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GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 19th Annual Technical Digest 1997最新文献

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W-CDMA: An approach toward next generation mobile radio system, IMT-2000 W-CDMA:下一代移动无线电系统IMT-2000的一种方法
GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 19th Annual Technical Digest 1997 Pub Date : 1997-10-12 DOI: 10.1109/GAAS.1997.628225
Y. Furuya
{"title":"W-CDMA: An approach toward next generation mobile radio system, IMT-2000","authors":"Y. Furuya","doi":"10.1109/GAAS.1997.628225","DOIUrl":"https://doi.org/10.1109/GAAS.1997.628225","url":null,"abstract":"This paper described the wideband CDMA (W-CDMA) system, which has been selected as a strong candidate for next generation cellular systems in Japan. The proposed system can satisfy IMT-2000 system requirement. Basic system performances were confirmed through the field test in Tokyo metropolitan area. Detailed specification work for W-CDMA system has started, since the system has been agreed to be feasible through the field test.","PeriodicalId":299287,"journal":{"name":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 19th Annual Technical Digest 1997","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-10-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133256834","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Resonant tunneling circuit technology: has it arrived? 共振隧道电路技术:到来了吗?
GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 19th Annual Technical Digest 1997 Pub Date : 1997-10-12 DOI: 10.1109/GAAS.1997.628251
A. Seabaugh, B. Brar, T. Broekaert, G. Frazier, F. Morris, E. Beam
{"title":"Resonant tunneling circuit technology: has it arrived?","authors":"A. Seabaugh, B. Brar, T. Broekaert, G. Frazier, F. Morris, E. Beam","doi":"10.1109/GAAS.1997.628251","DOIUrl":"https://doi.org/10.1109/GAAS.1997.628251","url":null,"abstract":"A three-dimensional large-scale integration (LSI) process for fabrication of resonant tunneling diodes and heterojunction field-effect transistors on InP has been demonstrated, combining two of today's fastest semiconductor devices. Demonstrations of this technology now include multigigahertz digital and mixed-signal circuits and ultralow power SRAM circuits; 25 to 100 GHz circuits are clearly in range for this technology.","PeriodicalId":299287,"journal":{"name":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 19th Annual Technical Digest 1997","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-10-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131256108","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 26
Effects of electrostatic discharge on GaAs-based HBTs 静电放电对gaas基HBTs的影响
GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 19th Annual Technical Digest 1997 Pub Date : 1997-10-12 DOI: 10.1109/GAAS.1997.628258
T. Henderson
{"title":"Effects of electrostatic discharge on GaAs-based HBTs","authors":"T. Henderson","doi":"10.1109/GAAS.1997.628258","DOIUrl":"https://doi.org/10.1109/GAAS.1997.628258","url":null,"abstract":"Short term and long term effects of electrostatic discharge (ESD) on GaAs-based HBTs are described. Both single-finger and multi-finger devices were tested, at ESD levels from 300 to 8000 V. Typically, devices subject to ESD show increasing levels of leakage current and/or decreased breakdown voltages. ESD effects on single and multi-finger devices are discussed, as well as the effects of ballasting. Finally, the results of long-term bias stress on ESD exposed devices is described.","PeriodicalId":299287,"journal":{"name":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 19th Annual Technical Digest 1997","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-10-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124304523","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 9
Bandpass delta-sigma modulator with 800 MHz center frequency 带通δ - σ调制器与800mhz中心频率
GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 19th Annual Technical Digest 1997 Pub Date : 1997-10-12 DOI: 10.1109/GAAS.1997.628246
A. Jayaraman, P. Asbeck, K. Nary, S. Beccue, Keh-Chung Wang
{"title":"Bandpass delta-sigma modulator with 800 MHz center frequency","authors":"A. Jayaraman, P. Asbeck, K. Nary, S. Beccue, Keh-Chung Wang","doi":"10.1109/GAAS.1997.628246","DOIUrl":"https://doi.org/10.1109/GAAS.1997.628246","url":null,"abstract":"A fourth-order bandpass /spl Delta/-/spl Sigma/ modulator with center frequency of 800 MHz designed and fabricated in AlGaAs/GaAs heterojunction bipolar transistor (HBT) technology is reported. The modulator can be clocked at a continuum of frequencies from 2-4 GHz. Its performance was characterized at one convenient clock frequency, 3.2 GHz, since clocking the modulator at 4 times the center frequency allows for trivial extraction of in-phase and quadrature components of the bandpass signal in the digital domain. The 1-bit modulator output achieves a signal-to-noise ratio of 66 dB over a 100 kHz bandwidth and 41 dB over a 25 MHz bandwidth (which covers the entire cellular band).","PeriodicalId":299287,"journal":{"name":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 19th Annual Technical Digest 1997","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-10-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116987130","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 43
