GaN for Next Generation Electronics

P. Saunier
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引用次数: 3

Abstract

We report the development of a new generation of GaN devices and their performance. This new E/D technology based on "Si-like" processes will offer the possibility of competing with Si-Ge and C-MOS devices for mixed-mode circuits and mm-Wave array applications. The advantage comes from their superior breakdown voltages and ft/fmax while using processes and geometries only known so far by the Si industry. We are reviewing the performances of these devices developed under the DARPA NEXT program at TriQuint and other companies (HRL). At TriQuint, 30nm self-aligned gate InAlN/AlN/GaN devices achieved simultaneous fT/fmax of 359/347GHz. Thanks to their reduced geometry, these devices make excellent low-voltage RF devices. We published excellent performances at 10GHz with up to 67-69% PAE at 6V bias and 30GHz with up to 14.4dB associated gain and 2.6W/mm, 39.6% PAE at 8V bias. The Noise Figure of these devices at 10GHz was ~0.25dB with 3V drain bias. HRL has demonstrated fT/fmax as high as 454/444GHz at Vd=3V with a 20nm gate self-aligned device. It is tempting to envision a GaN-on-Si technology based on such devices where a fabrication process fully compatible with a Si foundry would allow the use of 8" wafers but more importantly the use of a large number of interconnect layers with micron and sub-micron geometries, both unknown to the III-V world. Preliminary work has been reported by Raytheon with GaN transistors on a 200 mm GaN-on-Si wafer (grown by MBE) fabricated with Au free metallurgy.
下一代电子GaN
我们报告了新一代GaN器件的发展及其性能。这种基于“类硅”工艺的新型E/D技术将为混合模式电路和毫米波阵列应用提供与Si-Ge和C-MOS器件竞争的可能性。其优势在于其优越的击穿电压和ft/fmax,同时使用迄今为止仅为Si行业所知的工艺和几何形状。我们正在评估TriQuint和其他公司(HRL)在DARPA NEXT项目下开发的这些设备的性能。在TriQuint, 30nm自对准栅InAlN/AlN/GaN器件同时实现了359/347GHz的fT/fmax。由于其简化的几何形状,这些器件是优秀的低压射频器件。我们公布了在10GHz和30GHz下的优异性能,在6V偏置下PAE高达67-69%,在8V偏置下相关增益高达14.4dB和2.6W/mm, PAE为39.6%。这些器件在10GHz时的噪声系数为~0.25dB,漏极偏置为3V。HRL已经用20nm栅自对准器件证明了在Vd=3V时fT/fmax高达454/444GHz。设想一种基于这种器件的GaN-on-Si技术是很诱人的,在这种器件上,与硅铸造厂完全兼容的制造工艺将允许使用8英寸晶圆,但更重要的是使用大量微米和亚微米几何形状的互连层,这两种结构都是III-V世界所未知的。雷声公司已经报道了在无金冶金法制造的200毫米GaN-on- si晶片上(由MBE生长)GaN晶体管的初步工作。
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