Hydrodynamic simulation of MESFET's using the least-squares finite element method

Abstract

A least-squares finite element method is developed for the 2D hydrodynamic simulation of semiconductor devices. The hydrodynamic device equations coupled with the Poisson equation are formulated as one unified equation system in this least squares finite element scheme. The developed method is applied to simulation of a 2D MESFET with a 0.2 /spl mu/m gate to demonstrate its capability of handling the large gradients of variables and discontinuities of the boundary conditions.