欧洲GaN射频技术的未来

2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2014-12-18 DOI:10.1109/CSICS.2014.6978556

H. Blanck, J. Splettstober, D. Floriot

{"title":"欧洲GaN射频技术的未来","authors":"H. Blanck, J. Splettstober, D. Floriot","doi":"10.1109/CSICS.2014.6978556","DOIUrl":null,"url":null,"abstract":"In the last years GaN has remained a key technology in Europe in particular, but not only, for RF Applications. After an intensive period of research and development the scope has shifted towards industrialization and product development. This is especially true for the applications up to around 20GHz where systems are now being built using European GaN-based components. At the same time, an increasing part of the research activity has moved toward higher frequencies beyond 20GHz.","PeriodicalId":309722,"journal":{"name":"2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2014-12-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Future of GaN RF Technology in Europe\",\"authors\":\"H. Blanck, J. Splettstober, D. Floriot\",\"doi\":\"10.1109/CSICS.2014.6978556\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In the last years GaN has remained a key technology in Europe in particular, but not only, for RF Applications. After an intensive period of research and development the scope has shifted towards industrialization and product development. This is especially true for the applications up to around 20GHz where systems are now being built using European GaN-based components. At the same time, an increasing part of the research activity has moved toward higher frequencies beyond 20GHz.\",\"PeriodicalId\":309722,\"journal\":{\"name\":\"2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-12-18\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CSICS.2014.6978556\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CSICS.2014.6978556","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 1

摘要

在过去的几年里，GaN一直是欧洲的一项关键技术，但不仅限于射频应用。经过一段时间的密集研究和开发，范围已经转向产业化和产品开发。对于高达20GHz的应用来说尤其如此，这些应用的系统现在正在使用基于欧洲gan的组件来构建。与此同时，越来越多的研究活动转向了20GHz以上的更高频率。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Future of GaN RF Technology in Europe

In the last years GaN has remained a key technology in Europe in particular, but not only, for RF Applications. After an intensive period of research and development the scope has shifted towards industrialization and product development. This is especially true for the applications up to around 20GHz where systems are now being built using European GaN-based components. At the same time, an increasing part of the research activity has moved toward higher frequencies beyond 20GHz.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)

自引率

0.00%

发文量