cause the impedance varying with frequency and make the reflection loss minor. Furthermore the flat attenuation of such fine line will result in low distortion waveforms and have better jitter performance compared to conventional wire-bonded memory stacking and PCB routing design. Both frequency and time domain are discussed and analyzed.","PeriodicalId":343912,"journal":{"name":"2016 International Conference on Electronics Packaging (ICEP)","volume":"19 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-04-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Electrical analysis of low distortion transmission design and stacking TSVs on silicon interposer\",\"authors\":\"C. Kuo, H. Kuo, Chen-Chao Wang\",\"doi\":\"10.1109/ICEP.2016.7486892\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, the performance of GSG co-planar waveguide (CPW) type transmission line on silicon interposer and stacking memories by through-silicon-vias (TSVs) are analyzed. The high conductor loss of fine lines will cause the impedance varying with frequency and make the reflection loss minor. Furthermore the flat attenuation of such fine line will result in low distortion waveforms and have better jitter performance compared to conventional wire-bonded memory stacking and PCB routing design. Both frequency and time domain are discussed and analyzed.\",\"PeriodicalId\":343912,\"journal\":{\"name\":\"2016 International Conference on Electronics Packaging (ICEP)\",\"volume\":\"19 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-04-20\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 International Conference on Electronics Packaging (ICEP)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICEP.2016.7486892\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 International Conference on Electronics Packaging (ICEP)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICEP.2016.7486892","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

摘要

本文分析了GSG共面波导(CPW)型传输线在硅中间层和通过硅通孔(tsv)堆叠存储器上的性能。细线的高导体损耗会引起阻抗随频率变化,使反射损耗较小。此外,与传统的线键存储堆叠和PCB布线设计相比,这种细线的平坦衰减将产生低失真的波形,并具有更好的抖动性能。对频域和时域进行了讨论和分析。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Electrical analysis of low distortion transmission design and stacking TSVs on silicon interposer
In this paper, the performance of GSG co-planar waveguide (CPW) type transmission line on silicon interposer and stacking memories by through-silicon-vias (TSVs) are analyzed. The high conductor loss of fine lines will cause the impedance varying with frequency and make the reflection loss minor. Furthermore the flat attenuation of such fine line will result in low distortion waveforms and have better jitter performance compared to conventional wire-bonded memory stacking and PCB routing design. Both frequency and time domain are discussed and analyzed.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术官方微信