发布求助
文献互助 智能选刊 最新文献

2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)最新文献

筛选
英文 中文
1700 Pixels Per Inch (PPI) Passive-Matrix Micro-LED Display Powered by ASIC 1700像素/英寸(PPI)无源矩阵微型led显示屏由ASIC供电
2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2014-12-18 DOI: 10.1109/CSICS.2014.6978524
W. Chong, W. Cho, Z. Liu, Chu Hong Wang, K. Lau
{"title":"1700 Pixels Per Inch (PPI) Passive-Matrix Micro-LED Display Powered by ASIC","authors":"W. Chong, W. Cho, Z. Liu, Chu Hong Wang, K. Lau","doi":"10.1109/CSICS.2014.6978524","DOIUrl":"https://doi.org/10.1109/CSICS.2014.6978524","url":null,"abstract":"We report the first 1700 pixels per inch (PPI) passive-matrix blue light-emitting diodes on silicon (LEDoS) micro-displays. By flip-chip bonding a micro-LED array onto an ASIC display driver, we successfully fabricated a 0.19-inch display with a resolution of 256 x 192, the highest ever reported in LED-based micro-display. In addition, the LEDoS micro-display can deliver brightness as high as 1300 mcd/m2 and render images in 6-bit grayscale. The remarkable performance suggests the tremendous potential of LEDoS micro-displays for portable display applications which require high performance, small size and low power consumption.","PeriodicalId":309722,"journal":{"name":"2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2014-12-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125427134","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 51
Future of GaN RF Technology in Europe 欧洲GaN射频技术的未来
2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2014-12-18 DOI: 10.1109/CSICS.2014.6978556
H. Blanck, J. Splettstober, D. Floriot
{"title":"Future of GaN RF Technology in Europe","authors":"H. Blanck, J. Splettstober, D. Floriot","doi":"10.1109/CSICS.2014.6978556","DOIUrl":"https://doi.org/10.1109/CSICS.2014.6978556","url":null,"abstract":"In the last years GaN has remained a key technology in Europe in particular, but not only, for RF Applications. After an intensive period of research and development the scope has shifted towards industrialization and product development. This is especially true for the applications up to around 20GHz where systems are now being built using European GaN-based components. At the same time, an increasing part of the research activity has moved toward higher frequencies beyond 20GHz.","PeriodicalId":309722,"journal":{"name":"2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2014-12-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130253957","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Backside Process Free Broadband Amplifier MMICs at D-Band and H-Band in 20 nm mHEMT Technology 20nm mHEMT技术中d波段和h波段无后侧工艺宽带放大器mmic
2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2014-12-18 DOI: 10.1109/CSICS.2014.6978544
T. Merkle, A. Leuther, S. Koch, I. Kallfass, A. Tessmann, S. Wagner, H. Massler, M. Schlechtweg, O. Ambacher
{"title":"Backside Process Free Broadband Amplifier MMICs at D-Band and H-Band in 20 nm mHEMT Technology","authors":"T. Merkle, A. Leuther, S. Koch, I. Kallfass, A. Tessmann, S. Wagner, H. Massler, M. Schlechtweg, O. Ambacher","doi":"10.1109/CSICS.2014.6978544","DOIUrl":"https://doi.org/10.1109/CSICS.2014.6978544","url":null,"abstract":"High gain amplifier MMICs (monolithic microwave integrated circuits) addressing broadband radar and communication applications at the waveguide bands WR-6 (110 - 170 GHz) and WR-3 (220 - 325 GHz) are presented. All circuits are manufactured in the next generation metamorphic high electron mobility transistor (mHEMT) technology featuring 20 nm gate length and a strained 100% InAs channel. The transistors are encapsulated by 0.3 μm and 1.4 μm thick layers of benzocyclobutene (BCB). The 1.4 μm thick BCB layer is used to form shielded thin-film microstrip (TFMS) lines confined at the front-side of the wafer for implementing matching networks. Substrate thinning and backside processing is not required for the function of the amplifiers. The amplifier for WR-6 operates over the whole waveguide band with an average gain of 28 dB. A gain of more than 24 dB was measured for the MMIC from 215 - 290 GHz. All presented MMICs exceed 30% of gain defined bandwidth.","PeriodicalId":309722,"journal":{"name":"2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2014-12-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133906787","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 9
Wafer-Scale Millimeter-Wave Phased-Array RFICs 晶圆级毫米波相控阵射频集成电路
2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2014-12-18 DOI: 10.1109/CSICS.2014.6978584
Gabriel M. Rebeiz, W. Shin, F. Golcuk, O. Inac, S. Zihir, O. Gurbuz, J. Edwards, T. Kanar
