High power modulator driver ICs up to 30 Gb/s with AlGaAs/GaAs HEMTs

Z. Lao, A. Thiede, U. Nowotny, M. Schlechtweg, V. Hurm, W. Bronner, J. Hornung, M. Rieger-Motzer, G. Kaufel, K. Kohler, A. Hulsmann
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引用次数: 9

Abstract

Two monolithic integrated transmitter circuits of a modulator driver and a modulator driver with a 2:1 multiplexer for high-speed optical-fiber links are presented. The ICs featuring differential configuration were fabricated in a 0.2 /spl mu/m gate-length enhancement and depletion HEMT technology with 60 GHz and 55 GHz f/sub T/. The modulator driver operates up to 25 Gb/s with an output voltage swing of 3.3 V/sub p-p/ at each output (corresponding to an internal current swing of 100 mA). The total voltage gain is 22 dB. The modulator driver with a integrated 2:1 multiplexer performs a data rate up to 30 Gb/s with an output voltage swing of 2.2 V/sub p-p/ at each output. Each circuit consumes 1.4 W power using a single supply voltage of -5 V.
高功率调制器驱动ic高达30 Gb/s与AlGaAs/GaAs hemt
提出了两种用于高速光纤链路的调制器驱动和带2:1多路复用器的调制器驱动的单片集成发射电路。采用0.2 /spl mu/m栅极长度增强和耗尽HEMT技术,在60 GHz和55 GHz f/sub / T下制备了具有差分结构的ic。调制器驱动器的工作速度高达25gb /s,每个输出的输出电压摆幅为3.3 V/sub p-p/(对应于100 mA的内部电流摆幅)。总电压增益为22 dB。具有集成2:1多路复用器的调制器驱动器执行高达30 Gb/s的数据速率,每个输出的输出电压摆幅为2.2 V/sub p-p/。单路供电电压为- 5v时,每路功耗为1.4 W。
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