有限温度下n-InSb和石墨烯中太赫兹范围内电子气体的非线性性质

2017 IEEE 37th International Conference on Electronics and Nanotechnology (ELNANO) Pub Date : 2017-04-01 DOI:10.1109/ELNANO.2017.7939815

V. Grimalsky, S. Koshevaya, J. Escobedo-Alatorre, Y. Rapoport

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引用次数: 1

摘要

从理论上研究了窄间隙n-InSb半导体中三维电子气和石墨烯中二维电子气在太赫兹范围内的非线性特性。用动力学方法计算了有限温度下电流密度对外加电场的非线性依赖关系。并与忽略有限温度影响时的解析依赖关系进行了比较。对于n-InSb，非线性依赖关系实际上与解析依赖关系一致，而对于石墨烯，则存在一些定量差异。

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Nonlinear properties of electron gas in n-InSb and graphene in THz range under finite temperatures

The nonlinear properties in THz range of 3D electron gas in narrow-gap n-InSb semiconductor and 2D one in graphene are investigated theoretically. The nonlinear dependencies of the density of electric current on the applied electric field have been computed from the kinetic approach under finite temperatures. A comparison has been done with the analytic dependencies obtained when an influence of the finite temperature was neglected. For n-InSb the nonlinear dependencies practically coincide with analytic ones, whereas for graphene there are some quantitative differences.

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2017 IEEE 37th International Conference on Electronics and Nanotechnology (ELNANO)

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