K. Kobayashi, L. Tran, M. Lammert, T. Block, P. Grossman, A. Oki, D. Streit
{"title":"采用高电流增益1-/spl μ m GaAs HBT技术的噪声系数低于1.3 dB的直接耦合MMIC LNAs","authors":"K. Kobayashi, L. Tran, M. Lammert, T. Block, P. Grossman, A. Oki, D. Streit","doi":"10.1109/GAAS.1997.628278","DOIUrl":null,"url":null,"abstract":"Here we report on direct-coupled HBT MMIC LNAs which achieve sub-1.3 dB noise figures up to 2 GHz. This is believed to be the lowest noise figure (NF) reported for a 50/spl Omega/ MMIC-matched LNA in this frequency range. The LNAs are based on a new 1-/spl mu/m GaAs HBT technology which provides high DC current gains of >400 and f/sub T/'s in excess of 40 GHz and enables low broadband amplifier noise figure performance. A DC-3.2 GHz HBT LNA (DCLNA2) design achieves a gain of 24.6 dB and sub-1.3 dB NF up to 2 GHz while consuming only 7.8 mA of current. The minimum LNA noise figure is 1.22 dB at 1.5 GHz. A DC-6 GHz design (DCLNA1) achieves 26.1 dB gain and a NF less than 2 dB up to 4 GHz while consuming 16.4 mA. The NF at 6 GHz is 2.52 dB with a corresponding IP3 of 11 dBm. These HBT MMICs provide a low cost LNA solution for receiver applications encompassing the industrial-scientific-medical (ISM) wireless bands.","PeriodicalId":299287,"journal":{"name":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 19th Annual Technical Digest 1997","volume":"13 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1997-10-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"16","resultStr":"{\"title\":\"Sub-1.3 dB noise figure direct-coupled MMIC LNAs using a high current-gain 1-/spl mu/m GaAs HBT technology\",\"authors\":\"K. Kobayashi, L. Tran, M. Lammert, T. Block, P. Grossman, A. Oki, D. Streit\",\"doi\":\"10.1109/GAAS.1997.628278\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Here we report on direct-coupled HBT MMIC LNAs which achieve sub-1.3 dB noise figures up to 2 GHz. This is believed to be the lowest noise figure (NF) reported for a 50/spl Omega/ MMIC-matched LNA in this frequency range. The LNAs are based on a new 1-/spl mu/m GaAs HBT technology which provides high DC current gains of >400 and f/sub T/'s in excess of 40 GHz and enables low broadband amplifier noise figure performance. A DC-3.2 GHz HBT LNA (DCLNA2) design achieves a gain of 24.6 dB and sub-1.3 dB NF up to 2 GHz while consuming only 7.8 mA of current. The minimum LNA noise figure is 1.22 dB at 1.5 GHz. A DC-6 GHz design (DCLNA1) achieves 26.1 dB gain and a NF less than 2 dB up to 4 GHz while consuming 16.4 mA. The NF at 6 GHz is 2.52 dB with a corresponding IP3 of 11 dBm. These HBT MMICs provide a low cost LNA solution for receiver applications encompassing the industrial-scientific-medical (ISM) wireless bands.\",\"PeriodicalId\":299287,\"journal\":{\"name\":\"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 19th Annual Technical Digest 1997\",\"volume\":\"13 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1997-10-12\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"16\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 19th Annual Technical Digest 1997\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/GAAS.1997.628278\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 19th Annual Technical Digest 1997","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GAAS.1997.628278","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Sub-1.3 dB noise figure direct-coupled MMIC LNAs using a high current-gain 1-/spl mu/m GaAs HBT technology
Here we report on direct-coupled HBT MMIC LNAs which achieve sub-1.3 dB noise figures up to 2 GHz. This is believed to be the lowest noise figure (NF) reported for a 50/spl Omega/ MMIC-matched LNA in this frequency range. The LNAs are based on a new 1-/spl mu/m GaAs HBT technology which provides high DC current gains of >400 and f/sub T/'s in excess of 40 GHz and enables low broadband amplifier noise figure performance. A DC-3.2 GHz HBT LNA (DCLNA2) design achieves a gain of 24.6 dB and sub-1.3 dB NF up to 2 GHz while consuming only 7.8 mA of current. The minimum LNA noise figure is 1.22 dB at 1.5 GHz. A DC-6 GHz design (DCLNA1) achieves 26.1 dB gain and a NF less than 2 dB up to 4 GHz while consuming 16.4 mA. The NF at 6 GHz is 2.52 dB with a corresponding IP3 of 11 dBm. These HBT MMICs provide a low cost LNA solution for receiver applications encompassing the industrial-scientific-medical (ISM) wireless bands.