A high efficiency normally-off MODFET power MMIC for PHS operating under 3.0 V single-supply condition

GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 19th Annual Technical Digest 1997 Pub Date : 1997-10-12 DOI:10.1109/GAAS.1997.628232

T. Yokoyama, M. Nishijima, S. Yamamoto, M. Nishitsuji, K. Nishii, M. Nakayama, O. Ishikawa

引用次数: 9

Abstract

A normally-off MODFET power MMIC has been developed for 1.9 GHz Japanese Personal Handy-phone System (PHS). High power added efficiency (PAE) of 41.7% at the output power (P/sub out/) of 22.0 dBm has been achieved under 3.0 V single-supply condition. The operating current is only 127 mA and the adjacent channel leakage power (P/sub adj/) is -58.2 dBc. Three FETs with their matching circuits are integrated on a very small die (1.1 mm/sup 2/) of the MMIC.

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用于小灵通在3.0 V单电源条件下工作的高效率常关MODFET功率MMIC

为1.9 GHz日本个人手持电话系统(PHS)开发了一种常关MODFET功率MMIC。在3.0 V单电源条件下，输出功率(P/sub - out/)为22.0 dBm时，功率附加效率(PAE)高达41.7%。工作电流仅为127ma，相邻通道漏功率(P/sub / adj/)为-58.2 dBc。三个fet及其匹配电路集成在一个非常小的MMIC芯片(1.1 mm/sup 2/)上。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 19th Annual Technical Digest 1997

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