Yuhua Cheng, Chih-Hung Chen, C. Enz, M. Matloubian, M. Deen
{"title":"MOSFET modeling for RF circuit design","authors":"Yuhua Cheng, Chih-Hung Chen, C. Enz, M. Matloubian, M. Deen","doi":"10.1109/ICCDCS.2000.869831","DOIUrl":"https://doi.org/10.1109/ICCDCS.2000.869831","url":null,"abstract":"In this paper, we discuss some important issues in MOSFET modeling for radio-frequency (RF) integrated-circuit (IC) design. We start with the introduction of the basics of RF modeling. A simple sub-circuit model is presented with comparisons of the data for both y parameter and f/sub T/ characteristics. Good model accuracy is achieved against the measurements for a 0.25 /spl mu/m RF CMOS technology. The high frequency (HF) noise modeling issues are also discussed. A methodology to extract the channel thermal noise of MOSFETs from the HF noise measurements is presented and the concept of induced-gate noise is discussed briefly. The results of different noise modeling approaches are also given with the comparison of the measured data, with which the prediction capability of the HF noise behavior of any modeling approach can be examined.","PeriodicalId":301003,"journal":{"name":"Proceedings of the 2000 Third IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.00TH8474)","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-03-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127871979","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Developing applications for digital TV using the M-DTV/sup TM/ platform","authors":"V. Grimblatt, G. León, P. Straub, H. Anderson","doi":"10.1109/ICCDCS.2000.869884","DOIUrl":"https://doi.org/10.1109/ICCDCS.2000.869884","url":null,"abstract":"The television business is changing. In the US for example, the networks are already broadcasting digital TV and in the year 2006 there will be no more analog TV programs. This new type of TV transmission has created new technical challenges like MPEG decoding that need new and complex hardware/software systems. There are also new opportunities because of the capabilities of the new digital television technologies, like adding an Electronic Program Guide to TV sets. To be successful in this new TV era it is important to have TV hardware and software infrastructure that will do all of the necessary functions to control a TV set. New applications will be added on top of this infrastructure. Motorola has developed the M-DTV/sup TM/ platform, a system that includes all necessary hardware and software to allow one to build a digital TV set with new applications. The paper presents the M-DTV/sup TM/ platform and indicates how applications can be developed for the platform.","PeriodicalId":301003,"journal":{"name":"Proceedings of the 2000 Third IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.00TH8474)","volume":"119 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-03-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116077133","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"A new model for aluminum interconnect fusing caused by ESD","authors":"J. Vinson, J. Liou","doi":"10.1109/ICCDCS.2000.869829","DOIUrl":"https://doi.org/10.1109/ICCDCS.2000.869829","url":null,"abstract":"Electrical Overstress (EOS) in semiconductor devices accounts for a large number of the failures that occur in both the vendor's facility as well as in the field. Improvements in the circuit design and layout require techniques that accurately model this damage. This paper provides the details necessary to model fusing of aluminum interconnect caused by electrostatic discharge. It also highlights the important material properties necessary to improve a circuit's response to EOS or ESD events.","PeriodicalId":301003,"journal":{"name":"Proceedings of the 2000 Third IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.00TH8474)","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-03-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122484564","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Multi-discipline, multi-scale modeling of microsystems: an overview","authors":"A. Wild","doi":"10.1109/ICCDCS.2000.869823","DOIUrl":"https://doi.org/10.1109/ICCDCS.2000.869823","url":null,"abstract":"Increasing integration levels are the driving force towards systems-on-a-chip. Designing microsystems is an emerging discipline facing specific challenges, resulting from the heterogeneous nature of the components to be integrated. A successful model and a useful simulation must be able to encompass several disciplines, and to adequately describe the coupling among heterogeneous phenomena. The functionality often depends on phenomena taking place at largely different scales, both in space and in time, making multi-scale simulation a necessity. Adequate multi-scale, multi-discipline modeling is a pre-requisite for closed loop optimizers, automating microsystems design. This paper contains an overview of some recent developments in this area.","PeriodicalId":301003,"journal":{"name":"Proceedings of the 2000 Third IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.00TH8474)","volume":"170 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-03-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122642538","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Post-breakdown conduction in sub-5 nm gate oxides in MOS devices","authors":"E. Miranda, J. Suñé","doi":"10.1109/ICCDCS.2000.869838","DOIUrl":"https://doi.org/10.1109/ICCDCS.2000.869838","url":null,"abstract":"We investigate the electron transport through broken down ultrathin (<5 nm) SiO/sub 2/ films in metal-oxide-semiconductor structures. We present experimental and theoretical results which demonstrate that the conduction properties of such systems are essentially governed by the cross-sectional area of the constriction connecting gate and substrate. It is shown that the hard or catastrophic breakdown mode exhibits conductance plateaus of the order of the quantum unit G/sub 0/=2e/sup 2//h (/spl sime/12.9 k/spl Omega//sup -1/), as found in quantum point contacts. On the other hand, the soft breakdown mode depends exponentially on the applied bias and can be understood in terms of tunneling