Characterization of the High Frequency Performance of 28-nm UTBB FDSOI MOSFETs as a Function of Backgate Bias

S. Shopov, S. Voinigescu
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引用次数: 18

Abstract

This paper describes for the first time the high frequency performance characterization of a production 28-nm ultra-thin-body-and-BOX (UTBB) fully-depleted (FD) SOI CMOS technology. The measured gm, fT, and maximum available gain (MAG) of fully-wired n-channel and p-channel MOSFETs are reported as a function of gate-source, drainsource, back-gate voltages and drain current density. It is shown that the back-gate bias can reduce the VGS at which the peak gm, peak fT and peak MAG occur by up to 400 mV and can flatten the fT-VGS characteristics, as needed in highly linear amplifiers. The peak gm/fT values of 1.5mS/μm/298GHz and 0.93mS/μm/194GHz, for n-MOSFETs and p-MOSFETs respectively, match or exceed those of 28-nm LP bulk and 45-nm SOI MOSFETs with identical layout geometry and metal stack wiring.
28nm UTBB FDSOI mosfet高频性能随后门偏置的函数特性
本文首次描述了量产28纳米超薄体盒(UTBB)全耗尽(FD) SOI CMOS技术的高频性能表征。报告了全有线n沟道和p沟道mosfet的测量gm、fT和最大可用增益(MAG)是栅极源、漏极源、后门电压和漏极电流密度的函数。结果表明,在高线性放大器中,后门偏置可以将峰值gm、峰值fT和峰值MAG产生的VGS降低高达400 mV,并可以使fT-VGS特性变平。n- mosfet和p- mosfet的峰值gm/fT值分别为1.5mS/μm/298GHz和0.93mS/μm/194GHz,匹配或超过具有相同布局几何形状和金属堆叠布线的28 nm LP bulk和45 nm SOI mosfet。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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