一个1.4瓦q波段GaAs PHEMT MMIC

GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 19th Annual Technical Digest 1997 Pub Date : 1997-10-12 DOI:10.1109/GAAS.1997.628287

S. Nash, A. Platzker, R. Wohlert, C. Liss

{"title":"一个1.4瓦q波段GaAs PHEMT MMIC","authors":"S. Nash, A. Platzker, R. Wohlert, C. Liss","doi":"10.1109/GAAS.1997.628287","DOIUrl":null,"url":null,"abstract":"A Q-band three-stage monolithic GaAs PHEMT amplifier with an output power of 1.4 W from 42 to 45 GHz has been developed. Power added efficiency between 14 and 18% with an associated gain of 12.5 dB was measured when biased at Vds=6.0 V and Idsq=1000 mA. When biased at Vds=5.0 V, Idsq=1000 mA this amplifier has demonstrated over 1.1 W of output power with an associated gain of 11.5 to 12.5 dB from 41 to 46 GHz. Similar performances were also measured when the design was transferred from 2 mil thick 3 inch diameter pilot process line to the 2 mil thick, 4 inch diameter manufacturing process line.","PeriodicalId":299287,"journal":{"name":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 19th Annual Technical Digest 1997","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1997-10-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":"{\"title\":\"A 1.4 watt Q-band GaAs PHEMT MMIC\",\"authors\":\"S. Nash, A. Platzker, R. Wohlert, C. Liss\",\"doi\":\"10.1109/GAAS.1997.628287\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A Q-band three-stage monolithic GaAs PHEMT amplifier with an output power of 1.4 W from 42 to 45 GHz has been developed. Power added efficiency between 14 and 18% with an associated gain of 12.5 dB was measured when biased at Vds=6.0 V and Idsq=1000 mA. When biased at Vds=5.0 V, Idsq=1000 mA this amplifier has demonstrated over 1.1 W of output power with an associated gain of 11.5 to 12.5 dB from 41 to 46 GHz. Similar performances were also measured when the design was transferred from 2 mil thick 3 inch diameter pilot process line to the 2 mil thick, 4 inch diameter manufacturing process line.\",\"PeriodicalId\":299287,\"journal\":{\"name\":\"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 19th Annual Technical Digest 1997\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1997-10-12\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"7\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 19th Annual Technical Digest 1997\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/GAAS.1997.628287\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 19th Annual Technical Digest 1997","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GAAS.1997.628287","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 7

摘要

研制了一种在42 ~ 45 GHz范围内输出功率为1.4 W的q波段单片砷化镓PHEMT放大器。当偏置Vds=6.0 V, Idsq=1000 mA时，测量到功率增加效率在14%至18%之间，相关增益为12.5 dB。当偏置Vds=5.0 V, Idsq=1000 mA时，该放大器的输出功率超过1.1 W，相关增益为11.5至12.5 dB，范围为41至46 GHz。当设计从2 mil厚3英寸直径的中试工艺线转移到2 mil厚4英寸直径的制造工艺线时，也测量了类似的性能。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

A 1.4 watt Q-band GaAs PHEMT MMIC

A Q-band three-stage monolithic GaAs PHEMT amplifier with an output power of 1.4 W from 42 to 45 GHz has been developed. Power added efficiency between 14 and 18% with an associated gain of 12.5 dB was measured when biased at Vds=6.0 V and Idsq=1000 mA. When biased at Vds=5.0 V, Idsq=1000 mA this amplifier has demonstrated over 1.1 W of output power with an associated gain of 11.5 to 12.5 dB from 41 to 46 GHz. Similar performances were also measured when the design was transferred from 2 mil thick 3 inch diameter pilot process line to the 2 mil thick, 4 inch diameter manufacturing process line.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 19th Annual Technical Digest 1997

自引率

0.00%

发文量