Deformation characteristics of SOI structures at cryogenic temperatures

Abstract

We investigate the strain-induced effect in silicon-on-insulator structures (SOI) doped with boron impurities to the vicinity of a metal-dielectric transition. The studies of gauge-factor of polycrystalline silicon films in SOI-structures with boron concentration ranging from 2.4×10¹⁸ cm⁻³ to 1.7×10²⁰ cm⁻³ were conducted in the temperature range 4, 2–100 K. The possibility of use of polycrystalline films in mechanical sensors, operable in cryogenic temperatures is discussed. We found that the gauge factor of SOI-structure depends on the mobility of charge carriers.