共振隧道电路技术:到来了吗?

GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 19th Annual Technical Digest 1997 Pub Date : 1997-10-12 DOI:10.1109/GAAS.1997.628251

A. Seabaugh, B. Brar, T. Broekaert, G. Frazier, F. Morris, E. Beam

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引用次数: 26

摘要

一种三维大规模集成(LSI)工艺，用于在InP上制造谐振隧道二极管和异质结场效应晶体管，结合了当今最快的两种半导体器件。该技术的演示现在包括多千兆赫数字和混合信号电路以及超低功耗SRAM电路;25到100 GHz的电路显然在这项技术的范围内。

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Resonant tunneling circuit technology: has it arrived?

A three-dimensional large-scale integration (LSI) process for fabrication of resonant tunneling diodes and heterojunction field-effect transistors on InP has been demonstrated, combining two of today's fastest semiconductor devices. Demonstrations of this technology now include multigigahertz digital and mixed-signal circuits and ultralow power SRAM circuits; 25 to 100 GHz circuits are clearly in range for this technology.

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GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 19th Annual Technical Digest 1997

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