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Proceedings of the 2000 Third IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.00TH8474)最新文献

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Probe detectors for mapping manufacturing defects 用于绘制制造缺陷的探针探测器
Proceedings of the 2000 Third IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.00TH8474) Pub Date : 2000-03-15 DOI: 10.1109/ICCDCS.2000.869855
A. Zanchi, F. Zappa, M. Ghioni, A. Giudice, A. P. Morrison, V.S. Sinnis
{"title":"Probe detectors for mapping manufacturing defects","authors":"A. Zanchi, F. Zappa, M. Ghioni, A. Giudice, A. P. Morrison, V.S. Sinnis","doi":"10.1109/ICCDCS.2000.869855","DOIUrl":"https://doi.org/10.1109/ICCDCS.2000.869855","url":null,"abstract":"The process-dependent defectivity of p-n junctions was investigated through the measurement of the avalanche triggering rate of single-photon avalanche diodes used as process probes. A nonlinear dependence of the ignition rate with the area of circular junctions is reported, which can be ascribed to a nonuniform density of the thermal generation centers, due to gettering. This has been verified by means of microscopic inspection and comparison with other available data. Technological hints are finally derived to counteract this nonuniformity.","PeriodicalId":301003,"journal":{"name":"Proceedings of the 2000 Third IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.00TH8474)","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-03-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131132468","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
A macro-model-based MOSFET simulator 基于宏模型的MOSFET模拟器
Proceedings of the 2000 Third IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.00TH8474) Pub Date : 2000-03-15 DOI: 10.1109/ICCDCS.2000.869848
R. Rodriguez-T, E. Gutiérrez-D., L.A. Sarmiento-R
{"title":"A macro-model-based MOSFET simulator","authors":"R. Rodriguez-T, E. Gutiérrez-D., L.A. Sarmiento-R","doi":"10.1109/ICCDCS.2000.869848","DOIUrl":"https://doi.org/10.1109/ICCDCS.2000.869848","url":null,"abstract":"A device simulator, capable of handling general symbolic expressions, has been developed to simulate an LDD MOSFET under the Maple V release 3 environment. This simulator has both electrical and technological parameters as input variables, as well as the option to choose among different models for the carrier mobility. Pure analytical expressions are used for computing the drain current. This two-dimensional simulator has important features, like; position- and bias-dependent carrier mobility. Second order effects in the LDD region can be considered for the calculation of the bias-dependent series resistance. The simulator allows the user to manipulate any variable to investigate the effect of changing some of the technological parameters on the model of his/her election.","PeriodicalId":301003,"journal":{"name":"Proceedings of the 2000 Third IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.00TH8474)","volume":"85 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-03-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121646719","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Versatile multistandard digital TV encoder based on programmable hardware (CPLD) 基于可编程硬件(CPLD)的通用多标准数字电视编码器
Proceedings of the 2000 Third IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.00TH8474) Pub Date : 2000-03-15 DOI: 10.1109/ICCDCS.2000.869887
S. W. Mondwurf
{"title":"Versatile multistandard digital TV encoder based on programmable hardware (CPLD)","authors":"S. W. Mondwurf","doi":"10.1109/ICCDCS.2000.869887","DOIUrl":"https://doi.org/10.1109/ICCDCS.2000.869887","url":null,"abstract":"After giving a description of the three underlying standards of the digital video broadcasting system (DVB-S: satellite, DVB-C: cable and DVB-T: terrestrial), this paper discusses the synergy effects, which can be used to design a versatile multistandard digital television encoder with minimum hardware requirements. The paper shows the implementation possibilities of the signal-processing algorithms in Complex Programmable Logic Devices (CPLDs) for the example of a highly integrated digital TV encoder, which has been realized at the Chair of Communications Technology for measurement purposes.","PeriodicalId":301003,"journal":{"name":"Proceedings of the 2000 Third IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.00TH8474)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-03-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115843746","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
A method for FIR filter design based on quantization and PI technique 一种基于量化和PI技术的FIR滤波器设计方法
Proceedings of the 2000 Third IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.00TH8474) Pub Date : 2000-03-15 DOI: 10.1109/ICCDCS.2000.869870
G. Jovanovic-Dolecek, G. E. Flores-Verdad
