Proceedings of the 2001 8th International Symposium on the Physical and Failure Analysis of Integrated Circuits. IPFA 2001 (Cat. No.01TH8548)最新文献_第2页

Influence of impact ionization stresses on AlGaAs-InGaAs HEMT performances 冲击电离应力对AlGaAs-InGaAs HEMT性能的影响

Proceedings of the 2001 8th International Symposium on the Physical and Failure Analysis of Integrated Circuits. IPFA 2001 (Cat. No.01TH8548) Pub Date : 2001-07-09 DOI: 10.1109/IPFA.2001.941494

B. Lambert, N. Malbert, Labat, A. Touboul, P. Huguet

{"title":"Influence of impact ionization stresses on AlGaAs-InGaAs HEMT performances","authors":"B. Lambert, N. Malbert, Labat, A. Touboul, P. Huguet","doi":"10.1109/IPFA.2001.941494","DOIUrl":"https://doi.org/10.1109/IPFA.2001.941494","url":null,"abstract":"Pseudomorphic HEMTs are widely used in medium power applications. Users are concerned by the reliability of PHEMT-based technologies submitted to RF overdrive. In particular, III-V FETs may suffer from impact ionization effect and surface related mechanisms. The small-signal response of interface states at passivated III-V semiconductor surfaces has been measured over a wide frequency range from 1 Hz to microwave frequencies (Iizuka et al, 1997). During RF operation, impact ionization mechanisms often occur in the channel and their influence on the reliability of devices is not well known. In this work, the effect of life-tests performed on PHEMTs biased in the impact ionization regime with or without thermal stress has been analyzed by monitoring the evolution of DC electrical characteristics and their temperature dependence. The reverse gate current is measured as a function of temperature to observe the behavior of surface traps located at the drain edge of the gate in access regions. Correlation between drain current transients, temperature dependence of the reverse gate current and the on-state breakdown loci is discussed to evaluate both the influence of surface traps on electrical parameters and their evolution after aging.","PeriodicalId":297053,"journal":{"name":"Proceedings of the 2001 8th International Symposium on the Physical and Failure Analysis of Integrated Circuits. IPFA 2001 (Cat. No.01TH8548)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-07-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128816571","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Plasma process-induced latent damage on gate oxide-demonstrated by single-layer and multi-layer antenna structures 等离子体过程对栅极氧化物的潜在损伤——由单层和多层天线结构证明

Proceedings of the 2001 8th International Symposium on the Physical and Failure Analysis of Integrated Circuits. IPFA 2001 (Cat. No.01TH8548) Pub Date : 2001-07-09 DOI: 10.1109/IPFA.2001.941490

Zhichun Wang, J. Ackaert, C. Salm, F. Kuper

引用次数: 0

Plasma damage in floating metal-insulator-metal capacitors 浮式金属-绝缘体-金属电容器的等离子体损伤

Proceedings of the 2001 8th International Symposium on the Physical and Failure Analysis of Integrated Circuits. IPFA 2001 (Cat. No.01TH8548) Pub Date : 2001-07-09 DOI: 10.1109/IPFA.2001.941491

J. Ackaert, Zhichun Wang, E. De Backer, P. Coppens

引用次数: 6

Solder joint fatigue and reliability of chip scale packages: a failure analysis strategy 芯片规模封装的焊点疲劳与可靠性:失效分析策略

Proceedings of the 2001 8th International Symposium on the Physical and Failure Analysis of Integrated Circuits. IPFA 2001 (Cat. No.01TH8548) Pub Date : 2001-07-09 DOI: 10.1109/IPFA.2001.941473

S. Mohamed, C. Francis, L. B. Yew, Tang Wye Mun, L. Ki

引用次数: 0

Poly-residue-induced contact failures in 0.18 /spl mu/m technology 在0.18 /spl mu/m技术中，聚残渣引起的接触失效

Proceedings of the 2001 8th International Symposium on the Physical and Failure Analysis of Integrated Circuits. IPFA 2001 (Cat. No.01TH8548) Pub Date : 2001-07-09 DOI: 10.1109/IPFA.2001.941467

C. Teh, Z. Song, J. Y. Dai, Z.R. Guo, S. Redkar

引用次数: 3

Suppression of metal contamination by gettering 用捕集剂抑制金属污染

Proceedings of the 2001 8th International Symposium on the Physical and Failure Analysis of Integrated Circuits. IPFA 2001 (Cat. No.01TH8548) Pub Date : 2001-07-09 DOI: 10.1109/IPFA.2001.941489

J.W.Y. Teo, H. Lim, Y. Jin, J.H. Huang, W.C. Chew, C.K. Leong, F. Gn, M.F. Li, G. Su

