GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 19th Annual Technical Digest 1997最新文献_第2页

Influence of T-gate shape and footprint length on PHEMT high frequency performance t型栅极形状和压片长度对PHEMT高频性能的影响

GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 19th Annual Technical Digest 1997 Pub Date : 1997-10-12 DOI: 10.1109/GAAS.1997.628239

H. Brech, T. Grave, T. Simlinger, S. Selberherr

引用次数: 5

Conductance DLTS analysis of the correlation between power slump and gate lag 电导DLTS分析功率坍落度与栅极滞后的相关性

GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 19th Annual Technical Digest 1997 Pub Date : 1997-10-12 DOI: 10.1109/GAAS.1997.628262

R. Leoni, J. Bao, X. Du, M. Shirokov, J.C.M. Hwang

引用次数: 8

Noise reduction of pHEMTs with plasmaless SiN passivation by catalytic CVD 催化气相沉积法钝化phemt的降噪研究

GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 19th Annual Technical Digest 1997 Pub Date : 1997-10-12 DOI: 10.1109/GAAS.1997.628242

R. Hattori, G. Nakamura, S. Nomura, T. Ichise, A. Masuda, H. Matsumura

引用次数: 7

GaAs MEMS design using 0.2 /spl mu/m HEMT MMIC technology GaAs MEMS设计采用0.2 /spl μ m HEMT MMIC技术

GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 19th Annual Technical Digest 1997 Pub Date : 1997-10-12 DOI: 10.1109/GAAS.1997.628253

R. Ribas, N. Bennouri, J. Karam, B. Courtois

{"title":"GaAs MEMS design using 0.2 /spl mu/m HEMT MMIC technology","authors":"R. Ribas, N. Bennouri, J. Karam, B. Courtois","doi":"10.1109/GAAS.1997.628253","DOIUrl":"https://doi.org/10.1109/GAAS.1997.628253","url":null,"abstract":"This paper presents the GaAs front-side bulk micromachining using the 0.2 /spl mu/m HEMT MMIC technology from Philips Microwave Limeil (PML). The free-standing structures are obtained by removing wells of the GaAs substrate through an additional post-process wet chemical etching, without any modification in the standard IC fabrication and with no influence on the electronic behaviour. It is a very flexible approach to construct bridges, cantilevers and membranes. In respect to the suspended material and vertical profile, different structures could be realized according to the etching solution used and the layout arrangement. Among potential applications, thermopile based devices, such as infrared sensors, gas-flow sensors and thermoconverters could be targeted using GaAs/metal thermocouples. Moreover, suspended microstrips transmission lines and planar spiral inductor are also very useful to enhance the RF circuit performance. Finally, a complete CAD engineering kit containing the micromachining design rules, layout generators and a cross-section viewer has been developed on the Mentor Graphics framework.","PeriodicalId":299287,"journal":{"name":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 19th Annual Technical Digest 1997","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-10-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124701130","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 5

0.15 micron gate AlInAs/GaInAs MHEMT fabricated on GaAs using deep-UV phase-shifting mask lithography 利用深紫外移相掩膜光刻技术在GaAs上制备0.15微米栅极AlInAs/GaInAs MHEMT

GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 19th Annual Technical Digest 1997 Pub Date : 1997-10-12 DOI: 10.1109/GAAS.1997.628241

J.G. Wang, K. Hur, L. Studebaker, B. Keppeler, A. Quach

引用次数: 6

A 0.1-/spl mu/m double-deck-shaped gate HJFET with reduced gate-fringing-capacitance for ultra-high-speed ICs 一种用于超高速集成电路的0.1 /spl mu/m双层栅极HJFET，具有减小栅极边缘电容

GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 19th Annual Technical Digest 1997 Pub Date : 1997-10-12 DOI: 10.1109/GAAS.1997.628240

S. Wada, J. Yamazaki, M. Ishikawa, T. Maeda

{"title":"A 0.1-/spl mu/m double-deck-shaped gate HJFET with reduced gate-fringing-capacitance for ultra-high-speed ICs","authors":"S. Wada, J. Yamazaki, M. Ishikawa, T. Maeda","doi":"10.1109/GAAS.1997.628240","DOIUrl":"https://doi.org/10.1109/GAAS.1997.628240","url":null,"abstract":"This paper describes a novel double-deck-shaped (DDS) gate technology for 0.1-/spl mu/m heterojunction-FETs (HJFETs) that have half the external gate fringing capacitance (C/sub f//sup ext/) of conventional T-shaped gate HJFETs. By introducing a T-shaped SiO/sub 2/-opening technique based on two-step dry-etching with W-film masks, we have fabricated 0.1-/spl mu/m DDS gate-openings adapted to the reduction in C/sub f//sup ext/ and to the voidless-filling of gate-metals. Moreover, by using WSi-collimated sputtering and electroless Au-plating, 0.1-/spl mu/m DDS WSi/Ti/Pt/Au gate HJFETs with high uniformity and reproducibility are made. Fabricated n-Al/sub 0.2/Ga/sub 0.8/As-In/sub 0.15/Ga/sub 0.75/As HJFETs exhibit an excellent V/sub th/ standard-deviation (/spl sigma/V/sub th/) of 39 mV. Also, the HJFET covered with a SiO/sub 2/ film shows a very high millimeter-wave performance with f/sub T/ of 120 GHz and f/sub max/ of 165 GHz, due to the low C/sub f//sup ext/. In addition, a high f/sub T/ of 151 GHz and f/sub max/ of 186 GHz are obtained without a SiO/sub 2/ film.","PeriodicalId":299287,"journal":{"name":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 19th Annual Technical Digest 1997","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-10-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134084278","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 4

Sub-1.3 dB noise figure direct-coupled MMIC LNAs using a high current-gain 1-/spl mu/m GaAs HBT technology 采用高电流增益1-/spl μ m GaAs HBT技术的噪声系数低于1.3 dB的直接耦合MMIC LNAs

GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 19th Annual Technical Digest 1997 Pub Date : 1997-10-12 DOI: 10.1109/GAAS.1997.628278

K. Kobayashi, L. Tran, M. Lammert, T. Block, P. Grossman, A. Oki, D. Streit

引用次数: 16

Parallel optical links for gigabyte/s data communication 用于千兆字节/秒数据通信的并行光链路

GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 19th Annual Technical Digest 1997 Pub Date : 1997-10-12 DOI: 10.1109/GAAS.1997.628267

A. Yuen, K. Giboney, E. Wong, L. Buckman, D. Haritos, P. Rosenberg, D. Dolfi

引用次数: 4

A 2 W, 62% PAE, small chip size HBT MMIC for 3 V PCN applications 一个2w, 62% PAE，小芯片尺寸HBT MMIC用于3v PCN应用

GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 19th Annual Technical Digest 1997 Pub Date : 1997-10-12 DOI: 10.1109/GAAS.1997.628282

J. Mueller, P. Baureis, O. Berger, T. Boettner, N. Bovolon, G. Packeiser, P. Zwicknagl

引用次数: 12

High-performance 19 GHz-band GaAs FET switches using LOXI (Layered-Oxide-Isolation)-MESFETs 高性能19 ghz频段GaAs FET开关采用LOXI(层状氧化物隔离)- mesfet

GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 19th Annual Technical Digest 1997 Pub Date : 1997-10-12 DOI: 10.1109/GAAS.1997.628238

A. Kanda, S. Kodama, T. Furuta, T. Nittono, T. Ishibashi, M. Muraguchi

引用次数: 4