在GaAs上生长的长波长MSM-HEMT和PIN-HEMT光电接收器

GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 19th Annual Technical Digest 1997 Pub Date : 1997-10-12 DOI:10.1109/GAAS.1997.628268

V. Hurm, W. Benz, W. Bronner, T. Fink, T. Jakobus, G. Kaufel, K. Kohler, Z. Lao, A. Leven, M. Ludwig, C. Moglestue, B. Raynor, J. Rosenzweig, M. Schlechtweg, A. Thiede, S. Weisser

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引用次数: 8

摘要

采用栅极长度为0.3 μm的AlGaAs/GaAs HEMT工艺，将波长为1.3 ~ 1.55μm、波长为20 Gbit/s的MSM-HEMT和10 Gbit/s的PIN-HEMT光接收器单片集成在GaAs衬底上。在GaAs上生长的In/sub 0.53/Ga/sub 0.47/As MSM和PIN光电二极管与在InP上生长的光电二极管具有几乎相同的特性。

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Long wavelength MSM-HEMT and PIN-HEMT photoreceivers grown on GaAs

1.3 - 1.55μm wavelength 20 Gbit/s MSM-HEMT and 10 Gbit/s PIN-HEMT photoreceivers have been monolithically integrated on GaAs substrates using a 0.3 μm gate length AlGaAs/GaAs HEMT process. The In/sub 0.53/Ga/sub 0.47/As MSM and PIN photodiodes grown on GaAs have nearly identical characteristics to photodiodes grown on InP.

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GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 19th Annual Technical Digest 1997

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