发布求助
文献互助 智能选刊 最新文献

2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)最新文献

筛选
英文 中文
Enabling Power-Efficient Designs with III-V Tunnel FETs 利用III-V隧道场效应管实现节能设计
2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2014-10-01 DOI: 10.1109/CSICS.2014.6978551
M. Kim, Huichu Liu, Karthik Swaminathan, Xueqing Li, S. Datta, V. Narayanan
{"title":"Enabling Power-Efficient Designs with III-V Tunnel FETs","authors":"M. Kim, Huichu Liu, Karthik Swaminathan, Xueqing Li, S. Datta, V. Narayanan","doi":"10.1109/CSICS.2014.6978551","DOIUrl":"https://doi.org/10.1109/CSICS.2014.6978551","url":null,"abstract":"III-V Tunnel FETs (TFET) possess unique characteristics such as steep slope switching, high gm/IDS, uni-directional conduction, and low voltage operating capability. These characteristics have the potential to result in energy savings in both digital and analog applications. In this paper, we provide an overview of the power efficient properties of III-V TFETs and designs at the device, circuit and architectural level.","PeriodicalId":309722,"journal":{"name":"2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2014-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121527859","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 13
High Resolution Thermal Characterization and Simulation of Power AlGaN/GaN HEMTs Using Micro-Raman Thermography and 800 Picosecond Transient Thermoreflectance Imaging 基于微拉曼热成像和800皮秒瞬态热反射成像的功率AlGaN/GaN hemt高分辨率热表征与仿真
2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2014-10-01 DOI: 10.1109/CSICS.2014.6978561
K. Maize, G. Pavlidis, E. Heller, Luke Yates, D. Kendig, S. Graham, A. Shakouri
{"title":"High Resolution Thermal Characterization and Simulation of Power AlGaN/GaN HEMTs Using Micro-Raman Thermography and 800 Picosecond Transient Thermoreflectance Imaging","authors":"K. Maize, G. Pavlidis, E. Heller, Luke Yates, D. Kendig, S. Graham, A. Shakouri","doi":"10.1109/CSICS.2014.6978561","DOIUrl":"https://doi.org/10.1109/CSICS.2014.6978561","url":null,"abstract":"Self-heating in gallium nitride based high frequency, high electron mobility power transistors (GaN HEMTs) is inspected using micro-Raman thermography and 800 picosecond transient thermoreflectance imaging. The two methods provide complementary temperature information inside the semiconductor and on top metal layers of the GaN HEMT. Self heating is measured under both steady-state and ultra-fast pulsed transient operation with submicron spatial resolution, 50 milliKelvin temperature resolution, and nanosecond time resolution. Fine grain electrothermal modeling of the HEMT steady state and transient self-heating are presented alongside measurements. Large spatial and temporal temperature gradients are quantified. Deviations due to unknown parameters are discussed.","PeriodicalId":309722,"journal":{"name":"2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2014-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125223617","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 37
A Compact Low-Power 224-Gb/s DP-16QAM Modulator Module with InP-Based Modulator and Linear Driver ICs 一种紧凑的低功耗24gb /s DP-16QAM调制器模块，具有基于inp的调制器和线性驱动ic
2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2014-03-09 DOI: 10.1364/OFC.2014.TU3H.5
T. Tatsumi, Naoki Itabashi, T. Ikagawa, N. Kono, M. Seki, Keiji Tanaka, K. Yamaji, Y. Fujimura, K. Uesaka, T. Nakabayashi, H. Shoji, S. Ogita
{"title":"A Compact Low-Power 224-Gb/s DP-16QAM Modulator Module with InP-Based Modulator and Linear Driver ICs","authors":"T. Tatsumi, Naoki Itabashi, T. Ikagawa, N. Kono, M. Seki, Keiji Tanaka, K. Yamaji, Y. Fujimura, K. Uesaka, T. Nakabayashi, H. Shoji, S. Ogita","doi":"10.1364/OFC.2014.TU3H.5","DOIUrl":"https://doi.org/10.1364/OFC.2014.TU3H.5","url":null,"abstract":"We have fabricated a compact 224-Gb/s dual-polarization 16-ary quadrature amplitude modulation (DP-16QAM) modulator module consisting of InP-based Mach-Zehnder modulators (MZMs), linear driver ICs and polarization multiplexing micro-optics. We have demonstrated a very low power dissipation of 3.2 W with comparable performance to LiNbO3-based modulator in back-to-back operation.","PeriodicalId":309722,"journal":{"name":"2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2014-03-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124971265","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 25
首页 上一页
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整，为了账户安全，请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
请完成安全验证×
相关产品
×
本文献相关产品
联系我们：info@booksci.cn Book学术提供免费学术资源搜索服务，方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号：481959085
Book学术官方微信