A. Gutierrez-Aitken, K. Hennig, D. Scott, Kenneth F. Sato, Wes Chan, B. Poust, Xiang Zeng, K. Thai, Eric B. Nakamura, E. Kaneshiro, Nancy Lin, C. Monier, I. Smorchkova, B. Oyama, A. Oki, R. Kagiwada, G. Chao
{"title":"Diverse Accessible Heterogeneous Integration (DAHI) at Northrop Grumman Aerospace Systems (NGAS)","authors":"A. Gutierrez-Aitken, K. Hennig, D. Scott, Kenneth F. Sato, Wes Chan, B. Poust, Xiang Zeng, K. Thai, Eric B. Nakamura, E. Kaneshiro, Nancy Lin, C. Monier, I. Smorchkova, B. Oyama, A. Oki, R. Kagiwada, G. Chao","doi":"10.1109/CSICS.2014.6978550","DOIUrl":null,"url":null,"abstract":"Northrop Grumman Aerospace Systems (NGAS) under the Diverse Accessible Heterojunction Integration (DAHI) DARPA program is developing heterogeneous integration processes, process design kit (PDK) and thermal analysis tools to integrate deep submicron CMOS, Indium Phosphide (InP) heterojunction bipolar transistors (HBTs), Gallium Nitride (GaN) high electron mobility transistors (HEMTs) and high-Q passive technologies for advanced DoD and other government systems.","PeriodicalId":309722,"journal":{"name":"2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2014-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"21","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CSICS.2014.6978550","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 21
Abstract
Northrop Grumman Aerospace Systems (NGAS) under the Diverse Accessible Heterojunction Integration (DAHI) DARPA program is developing heterogeneous integration processes, process design kit (PDK) and thermal analysis tools to integrate deep submicron CMOS, Indium Phosphide (InP) heterojunction bipolar transistors (HBTs), Gallium Nitride (GaN) high electron mobility transistors (HEMTs) and high-Q passive technologies for advanced DoD and other government systems.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
