w波段氮化镓接收器组件，采用高度规模化的下一代氮化镓器件技术

2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2014-12-18 DOI:10.1109/CSICS.2014.6978585

A. Margomenos, A. Kurdoghlian, M. Micovic, K. Shinohara, H. Moyer, D. Regan, R. Grabar, C. Mcguire, M. Wetzel, D. Chow

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引用次数: 14

摘要

我们报告了第一个使用下一代高规模GaN器件技术的w波段GaN接收器组件。该技术(40nm, fT= 220 GHz, fmax= 400 GHz, Vbrk > 40V)使接收器组件能够达到或超过竞争设备技术所报告的性能，同时保持> 5倍的高击穿电压，更高的线性度，动态范围和RF生存性。本文包括4级和5级低噪声放大器(LNA) (110 GHz时增益超过5 dB/级)、单极单掷(SPST)和单极双掷(SPDT)开关(损耗分别为0.9 dB和1.3 dB)以及反射型移相器的结果

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W-Band GaN Receiver Components Utilizing Highly Scaled, Next Generation GaN Device Technology

We report the first W-band GaN receiver components using a next generation, highly scaled GaN device technology. This technology (40nm, fT= 220 GHz, fmax= 400 GHz, Vbrk > 40V) enables receiver components that meet or exceed performance reported by competing device technologies while maintaining > 5x higher breakdown voltage, higher linearity, dynamic range and RF survivability. This paper includes results for a 4 and a 5 stage low noise amplifier (LNA) (gain over 5 dB/stage at 110 GHz), a single-pole single-throw (SPST) and a single-pole double-throw (SPDT) switch with loss of 0.9 dB and 1.3 dB respectively and a reflective type phase shifter

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2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)

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