利用深紫外移相掩膜光刻技术在GaAs上制备0.15微米栅极AlInAs/GaInAs MHEMT

GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 19th Annual Technical Digest 1997 Pub Date : 1997-10-12 DOI:10.1109/GAAS.1997.628241

J.G. Wang, K. Hur, L. Studebaker, B. Keppeler, A. Quach

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引用次数: 6

摘要

提出了一种采用深紫外步进和移相掩模光刻技术的0.15 um栅极工艺。这种工艺消除了低通量、直接写入电子束栅光刻的需要。利用这一工艺，我们首次在f/sub /s高达119 GHz的GaAs上制造了AlInAs/GaInAs mhemt。对于制造大批量、高性能、低成本的砷化镓集成电路来说，这种光学方法非常有吸引力。

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0.15 micron gate AlInAs/GaInAs MHEMT fabricated on GaAs using deep-UV phase-shifting mask lithography

A 0.15 um gate process using a deep-UV stepper and phase-shifting mask lithography has been developed. This process eliminates the need for low throughput, direct write e-beam gate lithography. Using this process we have fabricated, for the first time, AlInAs/GaInAs MHEMTs on GaAs with f/sub t/'s up to 119 GHz. This optical approach for gate lithography is very attractive for manufacturing high volume, high performance, low cost GaAs integrated circuits.

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来源期刊

GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 19th Annual Technical Digest 1997

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