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CMOS RF: no longer an oxymoron CMOS RF:不再是一个矛盾修饰法
GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 19th Annual Technical Digest 1997 Pub Date : 1997-10-12 DOI: 10.1109/GAAS.1997.628279
T. Lee
{"title":"CMOS RF: no longer an oxymoron","authors":"T. Lee","doi":"10.1109/GAAS.1997.628279","DOIUrl":"https://doi.org/10.1109/GAAS.1997.628279","url":null,"abstract":"Peak CMOS f/sub T/'s are now in excess of 30 GHz and double every three years. That raw device speed is supplemented by recently developed passive elements, such as the lateral flux capacitor and the shielded spiral inductor, in which the lossy substrate is made much less relevant without requiring special processing steps. Device F/sub min/ is typically under 0.5 dB at 1-2 GHz, and a better understanding of broadband MOSFET noise has shown how to minimize amplifier noise figure within a specified power budget. Finally, a new understanding of phase noise has shown that satisfaction of previously unappreciated symmetry criteria can suppress greatly (e.g., by factors of 5-10 or more) the upconversion of 1/f device noise into close-in phase noise.","PeriodicalId":299287,"journal":{"name":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 19th Annual Technical Digest 1997","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-10-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120847486","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 31
GaAs ICs for 10 Gb/s ATM switching 用于10gb /s ATM交换的GaAs ic
GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 19th Annual Technical Digest 1997 Pub Date : 1997-10-12 DOI: 10.1109/GAAS.1997.628247
A. Núñez, R. Sarmiento, R. Esper-Chaín, J. Jakobsen, J. Montiel-Nelson, J. López, V. Armas, F. Tobajas
{"title":"GaAs ICs for 10 Gb/s ATM switching","authors":"A. Núñez, R. Sarmiento, R. Esper-Chaín, J. Jakobsen, J. Montiel-Nelson, J. López, V. Armas, F. Tobajas","doi":"10.1109/GAAS.1997.628247","DOIUrl":"https://doi.org/10.1109/GAAS.1997.628247","url":null,"abstract":"This paper reports on work done by project GARDEN under EU ESPRIT Research Programme in the past three years for developing ATM line units and ATM switch fabric operating at 2.5 Gb/s, and ongoing work for system upgrading to 10 Gb/s operation. A circuit of each type of unit is presented. This project has required the detailed specification of the system architecture, partitioning, interconnection, and technology mapping of the ATM functions into different chips, the development of full custom layout methodology and tools for MESFET HGaAs III, IV and HEMT technologies, and the actual design, fabrication and test of a set of IC's performing physical layer, ATM layer, buffering and switching functions.","PeriodicalId":299287,"journal":{"name":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 19th Annual Technical Digest 1997","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-10-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129549078","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
High speed AlGaAs/GaAs HBT circuits for up to 40 Gb/s optical communication 高速AlGaAs/GaAs HBT电路，可实现高达40 Gb/s的光通信
GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 19th Annual Technical Digest 1997 Pub Date : 1997-10-12 DOI: 10.1109/GAAS.1997.628271
K. Runge, P. Zampardi, R. Pierson, P. Thomas, S. Beccue, R. Yu, K. Wang
{"title":"High speed AlGaAs/GaAs HBT circuits for up to 40 Gb/s optical communication","authors":"K. Runge, P. Zampardi, R. Pierson, P. Thomas, S. Beccue, R. Yu, K. Wang","doi":"10.1109/GAAS.1997.628271","DOIUrl":"https://doi.org/10.1109/GAAS.1997.628271","url":null,"abstract":"High speed circuits such as multiplexer/demultiplexers, variable-gain limiting amplifiers (VGAs), and transimpedance amplifiers operating at high bit rates (>30 Gb/s) are required for the realization of high performance lightwave systems using TDM or WDM. We have demonstrated 40 Gb/s multiplexers, 30 Gb/s data and clock regeneration, DC-26 GHz VGAs, and transimpedance amplifiers with 3 dB bandwidth in excess of 20 GHz for use in such systems using a manufacturable hybrid digital/microwave HBT process.","PeriodicalId":299287,"journal":{"name":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 19th Annual Technical Digest 1997","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-10-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132662783","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 13
GaAs in the broadband infrastructure 宽带基础设施中的GaAs
GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 19th Annual Technical Digest 1997 Pub Date : 1997-10-12 DOI: 10.1109/GAAS.1997.628226
J. Jakobsen