引用次数: 0

Current leakage fault localization using backside OBIRCH 基于后置birch的电流泄漏故障定位

Proceedings of the 2001 8th International Symposium on the Physical and Failure Analysis of Integrated Circuits. IPFA 2001 (Cat. No.01TH8548) Pub Date : 2001-07-09 DOI: 10.1109/IPFA.2001.941468

F. Beaudoin, G. Imbert, P. Perdu, C. Trocque

{"title":"Current leakage fault localization using backside OBIRCH","authors":"F. Beaudoin, G. Imbert, P. Perdu, C. Trocque","doi":"10.1109/IPFA.2001.941468","DOIUrl":"https://doi.org/10.1109/IPFA.2001.941468","url":null,"abstract":"Localization of current leakage faults in modern ICs is a major challenge in failure analysis. To deal with this issue, several techniques such as liquid crystal thermography and emission microscopy can be used. However, traditional front-side failure analysis techniques are unable to localize faults obscured by several metal layers. This trend, as well as the appearance of new packaging technologies, has driven alternative approaches from the backside of the die. Of the infrared light optical techniques, the optical beam induced resistance change (OBIRCH) technique has shown to be very promising for locating current leakage type faults (Barton et al, 1999; Nikawa et al, 1999). In this paper, a backside failure analysis case study on four-level interconnection BICMOS ICs is presented. Different front side defect localization approaches such as liquid crystal were tried, but none worked since interconnection layers obscured the fault. Backside emission microscopy also failed due to the resistive nature of the defect. Only the OBIRCH technique could quickly and precisely localize the defect causing current leakage from the backside of the die.","PeriodicalId":297053,"journal":{"name":"Proceedings of the 2001 8th International Symposium on the Physical and Failure Analysis of Integrated Circuits. IPFA 2001 (Cat. No.01TH8548)","volume":"3 3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-07-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121256987","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 15

The reactive ion etcher as a physical and failure analysis tool for FC-PGA packages 反应离子蚀刻仪作为FC-PGA封装的物理和失效分析工具

Proceedings of the 2001 8th International Symposium on the Physical and Failure Analysis of Integrated Circuits. IPFA 2001 (Cat. No.01TH8548) Pub Date : 2001-07-09 DOI: 10.1109/IPFA.2001.941475

Ng Sea Chooi

引用次数: 0

Effects of electron-beam lithography on thin gate oxide reliability 电子束光刻对薄栅氧化物可靠性的影响

Proceedings of the 2001 8th International Symposium on the Physical and Failure Analysis of Integrated Circuits. IPFA 2001 (Cat. No.01TH8548) Pub Date : 2001-07-09 DOI: 10.1109/IPFA.2001.941454

Pei Fen Chong, B. Cho, E. Chor, M. Joo

引用次数: 0

Imprint model based on thermionic field emission mechanism considering energy distribution of trap levels 考虑阱能级能量分布的基于热离子场发射机制的压印模型

Proceedings of the 2001 8th International Symposium on the Physical and Failure Analysis of Integrated Circuits. IPFA 2001 (Cat. No.01TH8548) Pub Date : 2001-07-09 DOI: 10.1109/IPFA.2001.941493

M. Tajiri, H. Nozawa

{"title":"Imprint model based on thermionic field emission mechanism considering energy distribution of trap levels","authors":"M. Tajiri, H. Nozawa","doi":"10.1109/IPFA.2001.941493","DOIUrl":"https://doi.org/10.1109/IPFA.2001.941493","url":null,"abstract":"In recent years, nonvolatile memories with use of new materials have attracted considerable attention. In particular, ferroelectric RAMs (FeRAMs) (Scott and Araujo, 1989) were realized recently and are expected to take the place of DRAMs and other ROMs. The ferroelectric material used for FeRAMs has perovskite crystal structure with bistable states, each of which corresponds to logic states, \"0\" and \"1\". However, to use FeRAMs as main memories of computers, we have to overcome a few reliability issues: (a) retention, a decrease in polarization charge after long-term storage (Gruveman and Tanaka, 2000; Nakao et al, 1998), and relaxation, the decrease in polarization charge immediately after applying voltage; (b) imprint, the shift in specific polarized direction in the hysteresis curve (Hase et al, 1998; Nagasawa and Nozawa, 1999; Al-Sharif et al, 1996; Lee and Ramesh, 1995); (c) fatigue, the decrease in polarizability by repeat writing (Mihara et al, 1994; Lee et al, 2000). SBT thin films are currently investigated because of their high fatigue endurance. However, there are other issues, such as imprint. In this paper, we investigated the characteristics of imprint in SrBi/sub 2/Ta/sub 2/O/sub 9/ (SBT) and Pb(Zr,Ti)O/sub 3/ (PZT) thin films.","PeriodicalId":297053,"journal":{"name":"Proceedings of the 2001 8th International Symposium on the Physical and Failure Analysis of Integrated Circuits. IPFA 2001 (Cat. No.01TH8548)","volume":"90 12","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-07-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131894765","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1