Z. Lao, A. Thiede, U. Nowotny, M. Schlechtweg, V. Hurm, W. Bronner, J. Hornung, M. Rieger-Motzer, G. Kaufel, K. Kohler, A. Hulsmann
{"title":"High power modulator driver ICs up to 30 Gb/s with AlGaAs/GaAs HEMTs","authors":"Z. Lao, A. Thiede, U. Nowotny, M. Schlechtweg, V. Hurm, W. Bronner, J. Hornung, M. Rieger-Motzer, G. Kaufel, K. Kohler, A. Hulsmann","doi":"10.1109/GAAS.1997.628274","DOIUrl":null,"url":null,"abstract":"Two monolithic integrated transmitter circuits of a modulator driver and a modulator driver with a 2:1 multiplexer for high-speed optical-fiber links are presented. The ICs featuring differential configuration were fabricated in a 0.2 /spl mu/m gate-length enhancement and depletion HEMT technology with 60 GHz and 55 GHz f/sub T/. The modulator driver operates up to 25 Gb/s with an output voltage swing of 3.3 V/sub p-p/ at each output (corresponding to an internal current swing of 100 mA). The total voltage gain is 22 dB. The modulator driver with a integrated 2:1 multiplexer performs a data rate up to 30 Gb/s with an output voltage swing of 2.2 V/sub p-p/ at each output. Each circuit consumes 1.4 W power using a single supply voltage of -5 V.","PeriodicalId":299287,"journal":{"name":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 19th Annual Technical Digest 1997","volume":"36 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1997-10-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"9","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 19th Annual Technical Digest 1997","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GAAS.1997.628274","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 9
Abstract
Two monolithic integrated transmitter circuits of a modulator driver and a modulator driver with a 2:1 multiplexer for high-speed optical-fiber links are presented. The ICs featuring differential configuration were fabricated in a 0.2 /spl mu/m gate-length enhancement and depletion HEMT technology with 60 GHz and 55 GHz f/sub T/. The modulator driver operates up to 25 Gb/s with an output voltage swing of 3.3 V/sub p-p/ at each output (corresponding to an internal current swing of 100 mA). The total voltage gain is 22 dB. The modulator driver with a integrated 2:1 multiplexer performs a data rate up to 30 Gb/s with an output voltage swing of 2.2 V/sub p-p/ at each output. Each circuit consumes 1.4 W power using a single supply voltage of -5 V.