带低失真增益可变衰减器的单低压供电GaAs功率MESFET放大器，用于1.9 ghz个人手持电话系统

GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 19th Annual Technical Digest 1997 Pub Date : 1997-10-12 DOI:10.1109/GAAS.1997.628235

M. Nagaoka, H. Wakimoto, T. Seshita, K. Kawakyu, Y. Kitaura, A. Kameyama, N. Uchitomi

{"title":"带低失真增益可变衰减器的单低压供电GaAs功率MESFET放大器，用于1.9 ghz个人手持电话系统","authors":"M. Nagaoka, H. Wakimoto, T. Seshita, K. Kawakyu, Y. Kitaura, A. Kameyama, N. Uchitomi","doi":"10.1109/GAAS.1997.628235","DOIUrl":null,"url":null,"abstract":"A GaAs power amplifier with a low-distortion, 10-dB gain attenuator has been developed for 1.9-GHz personal handy phone system (PHS). Single low 2.4-V supply operation was achieved by using power MESFETs with p-pocket layers. Furthermore, on account of an attenuator with cascaded shunt FET structure, very low 600-kHz adjacent channel leakage power (ACP) with sufficient, constant output power was attained regardless of any controlled gain. An output power of 21.1 dBm, a low dissipated current of 157 mA and a high power-added efficiency of 37.2% were obtained with ACP of -55 dBc.","PeriodicalId":299287,"journal":{"name":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 19th Annual Technical Digest 1997","volume":"53 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1997-10-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Single low voltage supply operation GaAs power MESFET amplifier with low-distortion gain-variable attenuator for 1.9-GHz personal handy phone systems\",\"authors\":\"M. Nagaoka, H. Wakimoto, T. Seshita, K. Kawakyu, Y. Kitaura, A. Kameyama, N. Uchitomi\",\"doi\":\"10.1109/GAAS.1997.628235\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A GaAs power amplifier with a low-distortion, 10-dB gain attenuator has been developed for 1.9-GHz personal handy phone system (PHS). Single low 2.4-V supply operation was achieved by using power MESFETs with p-pocket layers. Furthermore, on account of an attenuator with cascaded shunt FET structure, very low 600-kHz adjacent channel leakage power (ACP) with sufficient, constant output power was attained regardless of any controlled gain. An output power of 21.1 dBm, a low dissipated current of 157 mA and a high power-added efficiency of 37.2% were obtained with ACP of -55 dBc.\",\"PeriodicalId\":299287,\"journal\":{\"name\":\"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 19th Annual Technical Digest 1997\",\"volume\":\"53 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1997-10-12\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 19th Annual Technical Digest 1997\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/GAAS.1997.628235\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 19th Annual Technical Digest 1997","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GAAS.1997.628235","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 3

摘要

研制了一种用于1.9 ghz个人手持电话系统(PHS)的低失真10db增益衰减器GaAs功率放大器。采用带p口袋层的功率mesfet实现了单次低2.4 v电源工作。此外，由于具有级联分流场效应管结构的衰减器，无论控制增益如何，都可以获得具有足够恒定输出功率的非常低的600-kHz相邻通道泄漏功率(ACP)。ACP为-55 dBc时，输出功率为21.1 dBm，损耗电流为157 mA，功率附加效率为37.2%。

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Single low voltage supply operation GaAs power MESFET amplifier with low-distortion gain-variable attenuator for 1.9-GHz personal handy phone systems

A GaAs power amplifier with a low-distortion, 10-dB gain attenuator has been developed for 1.9-GHz personal handy phone system (PHS). Single low 2.4-V supply operation was achieved by using power MESFETs with p-pocket layers. Furthermore, on account of an attenuator with cascaded shunt FET structure, very low 600-kHz adjacent channel leakage power (ACP) with sufficient, constant output power was attained regardless of any controlled gain. An output power of 21.1 dBm, a low dissipated current of 157 mA and a high power-added efficiency of 37.2% were obtained with ACP of -55 dBc.

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GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 19th Annual Technical Digest 1997

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