{"title":"基于宏模型的MOSFET模拟器","authors":"R. Rodriguez-T, E. Gutiérrez-D., L.A. Sarmiento-R","doi":"10.1109/ICCDCS.2000.869848","DOIUrl":null,"url":null,"abstract":"A device simulator, capable of handling general symbolic expressions, has been developed to simulate an LDD MOSFET under the Maple V release 3 environment. This simulator has both electrical and technological parameters as input variables, as well as the option to choose among different models for the carrier mobility. Pure analytical expressions are used for computing the drain current. This two-dimensional simulator has important features, like; position- and bias-dependent carrier mobility. Second order effects in the LDD region can be considered for the calculation of the bias-dependent series resistance. The simulator allows the user to manipulate any variable to investigate the effect of changing some of the technological parameters on the model of his/her election.","PeriodicalId":301003,"journal":{"name":"Proceedings of the 2000 Third IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.00TH8474)","volume":"85 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-03-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A macro-model-based MOSFET simulator\",\"authors\":\"R. Rodriguez-T, E. Gutiérrez-D., L.A. Sarmiento-R\",\"doi\":\"10.1109/ICCDCS.2000.869848\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A device simulator, capable of handling general symbolic expressions, has been developed to simulate an LDD MOSFET under the Maple V release 3 environment. This simulator has both electrical and technological parameters as input variables, as well as the option to choose among different models for the carrier mobility. Pure analytical expressions are used for computing the drain current. This two-dimensional simulator has important features, like; position- and bias-dependent carrier mobility. Second order effects in the LDD region can be considered for the calculation of the bias-dependent series resistance. The simulator allows the user to manipulate any variable to investigate the effect of changing some of the technological parameters on the model of his/her election.\",\"PeriodicalId\":301003,\"journal\":{\"name\":\"Proceedings of the 2000 Third IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.00TH8474)\",\"volume\":\"85 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2000-03-15\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the 2000 Third IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.00TH8474)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICCDCS.2000.869848\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 2000 Third IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.00TH8474)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICCDCS.2000.869848","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
摘要
在Maple V release 3环境下,开发了一个能够处理一般符号表达式的器件模拟器来模拟LDD MOSFET。该模拟器具有电气和技术参数作为输入变量,以及在不同模型中选择载体移动性的选项。用纯解析表达式计算漏极电流。这个二维模拟器具有重要的功能,比如;位置和偏置相关的载流子迁移率。在计算偏置相关的串联电阻时,可以考虑LDD区域的二阶效应。模拟器允许用户操纵任何变量来研究改变一些技术参数对他/她选择的模型的影响。
A device simulator, capable of handling general symbolic expressions, has been developed to simulate an LDD MOSFET under the Maple V release 3 environment. This simulator has both electrical and technological parameters as input variables, as well as the option to choose among different models for the carrier mobility. Pure analytical expressions are used for computing the drain current. This two-dimensional simulator has important features, like; position- and bias-dependent carrier mobility. Second order effects in the LDD region can be considered for the calculation of the bias-dependent series resistance. The simulator allows the user to manipulate any variable to investigate the effect of changing some of the technological parameters on the model of his/her election.