2019 IEEE 32nd International Conference on Microelectronic Test Structures (ICMTS)最新文献

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Taming Emerging Devices' Variation and Reliability Challenges with Architectural and System Solutions [Invited] 利用架构和系统解决方案应对新兴设备的变化和可靠性挑战[特邀]
2019 IEEE 32nd International Conference on Microelectronic Test Structures (ICMTS) Pub Date : 2019-03-01 DOI: 10.1109/ICMTS.2019.8730924
Yuyang Wang, Leilai Shao, M. Lastras-Montaño, K. Cheng
{"title":"Taming Emerging Devices' Variation and Reliability Challenges with Architectural and System Solutions [Invited]","authors":"Yuyang Wang, Leilai Shao, M. Lastras-Montaño, K. Cheng","doi":"10.1109/ICMTS.2019.8730924","DOIUrl":"https://doi.org/10.1109/ICMTS.2019.8730924","url":null,"abstract":"Emerging devices are promising alternatives to traditional CMOS technologies as proposed in various solutions for future computation and communication systems. However, such devices often suffer from significant variations and relatively poor reliability. To address such limitations for their broader adoption, novel techniques at circuit, architecture, and system levels could help alleviate the device variation and reliability challenges. In this paper, we illustrate the effectiveness of such techniques in three distinct application domains, namely nonvolatile memories, flexible electronics, and silicon photonics-enabled optical interconnects.","PeriodicalId":333915,"journal":{"name":"2019 IEEE 32nd International Conference on Microelectronic Test Structures (ICMTS)","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122957299","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Vertical Bipolar Transistor Test Structure for Measuring Minority Carrier Lifetime in IGBTs 测量igbt中少数载流子寿命的垂直双极晶体管测试结构
2019 IEEE 32nd International Conference on Microelectronic Test Structures (ICMTS) Pub Date : 2019-03-01 DOI: 10.1109/ICMTS.2019.8730922
K. Takeuchi, M. Fukui, T. Saraya, K. Itou, T. Takakura, S. Suzuki, Y. Numasawa, K. Kakushima, T. Hoshii, K. Furukawa, M. Watanabe, N. Shigyo, H. Wakabayashi, M. Tsukuda, A. Ogura, K. Tsutsui, H. Iwai, S. Nishizawa, I. Omura, H. Ohashi, T. Hiramoto
{"title":"Vertical Bipolar Transistor Test Structure for Measuring Minority Carrier Lifetime in IGBTs","authors":"K. Takeuchi, M. Fukui, T. Saraya, K. Itou, T. Takakura, S. Suzuki, Y. Numasawa, K. Kakushima, T. Hoshii, K. Furukawa, M. Watanabe, N. Shigyo, H. Wakabayashi, M. Tsukuda, A. Ogura, K. Tsutsui, H. Iwai, S. Nishizawa, I. Omura, H. Ohashi, T. Hiramoto","doi":"10.1109/ICMTS.2019.8730922","DOIUrl":"https://doi.org/10.1109/ICMTS.2019.8730922","url":null,"abstract":"Vertical PNP bipolar transistor test structures were fabricated, which can be integrated on the same wafer with functional IGBTs. Common-base current gain was measured by applying zero voltage to the leaky back side junction, from which minority carrier lifetime in the base region was extracted. The structure makes it possible to measure the lifetime after a real IGBT fabrication process flow, and to correlate it with the characteristics of IGBTs on the same wafer.","PeriodicalId":333915,"journal":{"name":"2019 IEEE 32nd International Conference on Microelectronic Test Structures (ICMTS)","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128780003","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Session 8: Noise 第八部分:噪音
2019 IEEE 32nd International Conference on Microelectronic Test Structures (ICMTS) Pub Date : 2019-03-01 DOI: 10.1109/icmts.2019.8730963
{"title":"Session 8: Noise","authors":"","doi":"10.1109/icmts.2019.8730963","DOIUrl":"https://doi.org/10.1109/icmts.2019.8730963","url":null,"abstract":"","PeriodicalId":333915,"journal":{"name":"2019 IEEE 32nd International Conference on Microelectronic Test Structures (ICMTS)","volume":"386 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116642909","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Session 6: Matching & Variability 第6部分:匹配和可变性
2019 IEEE 32nd International Conference on Microelectronic Test Structures (ICMTS) Pub Date : 2019-03-01 DOI: 10.1109/icmts.2019.8730982