{"title":"GaAs in the broadband infrastructure","authors":"J. Jakobsen","doi":"10.1109/GAAS.1997.628226","DOIUrl":"https://doi.org/10.1109/GAAS.1997.628226","url":null,"abstract":"In this paper the broadband infrastructure is analyzed with emphasis on broadband access and broadband switching. Broadband access will mainly be based on the existing CATV and twisted pair infrastructures, whereas radio will be used mainly for mobile users. Broadband switching will be dominated by ATM technology. GaAs and other III-V components are naturally applied in optical and RF front-ends of both switches and terminal equipment. High speed switching can be implemented in CMOS, but GaAs has the potential to offer higher levels of integration resulting in system level better reliability, lower cost and lower power consumption.","PeriodicalId":299287,"journal":{"name":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 19th Annual Technical Digest 1997","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-10-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115176993","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
High power modulator driver ICs up to 30 Gb/s with AlGaAs/GaAs HEMTs 高功率调制器驱动ic高达30 Gb/s与AlGaAs/GaAs hemt
GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 19th Annual Technical Digest 1997 Pub Date : 1997-10-12 DOI: 10.1109/GAAS.1997.628274
Z. Lao, A. Thiede, U. Nowotny, M. Schlechtweg, V. Hurm, W. Bronner, J. Hornung, M. Rieger-Motzer, G. Kaufel, K. Kohler, A. Hulsmann
{"title":"High power modulator driver ICs up to 30 Gb/s with AlGaAs/GaAs HEMTs","authors":"Z. Lao, A. Thiede, U. Nowotny, M. Schlechtweg, V. Hurm, W. Bronner, J. Hornung, M. Rieger-Motzer, G. Kaufel, K. Kohler, A. Hulsmann","doi":"10.1109/GAAS.1997.628274","DOIUrl":"https://doi.org/10.1109/GAAS.1997.628274","url":null,"abstract":"Two monolithic integrated transmitter circuits of a modulator driver and a modulator driver with a 2:1 multiplexer for high-speed optical-fiber links are presented. The ICs featuring differential configuration were fabricated in a 0.2 /spl mu/m gate-length enhancement and depletion HEMT technology with 60 GHz and 55 GHz f/sub T/. The modulator driver operates up to 25 Gb/s with an output voltage swing of 3.3 V/sub p-p/ at each output (corresponding to an internal current swing of 100 mA). The total voltage gain is 22 dB. The modulator driver with a integrated 2:1 multiplexer performs a data rate up to 30 Gb/s with an output voltage swing of 2.2 V/sub p-p/ at each output. Each circuit consumes 1.4 W power using a single supply voltage of -5 V.","PeriodicalId":299287,"journal":{"name":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 19th Annual Technical Digest 1997","volume":"36 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-10-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121960827","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 9
A high efficiency normally-off MODFET power MMIC for PHS operating under 3.0 V single-supply condition 用于小灵通在3.0 V单电源条件下工作的高效率常关MODFET功率MMIC
GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 19th Annual Technical Digest 1997 Pub Date : 1997-10-12 DOI: 10.1109/GAAS.1997.628232
T. Yokoyama, M. Nishijima, S. Yamamoto, M. Nishitsuji, K. Nishii, M. Nakayama, O. Ishikawa
{"title":"A high efficiency normally-off MODFET power MMIC for PHS operating under 3.0 V single-supply condition","authors":"T. Yokoyama, M. Nishijima, S. Yamamoto, M. Nishitsuji, K. Nishii, M. Nakayama, O. Ishikawa","doi":"10.1109/GAAS.1997.628232","DOIUrl":"https://doi.org/10.1109/GAAS.1997.628232","url":null,"abstract":"A normally-off MODFET power MMIC has been developed for 1.9 GHz Japanese Personal Handy-phone System (PHS). High power added efficiency (PAE) of 41.7% at the output power (P/sub out/) of 22.0 dBm has been achieved under 3.0 V single-supply condition. The operating current is only 127 mA and the adjacent channel leakage power (P/sub adj/) is -58.2 dBc. Three FETs with their matching circuits are integrated on a very small die (1.1 mm/sup 2/) of the MMIC.","PeriodicalId":299287,"journal":{"name":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 19th Annual Technical Digest 1997","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-10-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130075667","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 9
5 GHz /spl Sigma//spl Delta/ analog-to-digital converter with polarity alternating feedback comparator 5 GHz /spl Sigma//spl Delta/模数转换器，带极性交替反馈比较器
GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 19th Annual Technical Digest 1997 Pub Date : 1997-10-12 DOI: 10.1109/GAAS.1997.628245
T. Miyashita, A. Olmos, M. Nihei, Y. Watanabe
