2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)最新文献_第6页

Evolution of Multi-Gigabit Wireline Transceivers in CMOS CMOS中多千兆有线收发器的发展

2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2014-10-01 DOI: 10.1109/CSICS.2014.6978553

I. Fujimori

引用次数: 3

Advanced Process and Modeling on 600+ GHz Emitter Ledge Type-II GaAsSb/InP DHBT 600+ GHz发射架型ii型GaAsSb/InP DHBT的先进工艺与建模

2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2014-10-01 DOI: 10.1109/CSICS.2014.6978537

Huiming Xu, Barry Wu, Ardy Winoto, M. Feng

引用次数: 1

Programmable Active Clock Spine for 100Gb/200Gb Coherent Optical Receiver Chip in 32nm CMOS 用于100Gb/200Gb 32nm CMOS相干光接收芯片的可编程有源时钟脊柱

2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2014-10-01 DOI: 10.1109/CSICS.2014.6978574

Naim Ben-Hamida, C. Kurowski, R. Gibbins, J. Weng, Ted Wong, John Lindsay, H. Mah, S. Aouini, Andrew McCarthy

引用次数: 0

Diverse Accessible Heterogeneous Integration (DAHI) at Northrop Grumman Aerospace Systems (NGAS) 诺斯罗普·格鲁曼航空航天系统公司(NGAS)的多样化可访问异构集成(DAHI)

2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2014-10-01 DOI: 10.1109/CSICS.2014.6978550

A. Gutierrez-Aitken, K. Hennig, D. Scott, Kenneth F. Sato, Wes Chan, B. Poust, Xiang Zeng, K. Thai, Eric B. Nakamura, E. Kaneshiro, Nancy Lin, C. Monier, I. Smorchkova, B. Oyama, A. Oki, R. Kagiwada, G. Chao

引用次数: 21

An Evaluation of Extraction Methods for the Emitter Resistance for InP DHBTs InP dhbt发射极电阻提取方法的评价

2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2014-10-01 DOI: 10.1109/CSICS.2014.6978541

T. Nardmann, J. Krause, M. Schroter

引用次数: 4

GaN for Next Generation Electronics 下一代电子GaN

2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2014-10-01 DOI: 10.1109/CSICS.2014.6978558

P. Saunier

{"title":"GaN for Next Generation Electronics","authors":"P. Saunier","doi":"10.1109/CSICS.2014.6978558","DOIUrl":"https://doi.org/10.1109/CSICS.2014.6978558","url":null,"abstract":"We report the development of a new generation of GaN devices and their performance. This new E/D technology based on \"Si-like\" processes will offer the possibility of competing with Si-Ge and C-MOS devices for mixed-mode circuits and mm-Wave array applications. The advantage comes from their superior breakdown voltages and ft/fmax while using processes and geometries only known so far by the Si industry. We are reviewing the performances of these devices developed under the DARPA NEXT program at TriQuint and other companies (HRL). At TriQuint, 30nm self-aligned gate InAlN/AlN/GaN devices achieved simultaneous fT/fmax of 359/347GHz. Thanks to their reduced geometry, these devices make excellent low-voltage RF devices. We published excellent performances at 10GHz with up to 67-69% PAE at 6V bias and 30GHz with up to 14.4dB associated gain and 2.6W/mm, 39.6% PAE at 8V bias. The Noise Figure of these devices at 10GHz was ~0.25dB with 3V drain bias. HRL has demonstrated fT/fmax as high as 454/444GHz at Vd=3V with a 20nm gate self-aligned device. It is tempting to envision a GaN-on-Si technology based on such devices where a fabrication process fully compatible with a Si foundry would allow the use of 8\" wafers but more importantly the use of a large number of interconnect layers with micron and sub-micron geometries, both unknown to the III-V world. Preliminary work has been reported by Raytheon with GaN transistors on a 200 mm GaN-on-Si wafer (grown by MBE) fabricated with Au free metallurgy.","PeriodicalId":309722,"journal":{"name":"2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2014-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133187054","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 3

Linear Optical Modulator for DAC-Based Coherent Fiber Communications Systems 基于dac的相干光纤通信系统的线性光调制器

2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2014-10-01 DOI: 10.1109/CSICS.2014.6978565

H. Yamazaki

引用次数: 3

GaN Technology in Base Stations - Why and When? GaN技术在基站中的应用——为什么?何时?

2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2014-10-01 DOI: 10.1109/CSICS.2014.6978560

E. Higham

引用次数: 7

Broadband Doherty Alternative with Filter Design Considerations 带滤波器设计考虑的宽带多尔蒂替代方案

2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2014-10-01 DOI: 10.1109/CSICS.2014.6978545

Jeffrey K. Jones, B. Noori, J. Frei, Enver Krvavac

引用次数: 0

Analysis of the Influence of Layout and Technology Parameters on the Thermal Impedance of GaAs HBT/BiFET Using a Highly-Efficient Tool 利用高效工具分析布局和工艺参数对GaAs HBT/BiFET热阻抗的影响

2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2014-10-01 DOI: 10.1109/CSICS.2014.6978543

A. Magnani, V. d’Alessandro, L. Codecasa, P. Zampardi, B. Moser, N. Rinaldi

引用次数: 23