{"title":"Session 6: Matching & Variability","authors":"","doi":"10.1109/icmts.2019.8730982","DOIUrl":"https://doi.org/10.1109/icmts.2019.8730982","url":null,"abstract":"","PeriodicalId":333915,"journal":{"name":"2019 IEEE 32nd International Conference on Microelectronic Test Structures (ICMTS)","volume":"26 1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131018899","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Session 9: Packaging 第九部分:包装
2019 IEEE 32nd International Conference on Microelectronic Test Structures (ICMTS) Pub Date : 2019-03-01 DOI: 10.1109/icmts.2019.8730961
{"title":"Session 9: Packaging","authors":"","doi":"10.1109/icmts.2019.8730961","DOIUrl":"https://doi.org/10.1109/icmts.2019.8730961","url":null,"abstract":"","PeriodicalId":333915,"journal":{"name":"2019 IEEE 32nd International Conference on Microelectronic Test Structures (ICMTS)","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132072345","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A Study of Test Throughput Analysis on Capacitance Measurement of Parallel Test Structures Using LCR and Direct Charge based Instruments 基于LCR和直接充电的并联测试结构电容测量的测试吞吐量分析研究
2019 IEEE 32nd International Conference on Microelectronic Test Structures (ICMTS) Pub Date : 2019-03-01 DOI: 10.1109/ICMTS.2019.8730979
V. Katragadda, Namita N Deshmukh, A. Gasasira, Cheng-Mao Lee, Alan Cusick
{"title":"A Study of Test Throughput Analysis on Capacitance Measurement of Parallel Test Structures Using LCR and Direct Charge based Instruments","authors":"V. Katragadda, Namita N Deshmukh, A. Gasasira, Cheng-Mao Lee, Alan Cusick","doi":"10.1109/ICMTS.2019.8730979","DOIUrl":"https://doi.org/10.1109/ICMTS.2019.8730979","url":null,"abstract":"Advancement in technology scaling has enabled further integration of additional structures per area. While the direct benefits of improved performance in smaller packaging is achieved, the test content per structure has increased for quicker and better yield learning, ultimately driving up test time and cost. Parallel testing where multiple devices can be measured synchronously or asynchronously has shown results in addressing such high test demand [1] [2]. In this paper, we discuss capacitance measurement using traditional LCR meter and direct charge measurement (DCM) hardware [3] on advanced technology nodes. The LCR meter is a shared resource, whereas DCM is a per-pin based architecture of capacitance measurement, enabled for higher throughput. Recent studies [3] [4] [7] comparing DCM based hardware to LCR meters can fall short when devices show higher leakage especially during the initial phase of technology development. We present how an improved DCM hardware [6] helps in better overall correlation to LCR while maintaining throughput. Also, the structures designed for parallel test (DFPT), contribute to higher throughput when tested using DCM.","PeriodicalId":333915,"journal":{"name":"2019 IEEE 32nd International Conference on Microelectronic Test Structures (ICMTS)","volume":"306 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134447022","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Damage Assessment Structure of Test-Pad Post-Processing on CMOS LSIs CMOS lsi测试台后处理损伤评估结构
2019 IEEE 32nd International Conference on Microelectronic Test Structures (ICMTS) Pub Date : 2019-03-01 DOI: 10.1109/ICMTS.2019.8730991
Y. Okamoto, Ayako Mizushima, Naoto Usami, Jun Kinoshita, A. Higo, Y. Mita
{"title":"Damage Assessment Structure of Test-Pad Post-Processing on CMOS LSIs","authors":"Y. Okamoto, Ayako Mizushima, Naoto Usami, Jun Kinoshita, A. Higo, Y. Mita","doi":"10.1109/ICMTS.2019.8730991","DOIUrl":"https://doi.org/10.1109/ICMTS.2019.8730991","url":null,"abstract":"We assessed potential degradation of MOSFET characteristics induced by post-processing of extra bond pads. The pads are used as stable electrical connections in repairing and test. The test structure consists of $pmb{16times 16}$ arrayed PMOSFETs designed with 0.6 $pmb{mu}mathbf{m}$ CMOS technology. An aluminum pad is deposited on the arrayed structure using a silicon shadow mask, and wire bonding is performed subsequently. The characteristics of $I_{mathrm{d}}-V_{mathrm{g}}$ were compared before and after the post-process. The result indicates that the post-processing does not affect the characteristics of MOSFETs, and therefore it can be used to place post-processed bond pads over an LSI chip.","PeriodicalId":333915,"journal":{"name":"2019 IEEE 32nd International Conference on Microelectronic Test Structures (ICMTS)","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134470999","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Chairman's Letter 主席的信
