多孔硅FET传感器

2017 IEEE 37th International Conference on Electronics and Nanotechnology (ELNANO) Pub Date : 2017-04-01 DOI:10.1109/ELNANO.2017.7939739

M. Dusheiko, V. Ilchenko, T. Obukhova, M. Stepanova

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引用次数: 5

摘要

本文描述了在栅极区有多孔硅层的场效应晶体管。这种结构既可用于液体，也可用于蒸汽检测。结果表明，根据形成条件的不同，采用不同蚀刻方法形成的多孔硅层在物质之间具有选择性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Sensors on FET with porous silicon

In the paper field-effect transistors with porous silicon layer in the gate area are described. Such structures can be used for vapor detection as well as in liquids. It was shown that depending on formation conditions porous silicon layer formed by different etching methods can be selective between substances.

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来源期刊

2017 IEEE 37th International Conference on Electronics and Nanotechnology (ELNANO)

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