{"title":"A method for FIR filter design based on quantization and PI technique","authors":"G. Jovanovic-Dolecek, G. E. Flores-Verdad","doi":"10.1109/ICCDCS.2000.869870","DOIUrl":"https://doi.org/10.1109/ICCDCS.2000.869870","url":null,"abstract":"This paper presents a method for narrow-band filter design based on the quantization of the coefficients of a prototype filter and the pipelining/interleaving (PI) technique. The proposed method leads to a saving in the number of multipliers, which increases with reduction of the transition width.","PeriodicalId":301003,"journal":{"name":"Proceedings of the 2000 Third IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.00TH8474)","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-03-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125049696","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Base dopant outdiffusion in SiGe heterojunction bipolar transistors SiGe异质结双极晶体管中基底掺杂物的外扩散
Proceedings of the 2000 Third IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.00TH8474) Pub Date : 2000-03-15 DOI: 10.1109/ICCDCS.2000.869836
A. Gruhle, H. Kibbel, U. Konig
{"title":"Base dopant outdiffusion in SiGe heterojunction bipolar transistors","authors":"A. Gruhle, H. Kibbel, U. Konig","doi":"10.1109/ICCDCS.2000.869836","DOIUrl":"https://doi.org/10.1109/ICCDCS.2000.869836","url":null,"abstract":"Outdiffusion of the base dopant into the emitter and collector of SiGe heterojunction bipolar transistors (HBTs) is known to seriously degrade device performance. This can be avoided by introducing undoped spacer layers, the thickness of which is usually determined empirically. This paper presents for the first time a quantitative analysis of the base dopant diffusion. The result is a graph from which the necessary minimum undoped spacer thickness can be determined depending on the base doping level and the given fabrication related thermal budget. Several fabricated HBTs with different spacer thicknesses were submitted to RTA anneals and the outdiffusion was determined experimentally. By comparison with the predicted data the diffusion constant of boron in strained SiGe layers can be determined. First results indicate that the boron diffusion in highly doped SiGe is almost an order of magnitude lower than expected.","PeriodicalId":301003,"journal":{"name":"Proceedings of the 2000 Third IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.00TH8474)","volume":"76 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-03-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126206667","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Hydrodynamic simulation of MESFET's using the least-squares finite element method 用最小二乘有限元法模拟MESFET的流体动力学
Proceedings of the 2000 Third IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.00TH8474) Pub Date : 2000-03-15 DOI: 10.1109/ICCDCS.2000.869835
Min Shen, M. Cheng
{"title":"Hydrodynamic simulation of MESFET's using the least-squares finite element method","authors":"Min Shen, M. Cheng","doi":"10.1109/ICCDCS.2000.869835","DOIUrl":"https://doi.org/10.1109/ICCDCS.2000.869835","url":null,"abstract":"A least-squares finite element method is developed for the 2D hydrodynamic simulation of semiconductor devices. The hydrodynamic device equations coupled with the Poisson equation are formulated as one unified equation system in this least squares finite element scheme. The developed method is applied to simulation of a 2D MESFET with a 0.2 /spl mu/m gate to demonstrate its capability of handling the large gradients of variables and discontinuities of the boundary conditions.","PeriodicalId":301003,"journal":{"name":"Proceedings of the 2000 Third IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.00TH8474)","volume":"88 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-03-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116014968","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Effects of tuner IQ imbalance on multicarrier-modulation systems 调谐器IQ失衡对多载波调制系统的影响
Proceedings of the 2000 Third IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.00TH8474) Pub Date : 2000-03-15 DOI: 10.1109/ICCDCS.2000.869880
M. Buchholz, Andreas Schuched, R. Hasholzner
{"title":"Effects of tuner IQ imbalance on multicarrier-modulation systems","authors":"M. Buchholz, Andreas Schuched, R. Hasholzner","doi":"10.1109/ICCDCS.2000.869880","DOIUrl":"https://doi.org/10.1109/ICCDCS.2000.869880","url":null,"abstract":"After giving a short description of the underlying principles of orthogonal frequency division multiplexing (OFDM) as a representative of a multicarrier modulation (MCM) system, this paper sets the main emphasis on investigating the effects of IQ imbalance caused by the analog signal processing in the tuner. A mathematical description of the resulting distortions is given. Special attention is paid to the description in the frequency domain. This is the prevailing level of digital signal processing in OFDM receivers to extract useful information from