用捕集剂抑制金属污染

Proceedings of the 2001 8th International Symposium on the Physical and Failure Analysis of Integrated Circuits. IPFA 2001 (Cat. No.01TH8548) Pub Date : 2001-07-09 DOI:10.1109/IPFA.2001.941489

J.W.Y. Teo, H. Lim, Y. Jin, J.H. Huang, W.C. Chew, C.K. Leong, F. Gn, M.F. Li, G. Su

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引用次数: 0

摘要

与起始材料相关的缺陷和生产线工艺通常被归咎于栅氧化物的高可靠性故障率。首先观察到抛光晶圆与外延晶圆相比具有更高的栅极氧化物可靠性故障率，导致初步假设这种故障率差异归因于起始材料问题。进一步的研究表明，硅表面缺陷并不是导致高栅氧化可靠性失效的原因。相反，结果指出金属污染是高可靠性故障的罪魁祸首。然而，由于外延片加工造成的金属污染被硅衬底内氧沉淀的吸污作用所抑制。

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Suppression of metal contamination by gettering

Starting-material-related defects and line processes are often blamed for high reliability failure rates of gate oxides. Polished wafers are first observed to have higher gate oxide reliability failure rates compared to epitaxial wafers, leading to the initial presumption that this difference in failure rate is attributed to starting material issues. Further investigations revealed that it is not silicon surface imperfections that are the cause of the high gate oxide reliability failures. Instead, results pinpoint metal contamination as the culprit for high reliability failures. However, metal contamination due to processing of epitaxial wafers is suppressed by the gettering effect of oxygen precipitates inside the silicon substrate.

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Proceedings of the 2001 8th International Symposium on the Physical and Failure Analysis of Integrated Circuits. IPFA 2001 (Cat. No.01TH8548)

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