{"title":"Wafer-Scale Millimeter-Wave Phased-Array RFICs","authors":"Gabriel M. Rebeiz, W. Shin, F. Golcuk, O. Inac, S. Zihir, O. Gurbuz, J. Edwards, T. Kanar","doi":"10.1109/CSICS.2014.6978584","DOIUrl":"https://doi.org/10.1109/CSICS.2014.6978584","url":null,"abstract":"Presents a summary of the millimeter-wave wafer-scale phased array work at UCSD. This concept can drastically reduce the cost of millimeter-wave phased arrays by combining the RFIC blocks, antennas, power distribution and summing, digital control and up and down converters all on the same wafer (or large piece of silicon), and eliminates all RF transitions in and out of the chip, therefore resulting in more efficient systems and lower cost systems. Examples at 90-100 GHz, 108-114 GHz and 400 GHz will be presented in this paper, together with their measured antenna patterns.","PeriodicalId":309722,"journal":{"name":"2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2014-12-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128557126","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Characterization of the High Frequency Performance of 28-nm UTBB FDSOI MOSFETs as a Function of Backgate Bias 28nm UTBB FDSOI mosfet高频性能随后门偏置的函数特性
2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2014-12-18 DOI: 10.1109/CSICS.2014.6978546
S. Shopov, S. Voinigescu
{"title":"Characterization of the High Frequency Performance of 28-nm UTBB FDSOI MOSFETs as a Function of Backgate Bias","authors":"S. Shopov, S. Voinigescu","doi":"10.1109/CSICS.2014.6978546","DOIUrl":"https://doi.org/10.1109/CSICS.2014.6978546","url":null,"abstract":"This paper describes for the first time the high frequency performance characterization of a production 28-nm ultra-thin-body-and-BOX (UTBB) fully-depleted (FD) SOI CMOS technology. The measured g<sub>m</sub>, f<sub>T</sub>, and maximum available gain (MAG) of fully-wired n-channel and p-channel MOSFETs are reported as a function of gate-source, drainsource, back-gate voltages and drain current density. It is shown that the back-gate bias can reduce the V<sub>GS</sub> at which the peak g<sub>m</sub>, peak f<sub>T</sub> and peak MAG occur by up to 400 mV and can flatten the f<sub>T</sub>-V<sub>GS</sub> characteristics, as needed in highly linear amplifiers. The peak g<sub>m</sub>/f<sub>T</sub> values of 1.5mS/μm/298GHz and 0.93mS/μm/194GHz, for n-MOSFETs and p-MOSFETs respectively, match or exceed those of 28-nm LP bulk and 45-nm SOI MOSFETs with identical layout geometry and metal stack wiring.","PeriodicalId":309722,"journal":{"name":"2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2014-12-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129179821","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 18
W-Band GaN Receiver Components Utilizing Highly Scaled, Next Generation GaN Device Technology w波段氮化镓接收器组件，采用高度规模化的下一代氮化镓器件技术
2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2014-12-18 DOI: 10.1109/CSICS.2014.6978585
A. Margomenos, A. Kurdoghlian, M. Micovic, K. Shinohara, H. Moyer, D. Regan, R. Grabar, C. Mcguire, M. Wetzel, D. Chow
{"title":"W-Band GaN Receiver Components Utilizing Highly Scaled, Next Generation GaN Device Technology","authors":"A. Margomenos, A. Kurdoghlian, M. Micovic, K. Shinohara, H. Moyer, D. Regan, R. Grabar, C. Mcguire, M. Wetzel, D. Chow","doi":"10.1109/CSICS.2014.6978585","DOIUrl":"https://doi.org/10.1109/CSICS.2014.6978585","url":null,"abstract":"We report the first W-band GaN receiver components using a next generation, highly scaled GaN device technology. This technology (40nm, fT= 220 GHz, fmax= 400 GHz, Vbrk > 40V) enables receiver components that meet or exceed performance reported by competing device technologies while maintaining > 5x higher breakdown voltage, higher linearity, dynamic range and RF survivability. This paper includes results for a 4 and a 5 stage low noise amplifier (LNA) (gain over 5 dB/stage at 110 GHz), a single-pole single-throw (SPST) and a single-pole double-throw (SPDT) switch with loss of 0.9 dB and 1.3 dB respectively and a reflective type phase shifter","PeriodicalId":309722,"journal":{"name":"2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2014-12-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133941793","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 14
Low Loss, High Performance 1-18 GHz SPDT Based on the Novel Super-Lattice Castellated Field Effect Transistor (SLCFET) 基于新型超晶格阵形场效应晶体管(SLCFET)的低损耗、高性能1-18 GHz SPDT
2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2014-12-18 DOI: 10.1109/CSICS.2014.6978566
R. Howell, E. Stewart, R. Freitag, J. Parke, B. Nechay, H. Cramer, M. King, Shalini Gupta, J. Hartman, P. Borodulin, M. Snook, I. Wathuthanthri, Parrish Ralston, K. Renaldo, H. G. Henry
{"title":"Low Loss, High Performance 1-18 GHz SPDT Based on the Novel Super-Lattice Castellated Field Effect Transistor (SLCFET)","authors":"R. Howell, E. Stewart, R. Freitag, J. Parke, B. Nechay, H. Cramer, M. King, Shalini Gupta, J. Hartman, P. Borodulin, M. Snook, I. Wathuthanthri, Parrish Ralston, K. Renaldo, H. G. Henry","doi":"10.1109/CSICS.2014.6978566","DOIUrl":"https://doi.org/10.1109/CSICS.2014.6978566","url":null,"abstract":"A low loss, high isolation, broadband RF switch has been developed using a novel type of field effect transistor structure that exploits the use of a super-lattice structure in combination with a three dimensional, castellated gate to achieve excellent RF switch performance. Using an AlGaN/GaN super-lattice epitaxial layer, this Super-Lattice Castellated Field Effect Transistor (SLCFET) was used to build 1-18 GHz SPDT RF switches. Measured insertion loss of the SPDT at 10 GHz was -0.4 dB, with -35 dB of isolation and -23 dB of return loss, along with a measured linearity OIP3 value 62 dBm and a P0.1dB of 34 dBm.","PeriodicalId":309722,"journal":{"name":"2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2014-12-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131833749","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 23
