Device and process optimization for a low voltage enhancement mode power heterojunction FET for portable applications

Abstract

This paper describes a true enhancement mode RF power device with state-of-the-art performance operated at 3.5 Volts at 900 MHz. The performance was realized with a technology derived from the digital CGaAs/sup TM/ technology. The necessary device and process optimizations to adapt the digital technology for RF applications are discussed and results presented.