传感电子用富铜和富镍厚膜元件的结构、电学性质和降解过程

2017 IEEE 37th International Conference on Electronics and Nanotechnology (ELNANO) Pub Date : 2017-04-01 DOI:10.1109/ELNANO.2017.7939743

H. Klym

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引用次数: 2

摘要

研究了氧化锰钢尖晶石陶瓷中富Cu和富ni厚膜元素的结构、电学性能以及降解过程的特点。揭示了170℃等温暴露初始阶段的热“冲击”效应，并在此水平上稳定电阻直至最终降解试验。结果表明，所研究的单相厚膜元件具有高温敏感性和电参数稳定性，可用于制备基于厚膜的微纳电子学传感器元件。

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Structural, electrical properties and degradation processes in the Cu- and Ni-enriched thick-film elements for sensor electronics

Structural and electrical properties as well as peculiarities of degradation processes in the Cu- and Ni-enriched thick-film elements based on oxymanganospinel ceramics are investigated. The thermal “shock” effect in the initial stage of isothermal exposure at 170 oC with future stabilization of electrical resistance on this level up to final degradation test was revealed. It is shown that high temperature-sensitivity and stabilization of electrical parameters in the studied single-phase thick-film elements can be used for preparation of sensor components based on thick films for micro- and nanoelectronics.

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2017 IEEE 37th International Conference on Electronics and Nanotechnology (ELNANO)

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