{"title":"5 GHz /spl Sigma//spl Delta/ analog-to-digital converter with polarity alternating feedback comparator","authors":"T. Miyashita, A. Olmos, M. Nihei, Y. Watanabe","doi":"10.1109/GAAS.1997.628245","DOIUrl":"https://doi.org/10.1109/GAAS.1997.628245","url":null,"abstract":"We designed and fabricated a 5 GHz oversampling, 100 MHz bandwidth continuous time second order /spl Sigma//spl Delta/ analog-to-digital converter (ADC) using 0.4-/spl mu/m InGaP/-InGaAs enhancement and depletion mode high electron mobility transistor (E/D HEMT) technology. We propose the polarity alternating feedback (PAF) technique for enhancing the sampling frequency and have applied it in the design of an ADC circuit. The fabricated ADC shows a signal-to-noise ratio (SNR) of 43 dB (7.3 bits) under a differential clock of 4.9 GHz with a power dissipation of 400 mW.","PeriodicalId":299287,"journal":{"name":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 19th Annual Technical Digest 1997","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-10-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129966753","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Design of the Tera MTA integrated circuits Tera MTA集成电路的设计
GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 19th Annual Technical Digest 1997 Pub Date : 1997-10-12 DOI: 10.1109/GAAS.1997.628228
M. Howard, A. Kopser
{"title":"Design of the Tera MTA integrated circuits","authors":"M. Howard, A. Kopser","doi":"10.1109/GAAS.1997.628228","DOIUrl":"https://doi.org/10.1109/GAAS.1997.628228","url":null,"abstract":"The Tera MTA (Multi-Threaded Architecture) computer system is a scalable shared memory multiprocessor implemented in semi-custom GaAs ICs. This paper gives an overview of attributes of the Tera MTA architecture that influenced the chip design. It then describes the IC technology selection, design methodology, and yield enhancements.","PeriodicalId":299287,"journal":{"name":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 19th Annual Technical Digest 1997","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-10-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123336067","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Long wavelength MSM-HEMT and PIN-HEMT photoreceivers grown on GaAs 在GaAs上生长的长波长MSM-HEMT和PIN-HEMT光电接收器
GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 19th Annual Technical Digest 1997 Pub Date : 1997-10-12 DOI: 10.1109/GAAS.1997.628268
V. Hurm, W. Benz, W. Bronner, T. Fink, T. Jakobus, G. Kaufel, K. Kohler, Z. Lao, A. Leven, M. Ludwig, C. Moglestue, B. Raynor, J. Rosenzweig, M. Schlechtweg, A. Thiede, S. Weisser
{"title":"Long wavelength MSM-HEMT and PIN-HEMT photoreceivers grown on GaAs","authors":"V. Hurm, W. Benz, W. Bronner, T. Fink, T. Jakobus, G. Kaufel, K. Kohler, Z. Lao, A. Leven, M. Ludwig, C. Moglestue, B. Raynor, J. Rosenzweig, M. Schlechtweg, A. Thiede, S. Weisser","doi":"10.1109/GAAS.1997.628268","DOIUrl":"https://doi.org/10.1109/GAAS.1997.628268","url":null,"abstract":"1.3 - 1.55μm wavelength 20 Gbit/s MSM-HEMT and 10 Gbit/s PIN-HEMT photoreceivers have been monolithically integrated on GaAs substrates using a 0.3 μm gate length AlGaAs/GaAs HEMT process. The In/sub 0.53/Ga/sub 0.47/As MSM and PIN photodiodes grown on GaAs have nearly identical characteristics to photodiodes grown on InP.","PeriodicalId":299287,"journal":{"name":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 19th Annual Technical Digest 1997","volume":"1976 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-10-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117181206","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
Bidirectional analog 8/spl times/8 switch matrix with large input signal and over 1 GHz bandwidth 双向模拟8/spl倍/8开关矩阵，大输入信号，带宽超过1ghz
GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 19th Annual Technical Digest 1997 Pub Date : 1997-10-12 DOI: 10.1109/GAAS.1997.628277
E. Sokolowska, G. Fortin, N. Belabbes, M. Gagnon, C. Roy, B. Kaminska
{"title":"Bidirectional analog 8/spl times/8 switch matrix with large input signal and over 1 GHz bandwidth","authors":"E. Sokolowska, G. Fortin, N. Belabbes, M. Gagnon, C. Roy, B. Kaminska","doi":"10.1109/GAAS.1997.628277","DOIUrl":"https://doi.org/10.1109/GAAS.1997.628277","url":null,"abstract":"A yield-performance optimized 8/spl times/8 GaAs MESFET analog switch matrix aimed at handling simultaneously electrical signals of mixed protocols was designed for local-area network (LAN) applications. The unique features of this circuit are large matrix dimensions combined with small insertion loss, high channel isolation, constant R/sub ON/, low interchannel crosstalk, large maximum input signal, and over 1 GHz bandwidth. The integration of a control logic results in the same functionality as CMOS matrices, while the frequency performance is that of a GaAs circuit. This paper presents the design details and tradeoffs and compares simulated and measured results.","PeriodicalId":299287,"journal":{"name":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 19th Annual Technical Digest 1997","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-10-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125989288","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
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