GaAs MMICs for cellular broadband wireless infrastructure: a system perspective 用于蜂窝宽带无线基础设施的GaAs mmic:系统视角
GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 19th Annual Technical Digest 1997 Pub Date : 1997-10-12 DOI: 10.1109/GAAS.1997.628283
C. Buck, P. Lombardelli, M. J. Pomeroy
{"title":"GaAs MMICs for cellular broadband wireless infrastructure: a system perspective","authors":"C. Buck, P. Lombardelli, M. J. Pomeroy","doi":"10.1109/GAAS.1997.628283","DOIUrl":"https://doi.org/10.1109/GAAS.1997.628283","url":null,"abstract":"Rather than describing a MMIC in detail, this paper focuses on some of the system level issues concerning the integration of MMICs. The system to be described is a MM-wave Broadband Wireless system and is a commercial system where cost plays a crucial role in its success. MMICs can provide a low cost solution but only if they are incorporated in the correct manner. Three aspects of integration are discussed: a suitable low cost transition from waveguide to the MMIC, a method of contacting the MMIC to the transition and low cost housing.","PeriodicalId":299287,"journal":{"name":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 19th Annual Technical Digest 1997","volume":"301 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-10-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133682209","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A high performance GaAs MMIC upconverter with an automatic gain control amplifier 具有自动增益控制放大器的高性能GaAs MMIC上变频器
GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 19th Annual Technical Digest 1997 Pub Date : 1997-10-12 DOI: 10.1109/GAAS.1997.628276
Huainan Ma, Sher Jiun Fang, Fujiang Lin, Khen-Sang Tan, J. Shibata, Atsushi Tamura, Hiroshi Nakamura
{"title":"A high performance GaAs MMIC upconverter with an automatic gain control amplifier","authors":"Huainan Ma, Sher Jiun Fang, Fujiang Lin, Khen-Sang Tan, J. Shibata, Atsushi Tamura, Hiroshi Nakamura","doi":"10.1109/GAAS.1997.628276","DOIUrl":"https://doi.org/10.1109/GAAS.1997.628276","url":null,"abstract":"A newly developed GaAs MMIC upconverter with an automatic gain control (AGC) amplifier is presented. The circuit is to be used in a 1.9 GHz RF transceiver for the Japanese PHS applications. The features of the upconverter are: (1) on-chip 50 /spl Omega/ impedance matching for all AC input and output signals; (2) a double balanced Gilbert cell and a 2-stage AGC amplifier with matching circuits that provide 23 dB conversion gain, -39 dBc LO suppression, -23 dBc image suppression and 30 dB gain control; (3) Adjacent Channel Power (ACP) of -70 dBc; and (4) a die size of only 2.87 mm/sup 2/ (2.52 mm/spl times/1.14 mm).","PeriodicalId":299287,"journal":{"name":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 19th Annual Technical Digest 1997","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-10-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133886342","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 9
Device technology of InP/InGaAs HBTs for 40-Gb/s optical transmission application 用于40gb /s光传输的InP/InGaAs HBTs器件技术
GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 19th Annual Technical Digest 1997 Pub Date : 1997-10-12 DOI: 10.1109/GAAS.1997.628256
H. Masuda, K. Ouchi, A. Terano, H. Suzuki, K. Watanabe, T. Oka, H. Matsubara, T. Tanoue
{"title":"Device technology of InP/InGaAs HBTs for 40-Gb/s optical transmission application","authors":"H. Masuda, K. Ouchi, A. Terano, H. Suzuki, K. Watanabe, T. Oka, H. Matsubara, T. Tanoue","doi":"10.1109/GAAS.1997.628256","DOIUrl":"https://doi.org/10.1109/GAAS.1997.628256","url":null,"abstract":"Several techniques that enable high-yield fabrication of high-performance high-thermal-stability InP/InGaAs heterojunction bipolar transistors (HBTs) for use in 40-Gb/s ICs were developed. The T-shaped emitter electrode structure provides a simple fabrication process. A highly-C-doped base and a new Pt/Ti/Mo/Ti/Pt/Au metal system result in a thin base and low base resistance. An InP subcollector suppresses thermal runaway at high collector current. Using these techniques, an extremely high cutoff frequency f/sub T/ of 235 GHz was achieved for an HBT, along with a static 1/2 frequency divider operating up to 44 GHz.","PeriodicalId":299287,"journal":{"name":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 19th Annual Technical Digest 1997","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-10-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129784498","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 17
