T. Merkle, A. Leuther, S. Koch, I. Kallfass, A. Tessmann, S. Wagner, H. Massler, M. Schlechtweg, O. Ambacher
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Backside Process Free Broadband Amplifier MMICs at D-Band and H-Band in 20 nm mHEMT Technology
High gain amplifier MMICs (monolithic microwave integrated circuits) addressing broadband radar and communication applications at the waveguide bands WR-6 (110 - 170 GHz) and WR-3 (220 - 325 GHz) are presented. All circuits are manufactured in the next generation metamorphic high electron mobility transistor (mHEMT) technology featuring 20 nm gate length and a strained 100% InAs channel. The transistors are encapsulated by 0.3 μm and 1.4 μm thick layers of benzocyclobutene (BCB). The 1.4 μm thick BCB layer is used to form shielded thin-film microstrip (TFMS) lines confined at the front-side of the wafer for implementing matching networks. Substrate thinning and backside processing is not required for the function of the amplifiers. The amplifier for WR-6 operates over the whole waveguide band with an average gain of 28 dB. A gain of more than 24 dB was measured for the MMIC from 215 - 290 GHz. All presented MMICs exceed 30% of gain defined bandwidth.
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