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2017 IEEE 37th International Conference on Electronics and Nanotechnology (ELNANO)最新文献

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Sensors on FET with porous silicon 多孔硅FET传感器
2017 IEEE 37th International Conference on Electronics and Nanotechnology (ELNANO) Pub Date : 2017-04-01 DOI: 10.1109/ELNANO.2017.7939739
M. Dusheiko, V. Ilchenko, T. Obukhova, M. Stepanova
{"title":"Sensors on FET with porous silicon","authors":"M. Dusheiko, V. Ilchenko, T. Obukhova, M. Stepanova","doi":"10.1109/ELNANO.2017.7939739","DOIUrl":"https://doi.org/10.1109/ELNANO.2017.7939739","url":null,"abstract":"In the paper field-effect transistors with porous silicon layer in the gate area are described. Such structures can be used for vapor detection as well as in liquids. It was shown that depending on formation conditions porous silicon layer formed by different etching methods can be selective between substances.","PeriodicalId":333746,"journal":{"name":"2017 IEEE 37th International Conference on Electronics and Nanotechnology (ELNANO)","volume":"257 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132216219","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Deformation characteristics of SOI structures at cryogenic temperatures SOI结构在低温下的变形特性
2017 IEEE 37th International Conference on Electronics and Nanotechnology (ELNANO) Pub Date : 2017-04-01 DOI: 10.1109/ELNANO.2017.7939723
A. Druzhinin, Y. Khoverko, Iu. Kogut, V. Holota
{"title":"Deformation characteristics of SOI structures at cryogenic temperatures","authors":"A. Druzhinin, Y. Khoverko, Iu. Kogut, V. Holota","doi":"10.1109/ELNANO.2017.7939723","DOIUrl":"https://doi.org/10.1109/ELNANO.2017.7939723","url":null,"abstract":"We investigate the strain-induced effect in silicon-on-insulator structures (SOI) doped with boron impurities to the vicinity of a metal-dielectric transition. The studies of gauge-factor of polycrystalline silicon films in SOI-structures with boron concentration ranging from 2.4×10<sup>18</sup> cm<sup>−3</sup> to 1.7×10<sup>20</sup> cm<sup>−3</sup> were conducted in the temperature range 4, 2–100 K. The possibility of use of polycrystalline films in mechanical sensors, operable in cryogenic temperatures is discussed. We found that the gauge factor of SOI-structure depends on the mobility of charge carriers.","PeriodicalId":333746,"journal":{"name":"2017 IEEE 37th International Conference on Electronics and Nanotechnology (ELNANO)","volume":"101 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132249174","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Diagnostics of thermal stress in MEMS pressure transducer based on Tenso-e.m.f. effect 基于tenso - emf的MEMS压力传感器热应力诊断。效果
2017 IEEE 37th International Conference on Electronics and Nanotechnology (ELNANO) Pub Date : 2017-04-01 DOI: 10.1109/ELNANO.2017.7939749
I. Mikhailenko, A. Orlov, B. Serdega
{"title":"Diagnostics of thermal stress in MEMS pressure transducer based on Tenso-e.m.f. effect","authors":"I. Mikhailenko, A. Orlov, B. Serdega","doi":"10.1109/ELNANO.2017.7939749","DOIUrl":"https://doi.org/10.1109/ELNANO.2017.7939749","url":null,"abstract":"The article examines physical principles, conceptual design and fabrication of integrated pressure transducer manufactured by means of microelectronic technology — MEMS and its optimization questions. Spatial distribution of the intrinsic stress caused by the transducer manufacturing and its current heating by supply current was studied by the method of modulation polarimetry.","PeriodicalId":333746,"journal":{"name":"2017 IEEE 37th International Conference on Electronics and Nanotechnology (ELNANO)","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128713086","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
The effect of hydrostatic pressure on the indium antimonide thin films 静水压力对锑化铟薄膜的影响
2017 IEEE 37th International Conference on Electronics and Nanotechnology (ELNANO) Pub Date : 2017-04-01 DOI: 10.1109/ELNANO.2017.7939724
A. Druzhinin, A. Kutrakov, N. Liakh-Kaguy
