利用高效工具分析布局和工艺参数对GaAs HBT/BiFET热阻抗的影响

2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2014-10-01 DOI:10.1109/CSICS.2014.6978543

A. Magnani, V. d’Alessandro, L. Codecasa, P. Zampardi, B. Moser, N. Rinaldi

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引用次数: 23

摘要

这项工作的重点是分析先进的GaAs HBTs的动态热行为，特别强调biet技术，其中phemt集成在传统的双极器件之下。采用一种新型的高效工具来确定关键布局和技术特征对热阻抗的影响，即发射极和基极集电极台面的尺寸，pHEMT层和金属化结构。该工具依赖于多点矩匹配算法，并且允许CPU时间和内存存储远远低于商用数值软件包所需的时间和内存。

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Analysis of the Influence of Layout and Technology Parameters on the Thermal Impedance of GaAs HBT/BiFET Using a Highly-Efficient Tool

This work is focused on the analysis of the dynamic thermal behavior of advanced GaAs HBTs, with particular emphasis on BiFET technologies, where pHEMTs are integrated below the conventional bipolar device. A novel highly-efficient tool is employed to determine the influence on the thermal impedance of the key layout and technology features, namely, size of the emitter and base-collector mesa, pHEMT layers, and metallization architecture. The tool relies on the multi-point moment matching algorithm, and allows CPU time and memory storage much lower than those required by commercially-available numerical software packages.

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2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)

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