Hot-carrier luminescence measurements by means of laser scanning microscopy

Abstract

We employed for the first time solid-state single photon avalanche detectors (SPADs) in a laser scanning microscope (LSM). These devices led to an improvement of the LSM performances in the inspection of microelectronic devices and circuits, enhancing the obtainable depth discrimination and contrast of the final image. Thanks to the high sensitivity of SPAD devices, it was also possible to envisage an innovative application of LSM for measuring the weak visible and near-infrared luminescence emitted by microelectronic devices.