the received signal. An OFDM 64 QAM (quadrature amplitude modulation) transmission chain according to the European DVB-T (terrestrial digital video broadcasting) standard has been simulated in order to evaluate the impact of the tuner imperfections on the constellation diagram and the bit-error rate (BER). In the framework of the DVB-T system possible strategies to equalize these imperfections are briefly suggested.","PeriodicalId":301003,"journal":{"name":"Proceedings of the 2000 Third IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.00TH8474)","volume":"62 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-03-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127032329","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 24
The voltage feed of a three-dimensional structure and the far field pattern, related by a single operator 三维结构的电压馈送和远场图形，由单个算子关联
Proceedings of the 2000 Third IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.00TH8474) Pub Date : 2000-03-15 DOI: 10.1109/ICCDCS.2000.869879
A. Casimiro
{"title":"The voltage feed of a three-dimensional structure and the far field pattern, related by a single operator","authors":"A. Casimiro","doi":"10.1109/ICCDCS.2000.869879","DOIUrl":"https://doi.org/10.1109/ICCDCS.2000.869879","url":null,"abstract":"Presents a circuit type approach for the relation between a three dimensional radiating antenna or array and its far field radiation pattern, using only one matrix to connect directly the feed distribution and the far field pattern. With this procedure not only the far field radiation pattern calculations for different feed configurations are made much more easy than the usual two step procedure, but also it is possible to perform the synthesis, a situation that is not present in the classical approach. This was made possible by applying the digital signal processing techniques to deal with the radiation pattern of antennas or arrays.","PeriodicalId":301003,"journal":{"name":"Proceedings of the 2000 Third IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.00TH8474)","volume":"2010 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-03-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123814133","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Hot-carrier luminescence measurements by means of laser scanning microscopy 激光扫描显微镜热载流子发光测量
Proceedings of the 2000 Third IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.00TH8474) Pub Date : 2000-03-15 DOI: 10.1109/ICCDCS.2000.869857
R. Zappa, F. Zappa, M. Ghioni, U. Drodofsky
{"title":"Hot-carrier luminescence measurements by means of laser scanning microscopy","authors":"R. Zappa, F. Zappa, M. Ghioni, U. Drodofsky","doi":"10.1109/ICCDCS.2000.869857","DOIUrl":"https://doi.org/10.1109/ICCDCS.2000.869857","url":null,"abstract":"We employed for the first time solid-state single photon avalanche detectors (SPADs) in a laser scanning microscope (LSM). These devices led to an improvement of the LSM performances in the inspection of microelectronic devices and circuits, enhancing the obtainable depth discrimination and contrast of the final image. Thanks to the high sensitivity of SPAD devices, it was also possible to envisage an innovative application of LSM for measuring the weak visible and near-infrared luminescence emitted by microelectronic devices.","PeriodicalId":301003,"journal":{"name":"Proceedings of the 2000 Third IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.00TH8474)","volume":"30 5","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-03-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132606288","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A CMOS eddy current sensor for microsystems 微系统CMOS涡流传感器
Proceedings of the 2000 Third IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.00TH8474) Pub Date : 2000-03-15 DOI: 10.1109/ICCDCS.2000.869859
J. Gómez, D. Estève, J. Simonne
{"title":"A CMOS eddy current sensor for microsystems","authors":"J. Gómez, D. Estève, J. Simonne","doi":"10.1109/ICCDCS.2000.869859","DOIUrl":"https://doi.org/10.1109/ICCDCS.2000.869859","url":null,"abstract":"This papers reports our contribution to the design of an eddy current sensor. The objective of this study is to conceive an Eddy current electromagnetic sensor in the area of the Nondestructive Testing. The sensor is integrated in a CMOS technology with an operational amplifier in the same substrate. A microsystem integrates the CMOS eddy current sensor that is used to detect cracks and irregularities of metallic targets to make a fast and reliable internal inspection.","PeriodicalId":301003,"journal":{"name":"Proceedings of the 2000 Third IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.00TH8474)","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-03-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122454005","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
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