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GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 19th Annual Technical Digest 1997最新文献

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A packaged 3 GHz timing interface unit for a laser altimeter system 一种用于激光高度计系统的封装3ghz定时接口单元
GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 19th Annual Technical Digest 1997 Pub Date : 1997-10-12 DOI: 10.1109/GAAS.1997.628264
D. Jani, C.E. Chang, K. Wang
{"title":"A packaged 3 GHz timing interface unit for a laser altimeter system","authors":"D. Jani, C.E. Chang, K. Wang","doi":"10.1109/GAAS.1997.628264","DOIUrl":"https://doi.org/10.1109/GAAS.1997.628264","url":null,"abstract":"A Timing Interface Unit (TIU) integrated circuit is implemented in a Ft=45 GHz (Ft) AlGaAs/GaAs HBT process. The TIU was designed for a satellite based laser altimeter system with vertical resolution of 5 cms. The TIU performs two functions: (1) generate coarse count for the time-of-flight of the laser pulse; (2) retiming the return pulse with the clock for the return pulse digitizer and generate the return acknowledge. The TIU has 27-bit ripple counter with synchronous operation up to 5 GHz. The packaged IC was tested up to 3 GHz clock rates and 5 GHz on-wafer testing. The chip dissipates 1.3 W. The TIU IC has been integrated into a prototype data acquisition system developed for laser altimetry.","PeriodicalId":299287,"journal":{"name":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 19th Annual Technical Digest 1997","volume":"363 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-10-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125814258","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
InP/InGaAs HBT ICs for 40 Gbit/s optical transmission systems 用于40gbit /s光传输系统的InP/InGaAs HBT集成电路
GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 19th Annual Technical Digest 1997 Pub Date : 1997-10-12 DOI: 10.1109/GAAS.1997.628272
H. Suzuki, K. Watanabe, K. Ishikawa, H. Masuda, K. Ouchi, T. Tanoue, R. Takeyari
{"title":"InP/InGaAs HBT ICs for 40 Gbit/s optical transmission systems","authors":"H. Suzuki, K. Watanabe, K. Ishikawa, H. Masuda, K. Ouchi, T. Tanoue, R. Takeyari","doi":"10.1109/GAAS.1997.628272","DOIUrl":"https://doi.org/10.1109/GAAS.1997.628272","url":null,"abstract":"An IC chip set for 40 Gbit/s TDM optical transmission systems was designed and fabricated using an InP/InGaAs HBT technology. For digital ICs, a modulator driver, a D-type flip flop at 20 Gbit/s, and a 2:1 selector at 40 Gbit/s were fabricated. Also, three analog ICs were developed: the five-section cascode distributed amplifier which obtained a gain of 9.5 dB in the frequency range of 1-50 GHz, the 41.9 dB/spl Omega/ transimpedance amplifier which achieved more than 40 GHz bandwidth assuming 50 fF input capacitance for the photodetector, the two-stage differential amplifier which obtained a 7.5 dB gain with a bandwidth of 40 GHz.","PeriodicalId":299287,"journal":{"name":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 19th Annual Technical Digest 1997","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-10-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128754010","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 23
Device and process optimization for a low voltage enhancement mode power heterojunction FET for portable applications 用于便携式应用的低压增强模式功率异质结场效应管的器件和工艺优化
GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 19th Annual Technical Digest 1997 Pub Date : 1997-10-12 DOI: 10.1109/GAAS.1997.628236
J. Huang, E. Glass, J. Abrokwah, B. Bernhardt, M. Majerus, E. Spears, J. Parsey, D. Scheitlin, R. Droopad, L. Mills, K. Hawthorne, J. Blaugh
{"title":"Device and process optimization for a low voltage enhancement mode power heterojunction FET for portable applications","authors":"J. Huang, E. Glass, J. Abrokwah, B. Bernhardt, M. Majerus, E. Spears, J. Parsey, D. Scheitlin, R. Droopad, L. Mills, K. Hawthorne, J. Blaugh","doi":"10.1109/GAAS.1997.628236","DOIUrl":"https://doi.org/10.1109/GAAS.1997.628236","url":null,"abstract":"This paper describes a true enhancement mode RF power device with state-of-the-art performance operated at 3.5 Volts at 900 MHz. The performance was realized with a technology derived from the digital CGaAs/sup TM/ technology. The necessary device and process optimizations to adapt the digital technology for RF applications are discussed and results presented.","PeriodicalId":299287,"journal":{"name":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 19th Annual Technical Digest 1997","volume":"58 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-10-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114705647","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 13
AlGaAs/GaAs HBT reliability: dependence on material and correlation to baseband noise AlGaAs/GaAs HBT可靠性:依赖于材料和与基带噪声的相关性
GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 19th Annual Technical Digest 1997 Pub Date : 1997-10-12 DOI: 10.1109/GAAS.1997.628259
B. Bayraktaroglu, G. Dix, S. Mohammadi, D. Pavlidis
{"title":"AlGaAs/GaAs HBT reliability: dependence on material and correlation to baseband noise","authors":"B. Bayraktaroglu, G. Dix, S. Mohammadi, D. Pavlidis","doi":"10.1109/GAAS.1997.628259","DOIUrl":"https://doi.org/10.1109/GAAS.1997.628259","url":null,"abstract":"The long-term reliability of an AlGaAs/GaAs HBT was found to have a strong dependence on the starting epitaxial material. The measured and extrapolated lifetimes ranged from 10/sup 2/ to 10/sup 9/ hours with devices fabricated on wafers obtained from 3 different vendors. The low frequency baseband noise characteristics were used to identify the source and the nature of mechanisms that lead to current gain degradation.","PeriodicalId":299287,"journal":{"name":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 19th Annual Technical Digest 1997","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-10-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124384162","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
A InP DHBT technology for high bit-rate optical communications circuits 用于高比特率光通信电路的InP DHBT技术
GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 19th Annual Technical Digest 1997 Pub Date : 1997-10-12 DOI: 10.1109/GAAS.1997.628273
J. Godin, P. André, J. Benchimol, P. Desrousseaux, A. Duchenois, A. Konczykowska, P. Launay, M. Meghelli, M. Riet
{"title":"A InP DHBT technology for high bit-rate optical communications circuits","authors":"J. Godin, P. André, J. Benchimol, P. Desrousseaux, A. Duchenois, A. Konczykowska, P. Launay, M. Meghelli, M. Riet","doi":"10.1109/GAAS.1997.628273","DOIUrl":"https://doi.org/10.1109/GAAS.1997.628273","url":null,"abstract":"High bit-rate optical communication links require high performance circuits. This paper presents a InP Double Heterojunction HBT technology, and circuits fabricated with it: 40 Gbit/s MUX and DMUX, a 20 Gbit/s driver, a 30 Gbit/s selector-driver, a decision-decoding circuit for multilevel transmissions.","PeriodicalId":299287,"journal":{"name":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 19th Annual Technical Digest 1997","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-10-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121124965","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
A 1.4 watt Q-band GaAs PHEMT MMIC 一个1.4瓦q波段GaAs PHEMT MMIC
GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 19th Annual Technical Digest 1997 Pub Date : 1997-10-12 DOI: 10.1109/GAAS.1997.628287
S. Nash, A. Platzker, R. Wohlert, C. Liss
{"title":"A 1.4 watt Q-band GaAs PHEMT MMIC","authors":"S. Nash, A. Platzker, R. Wohlert, C. Liss","doi":"10.1109/GAAS.1997.628287","DOIUrl":"https://doi.org/10.1109/GAAS.1997.628287","url":null,"abstract":"A Q-band three-stage monolithic GaAs PHEMT amplifier with an output power of 1.4 W from 42 to 45 GHz has been developed. Power added efficiency between 14 and 18% with an associated gain of 12.5 dB was measured when biased at Vds=6.0 V and Idsq=1000 mA. When biased at Vds=5.0 V, Idsq=1000 mA this amplifier has demonstrated over 1.1 W of output power with an associated gain of 11.5 to 12.5 dB from 41 to 46 GHz. Similar performances were also measured when the design was transferred from 2 mil thick 3 inch diameter pilot process line to the 2 mil thick, 4 inch diameter manufacturing process line.","PeriodicalId":299287,"journal":{"name":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 19th Annual Technical Digest 1997","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-10-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134398616","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
GaAs technology rides the wireless wave GaAs技术利用无线电波
GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 19th Annual Technical Digest 1997 Pub Date : 1997-10-12 DOI: 10.1109/GAAS.1997.628227
E. J. Lum
{"title":"GaAs technology rides the wireless wave","authors":"E. J. Lum","doi":"10.1109/GAAS.1997.628227","DOIUrl":"https://doi.org/10.1109/GAAS.1997.628227","url":null,"abstract":"This paper discusses GaAs technology with regard to substrate materials, semiconductor devices, and the thriving wireless handset market that is carrying the GaAs industry toward record-breaking revenue and unit volume. A vertical view of the GaAs market for wireless applications is presented to provide a complete picture of the GaAs food chain. This paper does not focus on digital GaAs ICs and their applications but briefly mentions them.","PeriodicalId":299287,"journal":{"name":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 19th Annual Technical Digest 1997","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-10-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129631752","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
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