Millimeter-wave HBT MMIC synthesizers using subharmonically injection-locked oscillators 使用次谐波注入锁定振荡器的毫米波HBT MMIC合成器
GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 19th Annual Technical Digest 1997 Pub Date : 1997-10-12 DOI: 10.1109/GAAS.1997.628284
E. Suematsu, M. Yagura, A. Yamada, K. Kishimoto, Yu Zhu, J. Twynam, K. Sakuno, T. Hasegawa, M. Hasegawa, H. Sato
{"title":"Millimeter-wave HBT MMIC synthesizers using subharmonically injection-locked oscillators","authors":"E. Suematsu, M. Yagura, A. Yamada, K. Kishimoto, Yu Zhu, J. Twynam, K. Sakuno, T. Hasegawa, M. Hasegawa, H. Sato","doi":"10.1109/GAAS.1997.628284","DOIUrl":"https://doi.org/10.1109/GAAS.1997.628284","url":null,"abstract":"A subharmonically injection-locked MMIC harmonic VCO for use as a synthesized local oscillator in the 60 GHz band has been experimentally investigated. The designs using HBT MMICs are based on the use of 2nd subharmonic injection locking of the harmonic VCOs to upconvert to millimeter-wave frequency and broaden the locking range. The use of the 4th harmonic signal from the VCOs allows a factor of eight increase in the locking range. The transmission type injection-locked MMIC VCO with the refractive type load circuit increases not only the locking range, but also the high-order harmonic output power in the locked VCO output.","PeriodicalId":299287,"journal":{"name":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 19th Annual Technical Digest 1997","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-10-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125022902","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
A high speed and high precision 64/spl times/33 crosspoint switch IC 高速高精度64/spl次/33交点开关IC
GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 19th Annual Technical Digest 1997 Pub Date : 1997-10-12 DOI: 10.1109/GAAS.1997.628248
R. Savarã
{"title":"A high speed and high precision 64/spl times/33 crosspoint switch IC","authors":"R. Savarã","doi":"10.1109/GAAS.1997.628248","DOIUrl":"https://doi.org/10.1109/GAAS.1997.628248","url":null,"abstract":"A monolithic 2.125GB/s per port 64/spl times/33 crosspoint switch IC has been designed, fabricated, and tested. A 0.6 um enhancement/depletion, recessed gate GaAs process was chosen for this product, which offers high speed devices with low power dissipation. The design used SCFL (Source Coupled FET Logic) standard cells for the switch matrix. All the data path signals use standard differential PECL input and output levels to maintain precision pulse width characteristics. The control signals, are in TTL levels. The high speed data inputs are DC biased allowing AC coupled operation. The switch offers non-blocking programming, and can be configured prior to enabling the outputs for synchronous reprogramming and operation from a single +5V supply.","PeriodicalId":299287,"journal":{"name":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 19th Annual Technical Digest 1997","volume":"78 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-10-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122735914","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Radiation hardened complementary GaAs(CGaAs/sup TM/) 辐射硬化互补砷化镓(CGaAs/sup TM/)
GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 19th Annual Technical Digest 1997 Pub Date : 1997-10-12 DOI: 10.1109/GAAS.1997.628237
M. LaMacchla, J. Abrokwah, B. Bernhardt, B. Crawforth, B. Mathes, T. McGuire, T. Weatherford
{"title":"Radiation hardened complementary GaAs(CGaAs/sup TM/)","authors":"M. LaMacchla, J. Abrokwah, B. Bernhardt, B. Crawforth, B. Mathes, T. McGuire, T. Weatherford","doi":"10.1109/GAAS.1997.628237","DOIUrl":"https://doi.org/10.1109/GAAS.1997.628237","url":null,"abstract":"The addition of a low temperature GaAs (LTG) layer to the self-aligned complementary GaAs (CGaAs/sup TM/) HIGFET structure has reduced the SEU sensitivity while improving the short channel characteristics of the P-channel HIGFETs. Subthreshold leakage currents, gate leakage, and output conductances have been significantly reduced. Designs of 170 K transistor complexity have been demonstrated on CGaAs/sup TM/ wafers with the LTG layer.","PeriodicalId":299287,"journal":{"name":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 19th Annual Technical Digest 1997","volume":"03 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-10-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129275009","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
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