诺斯罗普·格鲁曼航空航天系统公司(NGAS)的多样化可访问异构集成(DAHI)

2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2014-10-01 DOI:10.1109/CSICS.2014.6978550

A. Gutierrez-Aitken, K. Hennig, D. Scott, Kenneth F. Sato, Wes Chan, B. Poust, Xiang Zeng, K. Thai, Eric B. Nakamura, E. Kaneshiro, Nancy Lin, C. Monier, I. Smorchkova, B. Oyama, A. Oki, R. Kagiwada, G. Chao

{"title":"诺斯罗普·格鲁曼航空航天系统公司(NGAS)的多样化可访问异构集成(DAHI)","authors":"A. Gutierrez-Aitken, K. Hennig, D. Scott, Kenneth F. Sato, Wes Chan, B. Poust, Xiang Zeng, K. Thai, Eric B. Nakamura, E. Kaneshiro, Nancy Lin, C. Monier, I. Smorchkova, B. Oyama, A. Oki, R. Kagiwada, G. Chao","doi":"10.1109/CSICS.2014.6978550","DOIUrl":null,"url":null,"abstract":"Northrop Grumman Aerospace Systems (NGAS) under the Diverse Accessible Heterojunction Integration (DAHI) DARPA program is developing heterogeneous integration processes, process design kit (PDK) and thermal analysis tools to integrate deep submicron CMOS, Indium Phosphide (InP) heterojunction bipolar transistors (HBTs), Gallium Nitride (GaN) high electron mobility transistors (HEMTs) and high-Q passive technologies for advanced DoD and other government systems.","PeriodicalId":309722,"journal":{"name":"2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2014-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"21","resultStr":"{\"title\":\"Diverse Accessible Heterogeneous Integration (DAHI) at Northrop Grumman Aerospace Systems (NGAS)\",\"authors\":\"A. Gutierrez-Aitken, K. Hennig, D. Scott, Kenneth F. Sato, Wes Chan, B. Poust, Xiang Zeng, K. Thai, Eric B. Nakamura, E. Kaneshiro, Nancy Lin, C. Monier, I. Smorchkova, B. Oyama, A. Oki, R. Kagiwada, G. Chao\",\"doi\":\"10.1109/CSICS.2014.6978550\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Northrop Grumman Aerospace Systems (NGAS) under the Diverse Accessible Heterojunction Integration (DAHI) DARPA program is developing heterogeneous integration processes, process design kit (PDK) and thermal analysis tools to integrate deep submicron CMOS, Indium Phosphide (InP) heterojunction bipolar transistors (HBTs), Gallium Nitride (GaN) high electron mobility transistors (HEMTs) and high-Q passive technologies for advanced DoD and other government systems.\",\"PeriodicalId\":309722,\"journal\":{\"name\":\"2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"21\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CSICS.2014.6978550\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CSICS.2014.6978550","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 21

摘要

诺斯罗普·格鲁曼航空航天系统公司(NGAS)在DARPA多样化可及异质结集成(DAHI)项目下，正在开发异质集成工艺、工艺设计套件(PDK)和热分析工具，以集成深亚微米CMOS、磷化铟(InP)异质结双极晶体管(HBTs)、氮化镓(GaN)高电子迁移率晶体管(HEMTs)和高q无源技术，用于先进的国防部和其他政府系统。

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Diverse Accessible Heterogeneous Integration (DAHI) at Northrop Grumman Aerospace Systems (NGAS)

Northrop Grumman Aerospace Systems (NGAS) under the Diverse Accessible Heterojunction Integration (DAHI) DARPA program is developing heterogeneous integration processes, process design kit (PDK) and thermal analysis tools to integrate deep submicron CMOS, Indium Phosphide (InP) heterojunction bipolar transistors (HBTs), Gallium Nitride (GaN) high electron mobility transistors (HEMTs) and high-Q passive technologies for advanced DoD and other government systems.

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来源期刊

2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)

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