A 1.4 watt Q-band GaAs PHEMT MMIC

GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 19th Annual Technical Digest 1997 Pub Date : 1997-10-12 DOI:10.1109/GAAS.1997.628287

S. Nash, A. Platzker, R. Wohlert, C. Liss

引用次数: 7

Abstract

A Q-band three-stage monolithic GaAs PHEMT amplifier with an output power of 1.4 W from 42 to 45 GHz has been developed. Power added efficiency between 14 and 18% with an associated gain of 12.5 dB was measured when biased at Vds=6.0 V and Idsq=1000 mA. When biased at Vds=5.0 V, Idsq=1000 mA this amplifier has demonstrated over 1.1 W of output power with an associated gain of 11.5 to 12.5 dB from 41 to 46 GHz. Similar performances were also measured when the design was transferred from 2 mil thick 3 inch diameter pilot process line to the 2 mil thick, 4 inch diameter manufacturing process line.

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一个1.4瓦q波段GaAs PHEMT MMIC

研制了一种在42 ~ 45 GHz范围内输出功率为1.4 W的q波段单片砷化镓PHEMT放大器。当偏置Vds=6.0 V, Idsq=1000 mA时，测量到功率增加效率在14%至18%之间，相关增益为12.5 dB。当偏置Vds=5.0 V, Idsq=1000 mA时，该放大器的输出功率超过1.1 W，相关增益为11.5至12.5 dB，范围为41至46 GHz。当设计从2 mil厚3英寸直径的中试工艺线转移到2 mil厚4英寸直径的制造工艺线时，也测量了类似的性能。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 19th Annual Technical Digest 1997

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