静电放电对gaas基HBTs的影响

GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 19th Annual Technical Digest 1997 Pub Date : 1997-10-12 DOI:10.1109/GAAS.1997.628258

T. Henderson

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引用次数: 9

摘要

介绍了静电放电(ESD)对gaas基HBTs的短期和长期影响。单指和多指设备都在300到8000 V的ESD水平下进行了测试。通常情况下，受ESD影响的器件显示泄漏电流水平增加和/或击穿电压降低。讨论了静电对单指和多指器件的影响，以及镇流器的影响。最后，描述了长期偏置应力对静电放电暴露器件的影响。

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Effects of electrostatic discharge on GaAs-based HBTs

Short term and long term effects of electrostatic discharge (ESD) on GaAs-based HBTs are described. Both single-finger and multi-finger devices were tested, at ESD levels from 300 to 8000 V. Typically, devices subject to ESD show increasing levels of leakage current and/or decreased breakdown voltages. ESD effects on single and multi-finger devices are discussed, as well as the effects of ballasting. Finally, the results of long-term bias stress on ESD exposed devices is described.

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GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 19th Annual Technical Digest 1997

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