GaAs MEMS design using 0.2 /spl mu/m HEMT MMIC technology

GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 19th Annual Technical Digest 1997 Pub Date : 1997-10-12 DOI:10.1109/GAAS.1997.628253

R. Ribas, N. Bennouri, J. Karam, B. Courtois

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引用次数: 5

Abstract

This paper presents the GaAs front-side bulk micromachining using the 0.2 /spl mu/m HEMT MMIC technology from Philips Microwave Limeil (PML). The free-standing structures are obtained by removing wells of the GaAs substrate through an additional post-process wet chemical etching, without any modification in the standard IC fabrication and with no influence on the electronic behaviour. It is a very flexible approach to construct bridges, cantilevers and membranes. In respect to the suspended material and vertical profile, different structures could be realized according to the etching solution used and the layout arrangement. Among potential applications, thermopile based devices, such as infrared sensors, gas-flow sensors and thermoconverters could be targeted using GaAs/metal thermocouples. Moreover, suspended microstrips transmission lines and planar spiral inductor are also very useful to enhance the RF circuit performance. Finally, a complete CAD engineering kit containing the micromachining design rules, layout generators and a cross-section viewer has been developed on the Mentor Graphics framework.

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GaAs MEMS设计采用0.2 /spl μ m HEMT MMIC技术

本文介绍了采用Philips Microwave Limeil (PML)的0.2 /spl mu/m HEMT MMIC技术进行GaAs前端体微加工。独立结构是通过额外的后处理湿化学蚀刻去除GaAs衬底的井而获得的，在标准IC制造中没有任何修改，并且对电子行为没有影响。这是一种非常灵活的建造桥梁、悬臂和膜的方法。对于悬浮材料和垂直轮廓，根据所使用的蚀刻溶液和布局安排可以实现不同的结构。在潜在的应用中，基于热电堆的设备，如红外传感器、气体流量传感器和热转换器，可以使用砷化镓/金属热电偶作为目标。此外，悬浮微带传输线和平面螺旋电感器也有助于提高射频电路的性能。最后，在Mentor Graphics框架上开发了包含微加工设计规则、布局生成器和截面查看器的完整CAD工程工具包。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 19th Annual Technical Digest 1997

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