Ultra thin low ESL and ultra wide broadband silicon capacitors

C. Bunel, F. Murray
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引用次数: 6

Abstract

The very high capacitance platform of the 3D Silicon capacitors technology presents lots of interest in different domains. In this paper we'll focus on the Optical Networking, communications and high speed processors. The intrinsic silicon capacitors group delay, a key parameter in the phase sensitive broadband applications, will be compared with the multilayer ceramic capacitor (MLCC) one. All the components involved in the main signal line have indeed to manage properly their phase behavior to minimize their group delay impact on final performances. First, the intrinsic construction and the simplified equivalent electrical models will be compared. Secondly it will be demonstrated how the Silicon Capacitors are better candidates for performances, miniaturization and integration thanks to their low profile whereas the high thickness is a limiting factor for Ceramic capacitors. On top of the competitive overview of performances specific to the Ultra Wide Broadband Capacitors, signal integrity, frequency response, linearity, dielectric absorption, the silicon capacitor technology benefits will be detailed. Design recommendations will be given to those who want to optimize performances in the overall broadband optical system. The perspectives and roadmap for the future will be disclosed.
超薄低ESL和超宽宽带硅电容器
三维硅电容器技术的高电容平台在不同领域引起了人们的广泛关注。在本文中,我们将重点讨论光网络、通信和高速处理器。本征硅电容器群延迟是相敏宽带应用中的一个关键参数,本文将其与多层陶瓷电容器(MLCC)进行比较。主信号线中涉及的所有元件都必须妥善管理其相位行为,以尽量减少其群延迟对最终性能的影响。首先,将本征结构与简化等效电学模型进行比较。其次,它将展示硅电容器是如何更好的候选性能,小型化和集成化,这要归功于它们的低轮廓,而高厚度是陶瓷电容器的限制因素。除了对超宽带电容器的性能、信号完整性、频率响应、线性度、介电吸收的竞争性概述之外,还将详细介绍硅电容器技术的优势。对于想要优化整个宽带光学系统性能的人,将给出设计建议。未来的展望和路线图将被公开。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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