Noise reduction of pHEMTs with plasmaless SiN passivation by catalytic CVD

GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 19th Annual Technical Digest 1997 Pub Date : 1997-10-12 DOI:10.1109/GAAS.1997.628242

R. Hattori, G. Nakamura, S. Nomura, T. Ichise, A. Masuda, H. Matsumura

引用次数: 7

Abstract

We improved the catalytic (cat-) CVD technique for damage free passivation on compound semiconductors. The cat-CVD SiN passivation successfully reduces the noise figure of X-band pHEMTs because Rs and Cgs are reduced due to low deposition damage.

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催化气相沉积法钝化phemt的降噪研究

我们改进了催化(cat-) CVD技术用于化合物半导体的无损伤钝化。cat-CVD SiN钝化成功地降低了x波段pHEMTs的噪声系数，因为低沉积损伤降低了Rs和Cgs。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 19th Annual Technical Digest 1997

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