20nm mHEMT技术中d波段和h波段无后侧工艺宽带放大器mmic

T. Merkle, A. Leuther, S. Koch, I. Kallfass, A. Tessmann, S. Wagner, H. Massler, M. Schlechtweg, O. Ambacher
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引用次数: 9

摘要

提出了在WR-6 (110 - 170 GHz)和WR-3 (220 - 325 GHz)波导波段处理宽带雷达和通信应用的高增益放大器mmic(单片微波集成电路)。所有电路均采用下一代高电子迁移率晶体管(mHEMT)技术制造,具有20nm栅极长度和应变100% InAs通道。晶体管由0.3 μm和1.4 μm厚的苯并环丁烯(BCB)层封装。1.4 μm厚的BCB层用于形成限制在晶圆前端的屏蔽薄膜微带(TFMS)线,以实现匹配网络。对于放大器的功能,衬底减薄和背面处理是不需要的。WR-6的放大器工作在整个波导波段,平均增益为28 dB。在215 - 290 GHz范围内测量了超过24 dB的增益。所有的mmic都超过了增益定义带宽的30%。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Backside Process Free Broadband Amplifier MMICs at D-Band and H-Band in 20 nm mHEMT Technology
High gain amplifier MMICs (monolithic microwave integrated circuits) addressing broadband radar and communication applications at the waveguide bands WR-6 (110 - 170 GHz) and WR-3 (220 - 325 GHz) are presented. All circuits are manufactured in the next generation metamorphic high electron mobility transistor (mHEMT) technology featuring 20 nm gate length and a strained 100% InAs channel. The transistors are encapsulated by 0.3 μm and 1.4 μm thick layers of benzocyclobutene (BCB). The 1.4 μm thick BCB layer is used to form shielded thin-film microstrip (TFMS) lines confined at the front-side of the wafer for implementing matching networks. Substrate thinning and backside processing is not required for the function of the amplifiers. The amplifier for WR-6 operates over the whole waveguide band with an average gain of 28 dB. A gain of more than 24 dB was measured for the MMIC from 215 - 290 GHz. All presented MMICs exceed 30% of gain defined bandwidth.
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