测量igbt中少数载流子寿命的垂直双极晶体管测试结构

2019 IEEE 32nd International Conference on Microelectronic Test Structures (ICMTS) Pub Date : 2019-03-01 DOI:10.1109/ICMTS.2019.8730922

K. Takeuchi, M. Fukui, T. Saraya, K. Itou, T. Takakura, S. Suzuki, Y. Numasawa, K. Kakushima, T. Hoshii, K. Furukawa, M. Watanabe, N. Shigyo, H. Wakabayashi, M. Tsukuda, A. Ogura, K. Tsutsui, H. Iwai, S. Nishizawa, I. Omura, H. Ohashi, T. Hiramoto

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引用次数: 1

摘要

制作了垂直PNP双极晶体管测试结构，该结构可与功能igbt集成在同一晶圆上。通过对漏背结施加零电压来测量共基极电流增益，从中提取基极区域的少数载流子寿命。该结构使得测量实际IGBT制造工艺流程后的寿命成为可能，并将其与同一晶圆上的IGBT特性相关联。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Vertical Bipolar Transistor Test Structure for Measuring Minority Carrier Lifetime in IGBTs

Vertical PNP bipolar transistor test structures were fabricated, which can be integrated on the same wafer with functional IGBTs. Common-base current gain was measured by applying zero voltage to the leaky back side junction, from which minority carrier lifetime in the base region was extracted. The structure makes it possible to measure the lifetime after a real IGBT fabrication process flow, and to correlate it with the characteristics of IGBTs on the same wafer.

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来源期刊

2019 IEEE 32nd International Conference on Microelectronic Test Structures (ICMTS)

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