through the potential barrier associated with the lower electron transversal state at the narrowmost part of the constriction.","PeriodicalId":301003,"journal":{"name":"Proceedings of the 2000 Third IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.00TH8474)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-03-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123229897","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"A total system solution for controlling low-cost television receivers","authors":"N. Sabbatini, V. Aguilera, P. Straub","doi":"10.1109/ICCDCS.2000.869885","DOIUrl":"https://doi.org/10.1109/ICCDCS.2000.869885","url":null,"abstract":"This paper presents the design and implementation of a complete solution for controlling low-cost television receivers. The solution encompasses an 8-bit microcontroller for TV/VCR applications and a package of configurable and modular software. The microcontroller supports on-screen display, closed caption and I/sup 2/C communication. The software package developed comprises the software for controlling the functions of a low-lost television receiver and the software tools designed to aid and speed up the development of the control software.","PeriodicalId":301003,"journal":{"name":"Proceedings of the 2000 Third IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.00TH8474)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-03-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126484891","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
J. Aller, J. Restrepo, A. Bueno, T. Paga, V. Guzmán, M. Giménez
{"title":"Sensorless speed control of the induction machine combining field oriented method and DTC","authors":"J. Aller, J. Restrepo, A. Bueno, T. Paga, V. Guzmán, M. Giménez","doi":"10.1109/ICCDCS.2000.869864","DOIUrl":"https://doi.org/10.1109/ICCDCS.2000.869864","url":null,"abstract":"A direct torque control (DTC) scheme for an induction machine is presented. The rotor speed estimation is performed using the oriented field model. Time-frequency spectral methods are used for accurate speed estimation, using the stator current information. Combining these estimation techniques, a precise T/sub r/ adaptation is achieved in real time. The proposed method reduces the parameter dependence of the induction machine model in the controller, and removes the need for a speed sensor in the mechanical shaft. The dynamic control performance achieved with this technique is comparable to that obtained using optical encoders.","PeriodicalId":301003,"journal":{"name":"Proceedings of the 2000 Third IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.00TH8474)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-03-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131242960","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"An initial overdriven sense amplifier for low voltage DRAMs","authors":"Jyi-Tsong Lin, Cheng-Chih Hsu","doi":"10.1109/ICCDCS.2000.869803","DOIUrl":"https://doi.org/10.1109/ICCDCS.2000.869803","url":null,"abstract":"A high performance sense amplifier that provides a large initial driving current is proposed in this paper. In order to increase initial driving current of the conventional sense amplifier, the voltage levels of power sources are boosted by using a bootstrap technique. The sensing speed of the proposed sense amplifier is faster than that of the conventional one due to the large voltage difference between gate and source of the sensing transistor in the initial stage. The simulation result shows that a 5.6 ns (40%) sensing time is reduced compared to the conventional sense amplifier when the proposed sense amplifier is applied to sense data in 1.5 V supply voltage. In addition, the conventional sense amplifier fails to read data out in 1.3 V supply voltage whereas, the proposed sense amplifier still works under the same condition. These indicate that the proposed sense amplifier is suitable for application in low voltage DRAMs.","PeriodicalId":301003,"journal":{"name":"Proceedings of the 2000 Third IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.00TH8474)","volume":"148 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-03-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123736385","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"A gestural control for a nonlinear sound synthesis method","authors":"F. Damiani, J. Manzolli, P. J. Tatsch, A. Maia","doi":"10.1109/ICCDCS.2000.869873","DOIUrl":"https://doi.org/10.1109/ICCDCS.2000.869873","url":null,"abstract":"This paper presents a new method for sound synthesis based upon nonlinear dynamics. The procedure is compact and can be interactively controlled with gesture interfaces. The sounds thus synthesized have dynamic characteristics and rich spectra. It is an economical method, for it uses only a cyclic buffer to control the audio output and a nonlinear map to generate the waveforms.","PeriodicalId":301003,"journal":{"name":"Proceedings of the 2000 Third IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.00TH8474)","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-03-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115313550","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"On chip crosstalk characterization on deep submicron buses","authors":"S. Delmas Bendhia, F. Caignet, E. Sicard","doi":"10.1109/ICCDCS.2000.869815","DOIUrl":"https://doi.org/10.1109/ICCDCS.2000.869815","url":null,"abstract":"This paper presents the experimental measurement of crosstalk effects in 0.18 /spl mu/m CMOS technology. Based on an on-chip measurement method, we characterize crosstalk on typical interconnect buses for different length of coupled lines, and deduce guidelines concerning critical coupled line length. The effect of the number of aggressors switching simultaneously, on the victim line, is also analyzed.","PeriodicalId":301003,"journal":{"name":"Proceedings of the 2000 Third IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.00TH8474)","volume":"48 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-03-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123319522","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}