{"title":"The effect of hydrostatic pressure on the indium antimonide thin films","authors":"A. Druzhinin, A. Kutrakov, N. Liakh-Kaguy","doi":"10.1109/ELNANO.2017.7939724","DOIUrl":"https://doi.org/10.1109/ELNANO.2017.7939724","url":null,"abstract":"Studies the effect of hydrostatic pressure on the indium antimonide thin films n- and p-type conductivity were carried out in the temperature range (−180 ÷ +100) °C. Temperature dependences of the resistance and hydrostatic pressure coefficient for sensitive elements based on InSb thin films doped with zinc and tellurium were studied. Obtained the high values of hydrostatic pressure coefficient and linear character its temperature dependence allows to suggest doped InSb thin films promising material for creating of the hydrostatic pressure sensors up to 5000 bar on their basis operating in the climatic temperature range.","PeriodicalId":333746,"journal":{"name":"2017 IEEE 37th International Conference on Electronics and Nanotechnology (ELNANO)","volume":"51 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115991630","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Atomistic simulation of two-dimensional titanium carbide Ti2C fracture under uniform tensile strain 均匀拉伸应变下二维碳化钛Ti2C断裂的原子模拟
2017 IEEE 37th International Conference on Electronics and Nanotechnology (ELNANO) Pub Date : 2017-04-01 DOI: 10.1109/ELNANO.2017.7939735
V. Borysiuk
{"title":"Atomistic simulation of two-dimensional titanium carbide Ti2C fracture under uniform tensile strain","authors":"V. Borysiuk","doi":"10.1109/ELNANO.2017.7939735","DOIUrl":"https://doi.org/10.1109/ELNANO.2017.7939735","url":null,"abstract":"The paper presents the results of the computer simulation of the failure dynamic of two-dimensional (or graphene like) titanium carbide Ti2C. The behavior of the sample under uniform tensile strain is studied within classical molecular dynamic (MD) simulation technique. Atomic configurations of the Ti2C nanosheet were computed for different values of the tensile strain. Performed simulation shows that cracks in the sample occur at strain of 0.07. Elastic constant of the Ti2C estimated from the strain-stress curve during uniform tension agrees with reported earlier values.","PeriodicalId":333746,"journal":{"name":"2017 IEEE 37th International Conference on Electronics and Nanotechnology (ELNANO)","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116921325","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Reduction of the input current harmonic content in matrix converters under unbalance of the input voltages and the load 降低矩阵变换器在输入电压与负载不平衡情况下的输入电流谐波含量
2017 IEEE 37th International Conference on Electronics and Nanotechnology (ELNANO) Pub Date : 2017-04-01 DOI: 10.1109/ELNANO.2017.7939807
V. Mykhalskyi, V. Sobolev, V. Chopyk, S. Polishchuk, Ivan Shapoval
{"title":"Reduction of the input current harmonic content in matrix converters under unbalance of the input voltages and the load","authors":"V. Mykhalskyi, V. Sobolev, V. Chopyk, S. Polishchuk, Ivan Shapoval","doi":"10.1109/ELNANO.2017.7939807","DOIUrl":"https://doi.org/10.1109/ELNANO.2017.7939807","url":null,"abstract":"The matrix converter control method is proposed and investigated, which aims to improve the quality of input currents under input and output unbalanced conditions. The process of forming the input current space vector consists of two independent ways of dynamic modulation of its reactive component. The first one is based on the considering of a symmetrical negative sequence component of the input voltage. The second one is based on the considering of reactive part of the symmetrical component of the negative sequence of output current. It has been determined operating limits in which the proposed modulation methods can be fully implemented. The simulation results of input currents based on actual conditions and switching discrete formation of these currents are presented to confirm the proposed approach.","PeriodicalId":333746,"journal":{"name":"2017 IEEE 37th International Conference on Electronics and Nanotechnology (ELNANO)","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125662838","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Increasing of the MR imaging spatial resolution by data estimation in k-space 利用k空间数据估计提高磁共振成像空间分辨率
2017 IEEE 37th International Conference on Electronics and Nanotechnology (ELNANO) Pub Date : 2017-04-01 DOI: 10.1109/ELNANO.2017.7939769
O. Naguliak, A. Netreba, S. Radchenko, O. Sudakov
{"title":"Increasing of the MR imaging spatial resolution by data estimation in k-space","authors":"O. Naguliak, A. Netreba, S. Radchenko, O. Sudakov","doi":"10.1109/ELNANO.2017.7939769","DOIUrl":"https://doi.org/10.1109/ELNANO.2017.7939769","url":null,"abstract":"The new method for obtaining images with high resolution so called super resolution (SR) images is proposed. The proposed method is to increase the spatial resolution of the images with low resolution. The low-resolution images (LR) obtained using different angle data acquisition of the same field of view FOV. The proposed technique for SR imaging is supposed to reduce the acquisition time and increase spatial resolution while hardware limits. The evaluation of the quality of tomograms for different methods of signal data set estimation has been carried out.","PeriodicalId":333746,"journal":{"name":"2017 IEEE 37th International Conference on Electronics and Nanotechnology (ELNANO)","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127372722","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Nonlinear properties of electron gas in n-InSb and graphene in THz range under finite temperatures 有限温度下n-InSb和石墨烯中太赫兹范围内电子气体的非线性性质
