采用高电流增益1-/spl μ m GaAs HBT技术的噪声系数低于1.3 dB的直接耦合MMIC LNAs

K. Kobayashi, L. Tran, M. Lammert, T. Block, P. Grossman, A. Oki, D. Streit
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引用次数: 16

摘要

在这里,我们报告了直接耦合的HBT MMIC LNAs,其噪声数字高达2 GHz,低于1.3 dB。这被认为是在该频率范围内报道的50/spl Omega/ mmic匹配LNA的最低噪声系数(NF)。lna基于新的1-/spl mu/m GaAs HBT技术,该技术提供>400的高直流电流增益和超过40 GHz的f/sub T/ s,并实现低宽带放大器噪声系数性能。DC-3.2 GHz HBT LNA (DCLNA2)设计在2ghz下实现24.6 dB增益和低于1.3 dB的NF,同时仅消耗7.8 mA电流。在1.5 GHz时,最小LNA噪声系数为1.22 dB。dc - 6ghz设计(DCLNA1)在4ghz时可实现26.1 dB增益和小于2db的NF,而功耗为16.4 mA。6ghz时的NF为2.52 dB,对应的IP3为11dbm。这些HBT mmic为包含工业-科学-医疗(ISM)无线频段的接收器应用提供了低成本的LNA解决方案。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Sub-1.3 dB noise figure direct-coupled MMIC LNAs using a high current-gain 1-/spl mu/m GaAs HBT technology
Here we report on direct-coupled HBT MMIC LNAs which achieve sub-1.3 dB noise figures up to 2 GHz. This is believed to be the lowest noise figure (NF) reported for a 50/spl Omega/ MMIC-matched LNA in this frequency range. The LNAs are based on a new 1-/spl mu/m GaAs HBT technology which provides high DC current gains of >400 and f/sub T/'s in excess of 40 GHz and enables low broadband amplifier noise figure performance. A DC-3.2 GHz HBT LNA (DCLNA2) design achieves a gain of 24.6 dB and sub-1.3 dB NF up to 2 GHz while consuming only 7.8 mA of current. The minimum LNA noise figure is 1.22 dB at 1.5 GHz. A DC-6 GHz design (DCLNA1) achieves 26.1 dB gain and a NF less than 2 dB up to 4 GHz while consuming 16.4 mA. The NF at 6 GHz is 2.52 dB with a corresponding IP3 of 11 dBm. These HBT MMICs provide a low cost LNA solution for receiver applications encompassing the industrial-scientific-medical (ISM) wireless bands.
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