Low Loss, High Performance 1-18 GHz SPDT Based on the Novel Super-Lattice Castellated Field Effect Transistor (SLCFET)

R. Howell, E. Stewart, R. Freitag, J. Parke, B. Nechay, H. Cramer, M. King, Shalini Gupta, J. Hartman, P. Borodulin, M. Snook, I. Wathuthanthri, Parrish Ralston, K. Renaldo, H. G. Henry
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引用次数: 23

Abstract

A low loss, high isolation, broadband RF switch has been developed using a novel type of field effect transistor structure that exploits the use of a super-lattice structure in combination with a three dimensional, castellated gate to achieve excellent RF switch performance. Using an AlGaN/GaN super-lattice epitaxial layer, this Super-Lattice Castellated Field Effect Transistor (SLCFET) was used to build 1-18 GHz SPDT RF switches. Measured insertion loss of the SPDT at 10 GHz was -0.4 dB, with -35 dB of isolation and -23 dB of return loss, along with a measured linearity OIP3 value 62 dBm and a P0.1dB of 34 dBm.
基于新型超晶格阵形场效应晶体管(SLCFET)的低损耗、高性能1-18 GHz SPDT
一种低损耗、高隔离的宽带射频开关已经被开发出来,使用一种新型的场效应晶体管结构,利用超晶格结构与三维、城堡状栅极相结合来实现优异的射频开关性能。利用AlGaN/GaN超晶格外延层,该超晶格城堡场效应晶体管(SLCFET)被用于构建1-18 GHz SPDT射频开关。SPDT在10 GHz时的插入损耗为-0.4 dB,隔离度为-35 dB,回波损耗为-23 dB,线性度OIP3为62 dBm, P0.1dB为34 dBm。
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