用最小二乘有限元法模拟MESFET的流体动力学

Proceedings of the 2000 Third IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.00TH8474) Pub Date : 2000-03-15 DOI:10.1109/ICCDCS.2000.869835

Min Shen, M. Cheng

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引用次数: 0

摘要

建立了半导体器件二维流体动力学模拟的最小二乘有限元方法。在最小二乘有限元格式中，将流体动力装置方程与泊松方程耦合成一个统一的方程组。将该方法应用于具有0.2 /spl mu/m栅极的二维MESFET仿真，验证了其处理大梯度变量和边界条件不连续的能力。

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Hydrodynamic simulation of MESFET's using the least-squares finite element method

A least-squares finite element method is developed for the 2D hydrodynamic simulation of semiconductor devices. The hydrodynamic device equations coupled with the Poisson equation are formulated as one unified equation system in this least squares finite element scheme. The developed method is applied to simulation of a 2D MESFET with a 0.2 /spl mu/m gate to demonstrate its capability of handling the large gradients of variables and discontinuities of the boundary conditions.

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Proceedings of the 2000 Third IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.00TH8474)

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