2017 IEEE 37th International Conference on Electronics and Nanotechnology (ELNANO) Pub Date : 2017-04-01 DOI: 10.1109/ELNANO.2017.7939815
V. Grimalsky, S. Koshevaya, J. Escobedo-Alatorre, Y. Rapoport
{"title":"Nonlinear properties of electron gas in n-InSb and graphene in THz range under finite temperatures","authors":"V. Grimalsky, S. Koshevaya, J. Escobedo-Alatorre, Y. Rapoport","doi":"10.1109/ELNANO.2017.7939815","DOIUrl":"https://doi.org/10.1109/ELNANO.2017.7939815","url":null,"abstract":"The nonlinear properties in THz range of 3D electron gas in narrow-gap n-InSb semiconductor and 2D one in graphene are investigated theoretically. The nonlinear dependencies of the density of electric current on the applied electric field have been computed from the kinetic approach under finite temperatures. A comparison has been done with the analytic dependencies obtained when an influence of the finite temperature was neglected. For n-InSb the nonlinear dependencies practically coincide with analytic ones, whereas for graphene there are some quantitative differences.","PeriodicalId":333746,"journal":{"name":"2017 IEEE 37th International Conference on Electronics and Nanotechnology (ELNANO)","volume":"55 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121028752","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Configurational resonances of absorption of light by thin Teflon films with metallic nanoinclusions 含金属纳米内含物的聚四氟乙烯薄膜吸收光的构型共振
2017 IEEE 37th International Conference on Electronics and Nanotechnology (ELNANO) Pub Date : 2017-04-01 DOI: 10.1109/ELNANO.2017.7939720
V. Lozovski, M. Razumova, T. Vasiliev
{"title":"Configurational resonances of absorption of light by thin Teflon films with metallic nanoinclusions","authors":"V. Lozovski, M. Razumova, T. Vasiliev","doi":"10.1109/ELNANO.2017.7939720","DOIUrl":"https://doi.org/10.1109/ELNANO.2017.7939720","url":null,"abstract":"Absorption of thin films with gold, silver and copper spheroidal nanoinclusions was calculated. The dependences of the absorption spectra on the volume fraction, the shape of inclusions and their orientation were analyzed by means of contour maps. The incident monochromatic beams of light are normal to the film surface. The range of the parameters obtained for morphology of the film under study can be used as the optimal conditions of technological process for fabrication of the optically selective absorber coatings, for example, in thermal solar collectors with the desired optical properties.","PeriodicalId":333746,"journal":{"name":"2017 IEEE 37th International Conference on Electronics and Nanotechnology (ELNANO)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132976179","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Structural, electrical properties and degradation processes in the Cu- and Ni-enriched thick-film elements for sensor electronics 传感电子用富铜和富镍厚膜元件的结构、电学性质和降解过程
2017 IEEE 37th International Conference on Electronics and Nanotechnology (ELNANO) Pub Date : 2017-04-01 DOI: 10.1109/ELNANO.2017.7939743
H. Klym
{"title":"Structural, electrical properties and degradation processes in the Cu- and Ni-enriched thick-film elements for sensor electronics","authors":"H. Klym","doi":"10.1109/ELNANO.2017.7939743","DOIUrl":"https://doi.org/10.1109/ELNANO.2017.7939743","url":null,"abstract":"Structural and electrical properties as well as peculiarities of degradation processes in the Cu- and Ni-enriched thick-film elements based on oxymanganospinel ceramics are investigated. The thermal “shock” effect in the initial stage of isothermal exposure at 170 oC with future stabilization of electrical resistance on this level up to final degradation test was revealed. It is shown that high temperature-sensitivity and stabilization of electrical parameters in the studied single-phase thick-film elements can be used for preparation of sensor components based on thick films for micro- and nanoelectronics.","PeriodicalId":333746,"journal":{"name":"2017 IEEE 37th International Conference on Electronics and Nanotechnology (ELNANO)","volume":"49 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133206882","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
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