2019 IEEE 32nd International Conference on Microelectronic Test Structures (ICMTS) Pub Date : 2019-03-01 DOI: 10.1109/icmts.2019.8730994
David Bercovici
{"title":"Chairman's Letter","authors":"David Bercovici","doi":"10.1109/icmts.2019.8730994","DOIUrl":"https://doi.org/10.1109/icmts.2019.8730994","url":null,"abstract":"Greetings, friends of Yale Geology & Geophysics, this is my second year as Chair of our fine department, and it gives me great pleasure to tell you about the many events of the last year. There have been numerous changes, including new faculty, new graduates, expansion in numbers of undergraduate majors, graduate students, and postdoctoral scholars; even the building has seen renovations. Early in 2007 we ran two simultaneous junior searches, one in mineral physics and geophysics, the other in isotope geochemistry. The searches led to the appointment of four new faculty, two in each of the disciplines. The new assistant professors are geochemists Hagit Affek and Zhengrong Wang, both of whom started in July 2007, and geophysicists Kanani Lee (who starts in July 2008) and Maureen Long (who starts in January 2009). Each brings unique talents to the Department, and they will oversee major expansions in isotope geochemistry, mineral physics and seismological research. You can find profiles and a photo of each of them later in this newsletter. As we add new young faculty, our formerly young faculty are getting older and this year saw the promotions of geophysicist Jun Korenaga to Associate Professor, and atmospheric physicist Steven Sherwood to Professor. You might recall that Jun Korenaga was the recipient of the James B. Macelwane Medal from the American Geophysical Union in 2006, and Steve Sherwood received the Clarence Leroy Meisinger award from the American Meteorological Society in 2005. Bob Gordon retired in July of this year but continues as a Senior Research Scientist. Bob was an undergraduate ’52 and PhD ’55 in engineering; he returned to Yale after a stint at Columbia and has been a professor since 1957. In early November, the Department held a two-day symposium in Bob’s honor to highlight the singular contributions he has made in the fields of rock mechanics (including some of the early work that paved the GEOLOGY & GEOPHYSICS NEWS","PeriodicalId":333915,"journal":{"name":"2019 IEEE 32nd International Conference on Microelectronic Test Structures (ICMTS)","volume":"48 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127011542","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Conference Officials 会议官员
2019 IEEE 32nd International Conference on Microelectronic Test Structures (ICMTS) Pub Date : 2019-03-01 DOI: 10.1109/icmts.2019.8730959
{"title":"Conference Officials","authors":"","doi":"10.1109/icmts.2019.8730959","DOIUrl":"https://doi.org/10.1109/icmts.2019.8730959","url":null,"abstract":"","PeriodicalId":333915,"journal":{"name":"2019 IEEE 32nd International Conference on Microelectronic Test Structures (ICMTS)","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121672234","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Session 10: TFTs 第十场:TFTs
2019 IEEE 32nd International Conference on Microelectronic Test Structures (ICMTS) Pub Date : 2019-03-01 DOI: 10.1109/icmts.2019.8730916
{"title":"Session 10: TFTs","authors":"","doi":"10.1109/icmts.2019.8730916","DOIUrl":"https://doi.org/10.1109/icmts.2019.8730916","url":null,"abstract":"","PeriodicalId":333915,"journal":{"name":"2019 IEEE 32nd International Conference on Microelectronic Test Structures (ICMTS)","volume":"94 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115641076","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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