J. Huang, E. Glass, J. Abrokwah, B. Bernhardt, M. Majerus, E. Spears, J. Parsey, D. Scheitlin, R. Droopad, L. Mills, K. Hawthorne, J. Blaugh
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Device and process optimization for a low voltage enhancement mode power heterojunction FET for portable applications
This paper describes a true enhancement mode RF power device with state-of-the-art performance operated at 3.5 Volts at 900 MHz. The performance was realized with a technology derived from the digital CGaAs/sup TM/ technology. The necessary device and process optimizations to adapt the digital technology for RF applications are discussed and results presented.
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