First Pass Multi Cell Modeling Strategy for GaN Package Devices GaN封装器件的首次多单元建模策略
2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2014-12-18 DOI: 10.1109/CSICS.2014.6978555
S. Halder, J. McMacken, J. Gering
{"title":"First Pass Multi Cell Modeling Strategy for GaN Package Devices","authors":"S. Halder, J. McMacken, J. Gering","doi":"10.1109/CSICS.2014.6978555","DOIUrl":"https://doi.org/10.1109/CSICS.2014.6978555","url":null,"abstract":"A generic modeling topology is proposed for high power packaged GaN HFET devices leading to first pass design/modeling success. In addition to the EM environment of the package parasitics, the model considers thermal cross coupling and electrode cross coupling effects at the multi-cell device array to arrive at sufficiently accurate model. The model derived by studying a 5-cell GaN part is played back against 1,3,7 cell packaged devices from different types of GaN process to show model agreements at 0.9,2.14 and 3.5 GHz demonstrating acceptable first pass design success.","PeriodicalId":309722,"journal":{"name":"2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2014-12-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115475181","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Model Development for Monolithically-Integrated E/D-Mode Millimeter-Wave InAlN/AlN/GaN HEMTs 单片集成E/ d模毫米波InAlN/AlN/GaN hemt模型开发
2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2014-12-18 DOI: 10.1109/CSICS.2014.6978570
Jun Ren, B. Song, H. Xing, Shuoqi Chen, A. Ketterson, E. Beam, T. Chou, M. Pilla, H. Tserng, Xiang Gao, P. Saunier, P. Fay
{"title":"Model Development for Monolithically-Integrated E/D-Mode Millimeter-Wave InAlN/AlN/GaN HEMTs","authors":"Jun Ren, B. Song, H. Xing, Shuoqi Chen, A. Ketterson, E. Beam, T. Chou, M. Pilla, H. Tserng, Xiang Gao, P. Saunier, P. Fay","doi":"10.1109/CSICS.2014.6978570","DOIUrl":"https://doi.org/10.1109/CSICS.2014.6978570","url":null,"abstract":"Device models to support circuit design efforts using monolithically-integrated enhancement- and depletion-mode high-speed InAlN/AlN/GaN HEMTs are reported. Physically- motivated modifications to the conventional empirical compact models have been included to enhance model accuracy over bias and temperature. The models have been extracted from DC through 110 GHz at baseplate temperatures from 25 °C through 100 °C; good agreement is obtained between measurement results and the extracted model.","PeriodicalId":309722,"journal":{"name":"2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2014-12-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129336133","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
An Active Double-Balanced Down-Conversion Mixer in InP/Si BICMOS Operating from 70-110 GHz 工作频率为70-110 GHz的InP/Si BICMOS有源双平衡下变频混频器
2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2014-12-18 DOI: 10.1109/CSICS.2014.6978540
J. Mccue, M. Casto, J. Li, P. Watson, W. Khalil
{"title":"An Active Double-Balanced Down-Conversion Mixer in InP/Si BICMOS Operating from 70-110 GHz","authors":"J. Mccue, M. Casto, J. Li, P. Watson, W. Khalil","doi":"10.1109/CSICS.2014.6978540","DOIUrl":"https://doi.org/10.1109/CSICS.2014.6978540","url":null,"abstract":"In this paper, a double-balanced Gilbert cell down-conversion mixer is demonstrated from 70-110 GHz. The wide bandwidth and high frequency are enabled by the HRL InP/Si BiCMOS process. With an fT of 300 GHz, the available 0.25 μm InP HBTs are used in the signal path while the 90 nm CMOS devices are used for biasing and gain adjustment. The fully differential circuit is implemented using two on-chip Marchand baluns feeding both the LO and RF ports. An IF buffer follows the mixer to improve matching and signal quality for testing. After de-embedding the balun and IF buffer, the mixer core achieves a peak conversion gain of 13 dB, a minimum DSB NF of 10 dB, and an OP1dB of -2 dBm while consuming 5 mA from a 3.3 V supply.","PeriodicalId":309722,"journal":{"name":"2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2014-12-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130993289","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
下一页 尾页
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整，为了账户安全，请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
请完成安全验证×
相关产品
×
本文献相关产品
联系我们：info@booksci.cn Book学术提供免费学术资源搜索服务，方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号：481959085
Book学术官方微信