用于40gbit /s光传输系统的InP/InGaAs HBT集成电路

GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 19th Annual Technical Digest 1997 Pub Date : 1997-10-12 DOI:10.1109/GAAS.1997.628272

H. Suzuki, K. Watanabe, K. Ishikawa, H. Masuda, K. Ouchi, T. Tanoue, R. Takeyari

{"title":"用于40gbit /s光传输系统的InP/InGaAs HBT集成电路","authors":"H. Suzuki, K. Watanabe, K. Ishikawa, H. Masuda, K. Ouchi, T. Tanoue, R. Takeyari","doi":"10.1109/GAAS.1997.628272","DOIUrl":null,"url":null,"abstract":"An IC chip set for 40 Gbit/s TDM optical transmission systems was designed and fabricated using an InP/InGaAs HBT technology. For digital ICs, a modulator driver, a D-type flip flop at 20 Gbit/s, and a 2:1 selector at 40 Gbit/s were fabricated. Also, three analog ICs were developed: the five-section cascode distributed amplifier which obtained a gain of 9.5 dB in the frequency range of 1-50 GHz, the 41.9 dB/spl Omega/ transimpedance amplifier which achieved more than 40 GHz bandwidth assuming 50 fF input capacitance for the photodetector, the two-stage differential amplifier which obtained a 7.5 dB gain with a bandwidth of 40 GHz.","PeriodicalId":299287,"journal":{"name":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 19th Annual Technical Digest 1997","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1997-10-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"23","resultStr":"{\"title\":\"InP/InGaAs HBT ICs for 40 Gbit/s optical transmission systems\",\"authors\":\"H. Suzuki, K. Watanabe, K. Ishikawa, H. Masuda, K. Ouchi, T. Tanoue, R. Takeyari\",\"doi\":\"10.1109/GAAS.1997.628272\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"An IC chip set for 40 Gbit/s TDM optical transmission systems was designed and fabricated using an InP/InGaAs HBT technology. For digital ICs, a modulator driver, a D-type flip flop at 20 Gbit/s, and a 2:1 selector at 40 Gbit/s were fabricated. Also, three analog ICs were developed: the five-section cascode distributed amplifier which obtained a gain of 9.5 dB in the frequency range of 1-50 GHz, the 41.9 dB/spl Omega/ transimpedance amplifier which achieved more than 40 GHz bandwidth assuming 50 fF input capacitance for the photodetector, the two-stage differential amplifier which obtained a 7.5 dB gain with a bandwidth of 40 GHz.\",\"PeriodicalId\":299287,\"journal\":{\"name\":\"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 19th Annual Technical Digest 1997\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1997-10-12\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"23\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 19th Annual Technical Digest 1997\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/GAAS.1997.628272\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 19th Annual Technical Digest 1997","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GAAS.1997.628272","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 23

摘要

采用InP/InGaAs HBT技术，设计并制作了用于40gbit /s TDM光传输系统的集成电路芯片组。对于数字集成电路，制作了一个调制器驱动器，一个20 Gbit/s的d型触发器和一个40 Gbit/s的2:1选择器。此外，还开发了三种模拟集成电路:在1-50 GHz频率范围内获得9.5 dB增益的五段级联分布式放大器，在光电探测器输入电容为50 fF的情况下获得超过40 GHz带宽的41.9 dB/spl Omega/跨阻放大器，以及在40 GHz带宽范围内获得7.5 dB增益的两级差分放大器。

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InP/InGaAs HBT ICs for 40 Gbit/s optical transmission systems

An IC chip set for 40 Gbit/s TDM optical transmission systems was designed and fabricated using an InP/InGaAs HBT technology. For digital ICs, a modulator driver, a D-type flip flop at 20 Gbit/s, and a 2:1 selector at 40 Gbit/s were fabricated. Also, three analog ICs were developed: the five-section cascode distributed amplifier which obtained a gain of 9.5 dB in the frequency range of 1-50 GHz, the 41.9 dB/spl Omega/ transimpedance amplifier which achieved more than 40 GHz bandwidth assuming 50 fF input capacitance for the photodetector, the two-stage differential amplifier which obtained a 7.5 dB gain with a bandwidth of 40 GHz.

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来源期刊

GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 19th Annual Technical Digest 1997

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